IP Library Assignment 027568/0826
Patent Assignment
Reel/Frame 027568/0826

Assignment of Assignor's Interest

Recorded: 2012-01-20 Pages: 4
Assignors
YAO, FU-WEI
Executed: 2012-01-12
HSU, CHUN-WEI
Executed: 2012-01-12
YU, CHEN-JU
Executed: 2012-01-12
YU, JIUN-LEI JERRY
Executed: 2012-01-12
YANG, FU-CHIH
Executed: 2012-01-12
HSIUNG, CHIH-WEN
Executed: 2012-01-12
WONG, KING-YUEN
Executed: 2012-01-12
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
NO. 8, LI-HSIN RD. VI, HSINCHU SCIENCE PARK, HSINCHU, 300, TAIWAN
Covered Property (1)
High Electron Mobility Transistor Structure with Improved Breakdown Voltage Performance
Patent: 8,680,535 →
Application: 13/354,768 →
Publication: US 2013/0161638