Semiconductor light emitting device and semiconductor light emitting apparatus

1. A semiconductor light emitting device, comprising:

a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and

a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer,

the second electrode including:

a first film provided on the second semiconductor layer, the first film being physically in contact with the second semiconductor layer, the first film having a first contact resistance with the second semiconductor layer; and

a second film provided along a rim of the first film, on the rim, and on the second semiconductor layer, a part of the second film being in contact with the second semiconductor layer, the second film having a second contact resistance with the second semiconductor layer, the second contact resistance being higher than the first contact resistance,

a maximum value of a first distance from an outer edge of the second film to the first film at a first region being smaller than a minimum value of a second distance from the outer edge of the second film to the first film at a second region, the first region being between the first film and the first electrode, the second region being a portion where the first film does not oppose the first electrode.

2. The device according to claim 1 , wherein

the first major surface includes:

a first portion, and

a second portion provided along an outer edge of the first major surface and surrounding the first portion, a distance from the outer edge of the first major surface to the second portion is shorter than a distance from the outer edge of the first major surface to the first portion,

a first width of a region where the second film contacts the second semiconductor layer in the first portion is narrower than a second width of a region where the second film contacts the second semiconductor layer in the second portion.

3. The device according to claim 1 , wherein the first film is ohmic with respect to the second semiconductor layer and the second film is non-ohmic with respect to the second semiconductor layer.

4. The device according to claim 1 , wherein the first film includes silver or silver alloy.

5. The device according to claim 1 , wherein the second film includes Al or Al alloy.

6. The device according to claim 1 , wherein a first width of a region where the second film contacts the second semiconductor layer in the first region is narrower a second width of a region where the second film contacts the second semiconductor layer in the second region.

7. The device according to claim 6 , wherein the second film is refractive.

8. The device according to claim 1 , wherein

the first major surface includes:

a first portion, and

a second portion provided along an outer edge of the first major surface and surrounding the first portion, a distance from the outer edge of the first major surface to the second portion is shorter than a distance from the outer edge of the first major surface to the first portion,

a distance from the outer edge of the second film to the first film at the first portion is smaller than a distance from the outer edge of the second film to the first film at a second portion.

9. The device according to claim 6 , wherein the second film is refractive.