Stacked layers of nitride semiconductor and method for manufacturing the same
View Patent ↗According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.
1. Stacked layers of a nitride semiconductor, comprising:
a substrate not including a nitride semiconductor and having plurality of protrusions on a major surface;
a single crystal layer provided directly on the major surface of the substrate to cover the protrusions, and including a crack therein; and
a nitride semiconductor layer provided on the single crystal layer,
the plurality of the protrusions being formed in a planar pattern,
the protrusions extending in a prescribed crystal orientation of the substrate, and extending in a plurality of directions equivalent to the prescribed crystal orientation.
2. The stacked layers of claim 1 , wherein
the crack exists on a boundary between a top surface of the protrusion and a tilted side surface of the protrusion, or a boundary between the major surface of the substrate and the tilted side surface of the protrusion.
3. The stacked layers of claim 1 , wherein
the crack exists on at least one of a top portion of a side surface of the protrusion and lower portion of the side surface of the protrusion.
4. The stacked layers of claim 1 , wherein
the protrusion is provided in a plurality,
the plurality of the protrusions are formed in a stripe pattern, and
the crack extend along the one of the protrusions.
5. The stacked layers of claim 1 , wherein the substrate is a sapphire substrate or a silicon substrate.
6. Stacked layers of a nitride semiconductor, comprising:
a substrate not including a nitride semiconductor and having a plurality of protrusions on a major surface;
a single crystal layer provided directly on the major surface of the substrate to cover the protrusions, and including a crack therein; and
a nitride semiconductor layer provided on the single crystal layer,
the plurality of the protrusions being formed in an island-like pattern,
the plurality of the island-like protrusions being arranged in a prescribed crystal orientation of the substrate, and the plurality of the island-like protrusions being arranged in a plurality of directions equivalent to prescribed crystal orientation.
7. The stacked layers of claim 6 , wherein
the crack exists on a boundary between a top surface of the protrusion and a tilted side surface of the protrusion, or a boundary between the major surface of the substrate and the tilted side surface of the protrusion.
8. The stacked layers of claim 6 , wherein
the crack exists on at least one of a top portion of a side surface of the protrusion and lower portion of the side surface of the protrusion.
9. The stacked layers of claim 6 , wherein
the substrate is a sapphire substrate or a silicon substrate.
10. Stacked layers of a nitride semiconductor, comprising:
a substrate not including a nitride semiconductor and having a protrusion on a major surface;
a single crystal layer provided directly on the major surface of the substrate to cover the protrusion, and including a crack therein, the single crystal layer being an Al x Ga 1-x N (0.8≦x≦1) layer; and
a nitride semiconductor layer provided on the single crystal layer.
11. The stacked layers of claim 10 , wherein
the crack exists on a boundary between a top surface of the protrusion and a tilted side surface of the protrusion, or a boundary between the major surface of the substrate and the tilted side surface of the protrusion.
12. The stacked layers of claim 10 , wherein
the crack exists on at least one of a top portion of a side surface of the protrusion and lower portion of the side surface of the protrusion.
13. The stacked layers of claim 10 , wherein
the protrusion is provided in a plurality,
the plurality of the protrusions are formed in a stripe pattern, and
the crack extend along the one of the protrusions.
14. The stacked layers of claim 10 , wherein
the single crystal layer includes an AIN layer.
15. The stacked layers of claim 10 , wherein
the substrate is a sapphire substrate or a silicon substrate.
16. Stacked layers of a nitride semiconductor, comprising:
a substrate not including a nitride semiconductor and having a protrusion on a major surface;
a single crystal layer provided directly on the major surface of the substrate to cover the protrusion, and including a crack therein; and
a nitride semiconductor layer provided on the single crystal layer, the nitride semiconductor layer including an undoped layer provided directly on the single crystal layer.
17. The stacked layers of claim 16 , wherein
the crack exists on a boundary between a top surface of the protrusion and a tilted side surface of the protrusion, or a boundary between the major surface of the substrate and the tilted side surface of the protrusion.
18. The stacked layers of claim 16 , wherein
the crack exists on at least one of a top portion of a side surface of the protrusion and lower portion of the side surface of the protrusion.
19. The stacked layers of claim 16 , wherein
the protrusion is provided in a plurality,
the plurality of the protrusions are formed in a stripe pattern, and
the crack extend along the one of the protrusions.
20. The stacked layers of claim 16 , wherein the substrate is a sapphire substrate or a silicon substrate.