IP Library Granted Patent US 7,875,206
Granted Patent B2
US 7,875,206 · App. 11/774,077 · Granted Jan 25, 2011

Luminescent material

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Quick Facts
Patent No.
US 7,875,206
App. No.
11/774,077
Granted
Jan 25, 2011
Kind
B2
Abstract

A luminescent material is provided, which includes a compound having a composition represented by the following general formula (A): (Sr a1 ,Ba b1 ,Ca c1 ,Re v1 ,Eu w1 ) 2 SiO 4   (A) wherein, Re is at least one selected from a group consisting of Pr and Dy, and a1, b1, c1, v1 and w1 satisfy following relationships: a 1+ b 1+ c 1+ v 1+ w 1=1  (1), 0≦ a 1/(1− v 1− w 1)≦1  (2), 0≦ b 1/(1− v 1− w 1)≦1  (3), 0≦ c 1/(1− v 1− w 1)≦1  (4), 0<v1≦0.15  (5), 0<w1≦0.02  (6).

Claims (59)

1. A method for manufacturing the luminescent material comprising a light-emitting element emitting light, the light having a main light emission peak in a wavelength ranging from 310 to 420 nm; and

a luminescent layer comprising a luminescent material configured to be irradiated with the light, at least part of the luminescent material being a compound having a composition represented by a following general formula (A):

(Sr a1 ,Ba b1 ,Ca c1 ,Re v1 ,Eu w1 ) 2 SiO 4   (A),

wherein, Re is at least one selected from a group consisting of Pr and Dy; and a1, b1, c1, v1 and w1 satisfy following relationships:

a 1+ b 1+ c 1+ v 1+ w 1=1  (1);

0≦ a 1/(1− v 1− w 1)≦1  (2);

0≦ b 1/(1− v 1− w 1)≦1  (3);

0≦ c 1/(1− v 1− w 1)≦1  (4);

0<v1≦0.15  (5);

0<w1≦0.02  (6)

v 1/ w 1>1  (7), the method comprising:

heating a raw material in a reducing atmosphere constituted by N 2 /H 2 or Ar/H 2 at a temperature of 1100 to 1500° C. for 3 to 7 hours to obtain a primary sintered product;

pulverizing the primary sintered product to obtain a pulverized primary sintered product;

housing the pulverized primary sintered product into a container;

arranging the container housing the pulverized primary sintered product to a furnace;

substituting an atmosphere in the furnace with an inert gas; and

heating the pulverized primary sintered product in a reducing atmosphere constituted by N 2 /H 2 or Ar/H 2 containing hydrogen at a concentration of 5% or more and less than 100% at a temperature of 1100 to 1500° C. for 2 to 6 hours to obtain a secondary sintered product.

2. A method for manufacturing a luminescent material comprising a compound having a composition represented by the following general formula (B):

(Sr a2 ,Ba b2 ,Ca b2 ,Re v2 ,Eu w2 ,M v2 ) 2 SiO 4   (B),

wherein, Re is at least one selected from a group consisting of Pr and Dy; M is at least one selected from a group consisting of Li, Na, K, Rb and Cs; and a2, b2, c2, v2 and w2 satisfy following relationships:

a 2+ b 2+ c 2+2 v 2 +w 2=1  (7);

0≦ a 2/(1−2 v 2 −w 2)≦1  (8);

0≦ b 2/(1−2 v 2 −w 2)≦1  (9);

0 ≦c 2/(1−2 v 2 −w 2)≦1  (10);

0<v2≦0.15  (11);

0<w2≦0.02  (12)

v 2 /w 2>1  (13), the method comprising:

heating a raw material in a reducing atmosphere constituted by N 2 /H 2 or Ar/H 2 at a temperature of 1100 to 1500° C. for 3 to 7 hours to obtain a primary sintered product;

pulverizing the primary sintered product to obtain a pulverized primary sintered product;

housing the pulverized primary sintered product into a container;

arranging the container housing the pulverized primary sintered product to a furnace;

substituting an atmosphere in the furnace with an inert gas; and

heating the pulverized primary sintered product in a reducing atmosphere constituted by N 2 /H 2 or Ar/H 2 containing hydrogen at a concentration of 5% or more and less than 100% at a temperature of 1100 to 1500° C. for 2 to 6 hours to obtain a secondary sintered product.

3. A light-emitting device, comprising:

a light-emitting element emitting light, the light having a main light emission peak in a wavelength ranging from 310 to 420 nm; and

a luminescent layer comprising a luminescent material configured to be irradiated with the light, at least part of the luminescent material being a compound having a composition represented by a following general formula (A):

(Sr a1 ,Ba b1 ,Ca c1 ,Re v1 ,Eu w1 ) 2 SiO 4   (A),

wherein, Re is at least one selected from a group consisting of Pr and Dy; and a1, b1, c1, v1 and w1 satisfy following relationships:

a 1+ b 1+ c 1+ v 1+ w 1=1  (1);

0≦ a 1/(1− v 1− w 1)≦1  (2);

0≦ b 1/(1− v 1− w 1)≦1  (3)

0≦ c 1/(1− v 1− w 1)≦1  (4)

0<v1≦0.15  (5);

0<w1≦0.02  (6)

v 1 /w 1>1  (7),

wherein the luminescent layer comprises another luminescent material having a main light emission peak in a wavelength ranging from 430 to 510 nm.

4. A light-emitting device comprising:

a light-emitting element emitting light, the light having a main light emission peak in a wavelength ranging from 310 to 420 nm; and

a luminescent layer comprising a luminescent material configured to be irradiated with the light, at least part of the luminescent material being a compound having a composition represented by the following general formula (B):

(sr a2 ,Ba b2 ,Ca c2 ,Re v2 ,Eu w2 ,M v2 ) 2 SiO 4   (B),

wherein, Re is at least one selected from a group consisting of Pr and Dy; M is at least one selected from a group consisting of Li, Na, K, Rb and Cs; and a2, b2, c2, v2 and w2 satisfy following relationships:

a 2+ b 2+ c 2+2 v 2 +w 2=1  (7);

0≦ a 2/(1−2 v 2 −w 2)≦1  (8);

0≦ b 2/(1−2 v 2 −w 2)≦1  (9);

0 ≦c 2/(1−2 v 2 −w 2)≦1  (10);

0<v2≦0.15  (11);

0<w2≦0.02  (12)

v 2 /w 2>1  (13),

wherein the luminescent layer comprises another luminescent material having a main light emission peak in a wavelength ranging from 430 to 510 nm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: ALPAD CORPORATION
Reel/Frame 044591/0755 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2007
From: HIRAMATSU, RYOSUKE
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 019530/0976 →