Method and apparatus for manufacturing LED devices using laser scribing
View Patent ↗A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
1. An apparatus for laser scribing, comprising:
a semiconductor wafer including,
a light emitting diode (“LED”) layer wherein the LED layer is disposed on a front side of semiconductor wafer;
a substrate layer coupled to the LED layer;
a metal layer coupled to the substrate layer, wherein the metal layer is disposed on a back side of the semiconductor wafer; and
a laser device situated above the front side of the semiconductor wafer configured to guide a laser beam entering from the front side of the semiconductor wafer, wherein a high intensity laser beam is focused to an area inside the substrate layer located near the back side of the semiconductor wafer, wherein at least a portion of the laser beam penetrates an active portion of an LED device without substantially changing performance of the LED device.
2. The apparatus of claim 1 , wherein the high intensity portion of the laser beam is capable of destroying at least a portion of crystal lattice of the area.
3. The apparatus of claim 1 , wherein the LED layer includes a plurality of LED devices deposited over the substrate layer separated by a plurality of streets.
4. The apparatus of claim 3 , wherein the LED layer includes:
a first conductive layer deposited over the substrate layer;
an active layer deposited over the first conductive layer and configured to convert electrical energy to light; and
a second conductive layer having a first surface overlying the active layer and a second surface opposite to the first surface to form a light-emitting semiconductor.
5. The apparatus of claim 4 ,
wherein the first conductive layer is an n-type indium gallium nitride (“InGaN”) layer; and
wherein the second conductive layer is a p-type InGaN layer.
6. The apparatus of claim 4 ,
wherein the first conductive layer is an n-type gallium nitride (“GaN”) layer; and
wherein the second conductive layer is a p-type GaN layer.
7. The apparatus of claim 1 , wherein the substrate layer is made of sapphire material having a range of thickness between 50 to 400 micrometers.
8. The apparatus of claim 1 , wherein the metal layer coupled to the substrate layer includes aluminum mirror sub-layer and a silver sub-layer.
9. The apparatus of claim 1 , wherein the laser beam entering from the front side of the semiconductor wafer is configured to travel through at least a portion of the substrate without substantial photon absorption.
10. The apparatus of claim 2 , wherein the portion of crystal lattice of the substrate layer closer to the metal layer is situated between 0 to 50 micrometers from the metal layer.
11. An LED lamp capable of providing light comprising an LED manufactured by an apparatus of claim 1 .
12. A laser cutting system, comprising:
a semiconductor wafer including a metal layer having a silver sub-layer, a substrate deposited over the metal layer, and a light emitting diode (“LED”) layer deposited over the substrate; and
a laser device, situated over the LED layer of the semiconductor wafer, configured to focus a high intensity laser beam at an area inside the substrate layer slightly away from the metal layer of the semiconductor wafer, wherein a portion of the high intensity laser beam penetrates a portion of an LED device in the LED layer without substantially affecting performance of the LED device.
13. The system of claim 12 , wherein the high intensity laser beam is capable of destroying at least a portion of crystal lattice of the area.
14. The system of claim 12 , wherein the LED layer includes a plurality of LED devices deposited over the substrate layer separated by a plurality of streets.
15. The system of claim 12 , wherein the LED layer includes:
a first conductive layer deposited over the substrate layer;
an active layer deposited over the first conductive layer and configured to convert electrical energy to light; and
a second conductive layer having a first surface overlying the active layer and a second surface opposite to the first surface to form a light-emitting semiconductor.
16. The system of claim 15 ,
wherein the first conductive layer is an n-type indium gallium nitride (“InGaN”) layer; and
wherein the second conductive layer is a p-type InGaN layer.
17. The system of claim 15 ,
wherein the first conductive layer is an n-type gallium nitride (“GaN”) layer; and
wherein the second conductive layer is a p-type GaN layer.
18. The system of claim 12 , wherein the substrate layer is made of sapphire material having a range of thickness between 50 to 400 micrometers.
19. The system of claim 12 , wherein the metal layer includes aluminum mirror sub-layer.
20. The system of claim 12 , wherein the laser beam enters from a front side of the semiconductor wafer traveling through at least a portion of the substrate without substantial photon absorption.