IP Library Assignment 027768/0955
Patent Assignment
Reel/Frame 027768/0955

Assignment of Assignor's Interest

Recorded: 2012-02-27 Pages: 6
Assignors
TACHIBANA, KOICHI
Executed: 2012-02-14
YOSHIDA, HISASHI
Executed: 2012-02-14
ONO, HIROSHI
Executed: 2012-02-14
NAGO, HAJIME
Executed: 2012-02-14
HARADA, YOSHIYUKI
Executed: 2012-02-14
HIKOSAKA, TOSHIKI
Executed: 2012-02-14
SUGAI, MAKI
Executed: 2012-02-14
OKA, TOSHIYUKI
Executed: 2012-02-16
NUNOUE, SHINYA
Executed: 2012-02-14
Assignee
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property (1)
Nitride Semiconductor Device and Nitride Semiconductor Layer Growth Substrate
Patent: 8,564,006 →
Application: 13/405,985 →
Publication: US 2012/0299015
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: ALPAD CORPORATION
Reel/Frame 044591/0755 →