Patent Assignment
Reel/Frame 044591/0755
Assignment of Assignor's Interest
Recorded: 2017-12-01
Pages: 13
Assignor
KABUSHIKI KAISHA TOSHIBA
Executed: 2017-03-16
Assignee
ALPAD CORPORATION
11-1, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, 100-6208, JAPAN
Covered Properties
(135)
Semiconductor Light Emitting Element, and Its Manufacturing Method
Patent:
6,303,405 →
Application:
09/404,727 →
Semiconductor Light Emitting Device
Lighting Device, Image Pickup Apparatus and Portable Terminal Unit
Semiconductor Device and Method for Manufacturing the Same
Compound Semiconductor Device and Method of Manufacturing the Same
Gallium Nitride Based Semiconductor Device and Method of Manufacturing Same
Surface Mountable Chip
Semiconductor Light-Emitting Element and Manufacturing Method Thereof
Luminescent Material
Light Emitting Device
Luminescent Material
Semiconductor Light Emitting Element, Method for Manufacturing the Same, and Light Emitting Device
Optical Semiconductor Device
Surface Mountable Chip
Light Emitting Device
Method and Apparatus for Providing a Patterned Electrically Conductive and Optically Transparent or Semi-Transparent Layer Over a Lighting Semiconductor Device
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Method and Apparatus for Manufacturing Led Devices Using Laser Scribing
Method for Manufacturing Semiconductor Light Emitting Device
High Brightness Led Utilizing a Roughened Active Layer and Conformal Cladding
Light Emitting Device and Light Emitting Apparatus
Semiconductor Light Emitting Device and Semiconductor Light Emitting Apparatus
Semiconductor Light Emitting Apparatus Having Stacked Reflective Dielectric Films
Surface Mountable Chip
Semiconductor Light-Emitting Device
Luminous Material Using Fluorescence Amorphous Solid
Semiconductor Light Emitting Device and Method for Manufacturing Same
Light Emitting Device and a Method for Manufacturing the Same
Light Sources with Serially Connected Led Segments Including Current Blocking Diodes
Semiconductor Light-Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Luminescent Material
Semiconductor Light-Emitting Device
Semiconductor Light-Emitting Device
Semiconductor Light Emitting Device and Method of Fabricating Semiconductor Light Emitting Device
Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method of Fabricating Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method of Fabricating Semiconductor Light Emitting Device
Light Emitting Device
Crystal Growth Method and Semiconductor Light Emitting Device
Led Package
Semiconductor Light Emitting Element and Method for Manufacturing Same
Method and Apparatus for Manufacturing Led Devices Using Laser Scribing
Semiconductor Light Emitting Element, Method for Manufacturing the Same, and Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Light Emitting Device
Light Emitting Device
Light Emitting Device Including First and Second Red Phosphors and a Green Phosphor
Light Emitting Device
Semiconductor Light Emitting Device
Method for Manufacturing Nitride Semiconductor Crystal Layer
Method of Fabricating Semiconductor Light Emitting Device and Semiconductor Light Emitting Device
Led Module
Stacked Layers of Nitride Semiconductor and Method for Manufacturing the Same
Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Semiconductor Light Emitting Device
Nitride Led with a Schottky Electrode Penetrating a Transparent Electrode
Distributed Current Blocking Structures for Light Emitting Diodes
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Light Emitting Device
Light Emitting Device
Light Emitting Device
Light Emitting Device
Wafer, Crystal Growth Method, and Semiconductor Device
Semiconductor Light Emitting Device with Light Transmittable Electrode and Method for Manufacturing Same
Fluorescent Substance and Light-Emitting Device Employing the Same
Semiconductor Light Emitting Device, Nitride Semiconductor Wafer, and Method for Manufacturing Nitride Semiconductor Layer
Semiconductor Light Emitting Device, Wafer, and Method for Manufacturing Nitride Semiconductor Crystal Layer
Nitride Semiconductor Device, Nitride Semiconductor Wafer, and Method for Manufacturing Nitride Semiconductor Layer
Method for Manufacturing Nitride Semiconductor Device
Semiconductor Light Emitting Device
GaN LEDs with Improved Area and Method for Making the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Semiconductor Wafer
Semiconductor Light Emitting Device
Nitride Semiconductor Device and Nitride Semiconductor Layer Growth Substrate
Semiconductor Light Emitting Device
Semiconductor Device, Wafer, Method for Manufacturing Semiconductor Device, and Method for Manufacturing Wafer
Light-Transmitting Metal Electrode, Electronic Apparatus and Light Emitting Device
Semiconductor Device
Semiconductor Light Emitting Device
Luminescent Material
Luminescent Material
Semiconductor Light Emitting Device
Phosphors and Method for Producing Thereof
Semiconductor Light Emitting Element and Method for Manufacturing Same
Method for Manufacturing Semiconductor Light Emitting Device
Light Emitting Device
Semiconductor Light Emitting Apparatus Having Stacked Reflective Dielectric Films
Semiconductor Light Emitting Device and Method of Fabricating Semiconductor Light Emitting Device
Semiconductor Light Emitting Device Including Oxide Layers with Different Oxygen Contents
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Light Emitting Device
Method for Manufacturing Nitride Semiconductor Crystal Layer
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Light Source Unit
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Luminescent Material
Fluorescent Substance, Light-Emitting Device and Method for Producing Fluorescent Substance
Semiconductor Wafer for Semiconductor Device Having a Multilayer
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Semiconductor Light Emitting Apparatus
Stacked Layers of Nitride Semiconductor and Method for Manufacturing the Same
Distributed Current Blocking Structures for Light Emitting Diodes
GaN LEDs WITH IMPROVED AREA AND METHOD FOR MAKING THE SAME
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Crystal Growth Method and Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method of Fabricating Semiconductor Light Emitting Device
Semiconductor Light Emitting Device, Nitride Semiconductor Wafer, and Method for Manufacturing Nitride Semiconductor Layer
Semiconductor Light Emitting Device
Composite Resin and Electronic Device
Method for Manufacturing Semiconductor Light Emitting Apparatus by Mounting Semiconductor Light Emitting Device Having Stacked Dielectric Films Having Different Refractive Indexes on Mounting Member
Light-Emitting Unit and Semiconductor Light-Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Related Assignments
(6)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement
Nov 12, 2012
From: BRIDGELUX, INC.
To: WHITE OAK GLOBAL ADVISORS, LLC, AS COLLATERAL AGENT
Reel/Frame 029281/0844 →
Assignment of Assignor's Interest
Jul 1, 2013
From: BRIDGELUX, INC.
To: TOSHIBA TECHNO CENTER INC.
Reel/Frame 030724/0395 →
Assignment of Assignor's Interest
Jun 30, 2014
From: SHUM, FRANK T
To: BRIDGELUX INC.
Reel/Frame 033209/0116 →
Assignment of Assignor's Interest
Aug 1, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033443/0908 →
Assignment of Assignor's Interest
Aug 28, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033634/0410 →
Merger
Mar 17, 2026
From: ALPAD CORPORATION
To: NICHIA CORPORATION
Reel/Frame 074093/0155 →