IP Library Granted Patent US 8,278,821
Granted Patent B2
US 8,278,821 · App. 13/033,911 · Granted Oct 2, 2012

Light emitting device

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Quick Facts
Patent No.
US 8,278,821
App. No.
13/033,911
Granted
Oct 2, 2012
Kind
B2
Abstract

A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm; plural red fluorescent layers that are formed above the light emitting element to include a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and plural green fluorescent layers that are formed above the light emitting element to include a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers.

Claims (333)

1. A light emitting device comprising:

a light emitting element emitting light having wavelength of 250 nm to 500 nm;

red fluorescent layers formed above the light emitting element, each of the red fluorescent layers including a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals;

green fluorescent layers formed above the light emitting element, each of the green fluorescent layers including a green fluorescent material, a distance between the light emitting element and the green fluorescent lavers being larger than a distance between the light emitting element and the red fluorescent layers; and

a medium layer formed on the light emitting element, the medium layer being transparent, the medium layer including projections and recesses on a surface thereof, wherein

the red fluorescent layers are formed in the recesses, and

the green fluorescent layers are formed on the projections.

2. The device according to claim 1 , wherein

a cross-section of the medium layer above an upper surfaces of the red fluorescent layers has a shape in which trapezoids are adjacent to each other with a gap “b”, a side of the light emitting element is set to a lower base, “a” is a length of the lower base, “c” is a height, and “θ” and “φ” are angles in end portions of the lower base, and

equations (1) and (2) are satisfied when n 2 is a refractive index of the medium layer while n 1 is a refractive index of a substance being in contact with two sides of the trapezoidal shape;

tan

θ

tan

ϕ

+

α

(

tan

θ

-

tan

ϕ

)

tan

θ

+

α

(

tan

θtan

ϕ

-

1

)

<

(

n

2

n

1

)

2

-

1

(

1

)

tan

θ

tan

ϕ

+

α

(

tan

ϕ

-

tan

θ

)

tan

ϕ

+

α

(

tan

θtan

ϕ

-

1

)

<

(

n

2

n

1

)

2

-

1

(

2

)

(where α=c/(a+b)).

3. The device according to claim 2 wherein equation (3) is satisfied when both the angles θ and φ are 90 degrees and n 1 =1 and n 2 =n.

c

a

+

b

>

1

n

2

-

1

(

3

)

4. A light emitting device comprising:

a light emitting element emitting light having wavelength of 250 nm to 500 nm;

red fluorescent layers formed above the light emitting element, each of the red fluorescent layers including a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and

green fluorescent layers formed above the light emitting element, each of the green fluorescent layers including a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers,

wherein the red fluorescent material has a composition expressed by equation (4):

(M l−xl Eu x1 ) a Si b AlO c N d   (4)

(In the equation (4), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aluminum), rare-earth elements, and IVB group elements. x1, a, b, c, and d satisfy the following relationship:

0<x1≦1,

0.60<a<0.95,

2.0<b<3.9,

0.04≦c≦0.6,

4<d<5.7).

5. The device according to claim 1 ,

wherein the green fluorescent material has a composition expressed by equation (5):

(M′ 1−x2 EU x2 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (5)

(In the equation (5), M′ is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aluminum), rare-earth elements, and IVB group elements. x2, y, z, u, and w satisfy the following relationship:

0<x2≦1,

−0.1≦y≦0.15,

−1≦z≦1,

−1 21 u−w ≦1.5,

0≦w≦21).

6. The device according to claim 4 , wherein the green fluorescent material has a composition expressed by the equation (5):

(M′ 1−x2 EU x2 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (5)

(In the equation (5), M′ is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x2, y, z, u, and w satisfy the following relationship:

0<x2≦1,

−0.1≦y≦0.15,

−1≦z≦1,

−1 <u≦w ≦1.5,

0≦w≦21).

7. The device according to claim 1 , wherein the medium layer is sapphire.

8. The device according to claim 1 , wherein the light emitting element is a blue LED.

9. The device according to claim 4 , wherein the element M is strontium (Sr).

10. A light emitting device comprising:

a light emitting element emitting light having wavelength of 250 nm to 500 nm;

red fluorescent layers formed above the light emitting element, each of the red fluorescent layers including a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals;

a green fluorescent layer formed above the light emitting element, the green fluorescent layer including a green fluorescent material, a distance between the light emitting element and the green fluorescent layer being larger than a distance between the light emitting element and the red fluorescent layers; and

a medium layer formed on the light emitting element, the medium layer being transparent, the medium layer including projections and recesses on a surface thereof, wherein

the red fluorescent layers are formed in the recesses, and

the green fluorescent layer is formed on the projections.

11. The device according to claim 10 , wherein

a cross-section of the medium layer above an upper surfaces of the red fluorescent layers has a shape in which trapezoids are adjacent to each other with a gap “b”, a side of the light emitting element is set to a lower base, “a” is a length of the lower base, “c” is a height, and “θ” and “φ” are angles in end portions of the lower base, and

equations (1) and (2) are satisfied when n 2 is a refractive index of the medium layer while n 1 is a refractive index of a substance being in contact with two sides of the trapezoidal shape;

tan

θ

tan

ϕ

+

α

(

tan

θ

-

tan

ϕ

)

tan

θ

+

α

(

tan

θtan

ϕ

-

1

)

<

(

n

2

n

1

)

2

-

1

(

1

)

tan

θ

tan

ϕ

+

α

(

tan

ϕ

-

tan

θ

)

tan

ϕ

+

α

(

tan

θtan

ϕ

-

1

)

<

(

n

2

n

1

)

2

-

1

(

2

)

(where α=c/(a+b)).

12. The device according to claim 11 , wherein equation (3) is satisfied when both the angles θ and φ are 90 degrees and n 1 =1 and n 2 =n.

c

a

+

b

>

1

n

2

-

1

(

3

)

13. A light emitting device comprising:

a light emitting element emitting light having wavelength of 250 nm to 500 nm,

red fluorescent layers formed above the light emitting element, each of the red fluorescent layers including a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and

a green fluorescent layer formed above the light emitting element, the green fluorescent layer including a green fluorescent material, a distance between the light emitting element and the green fluorescent layer being larger than a distance between the light emitting element and the red fluorescent layers,

wherein the red fluorescent material has a composition expressed by equation (4):

(M 1−x1 Eu x1 ) a Si b AlO c N d   (4)

(In the equation (4), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aluminum), rare-earth elements, and IVB group elements x1, a, b, c, and d satisfy the following relationship:

0<x1 ≦1,

0.60<a<0.95,

2.0<b<3.9,

0.04≦c≦0.6,

4<d<5.7).

14. The device according to claim 10 , wherein the green fluorescent material has a composition expressed by equation (5):

(M′ 1−x2 Eu x2 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (5)

(In the equation (5), M′ is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aluminum), rare-earth elements, and IVB group elements. x2, y, z, u, and w satisfy the following relationship:

0<x2≦1,

−0.1≦y≦0.15,

−1≦z≦1,

−1< u−w ≦1.5,

0≦w≦21).

15. The device according to claim 13 , wherein the green fluorescent material has a composition expressed by the equation (5):

(M′ 1−x2 Eu x2 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (5)

(In the equation (5), M′ is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x2, y, z, u, and w satisfy the following relationship:

0 <x2 ≦1,

−0.1 ≦y≦0.15,

−1<z<1,

−1< u−w ≦1.5,

0 ≦w≦21).

16. The device according to claim 10 , wherein the medium layer is sapphire.

17. The device according to claim 10 , wherein the light emitting element is a blue LED.

18. The device according to claim 13 , wherein the element M is strontium (Sr).

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: ALPAD CORPORATION
Reel/Frame 044591/0755 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2011
From: ISHIDA, KUNIO; MITSUISHI, IWAO; HIRAMATSU, RYOSUKE; FUKUDA, YUMI; ALBESSARD, KEIKO; MATSUDA, NAOTOSHI; OKADA, AOI; NUNOUE, SHINYA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 025860/0989 →