Patent Assignment
Reel/Frame 030724/0395
Assignment of Assignor's Interest
Recorded: 2013-07-01
Pages: 10
Assignor
BRIDGELUX, INC.
Executed: 2013-05-16
Assignee
TOSHIBA TECHNO CENTER INC.
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 105-8001, JAPAN
Covered Properties
(70)
Iii-Nitride Based on Semiconductor Device with Low-Resistance Ohmic Contacts
Light emitter with metal-oxide coating
Highly Reflective Mounting Arrangement for Leds
Patent:
7,622,746 →
Application:
11/378,763 →
Electrode Structures for Leds with Increased Active Area
Surface Mountable Chip
Gan Based Led with Etched Exposed Surface for Improved Light Extraction Efficiency and Method for Making the Same
Slab Cross Flow Cvd Reactor
Gan Based Led Having Reduced Thickness and Method for Making the Same
Chemical Vapor Deposition Reactor Having Multiple Inlets
Led Structure
Machined Cvd Shower Head
Light Emitting Devices with Constant Forward Voltage
Trenched Substrate for Crystal Growth and Wafer Bonding
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Light Emitting Device Having Stacked Multiple Leds
Drilled Cvd Shower Head
Led Structure to Increase Brightness
Surface Mountable Chip
Series Connected Segmented Led
Inverted Led Structure with Improved Light Extraction
Wire Bonding to Connect Electrodes
Method and Apparatus for Providing a Patterned Electrically Conductive and Optically Transparent or Semi-Transparent Layer Over a Lighting Semiconductor Device
Method and Apparatus for Manufacturing Led Devices Using Laser Scribing
Light-Emitting Device With Improved Electrode Structures
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
High Brightness Led Utilizing a Roughened Active Layer and Conformal Cladding
Light Emitter with Coating Layers
Application:
12/607,053 →
Publication:
US 2014/0124806
Highly Reflective Mounting Arrangement for Leds
Patent:
8,324,652 →
Application:
12/610,261 →
Surface Mountable Chip
LED with Improved Injection Efficiency
Gan Based Led with Improved Light Extraction Efficiency and Method for Making the Same
Light Sources with Serially Connected Led Segments Including Current Blocking Diodes
Electrode Structures for Leds with Increased Active Area
Inverted Led Structure with Improved Light Extraction
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Gan Based Led Having Reduced Thickness and Method for Making the Same
Led Structure to Increase Brightness
Method and Apparatus for Manufacturing Led Devices Using Laser Scribing
LED-Based Light Source Utilizing Asymmetric Conductors
Cross Flow Cvd Reactor
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Series Connected Segmented Led
Laterally Contacted Blue Led with Superlattice Current Spreading Layer
Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
Application:
13/190,420 →
Publication:
US 2013/0026480
Boron-Containing Buffer Layer for Growing Gallium Nitride on Silicon
N-Type Gallium-Nitride Layer Having Multiple Conductive Intervening Layers
High Temperature Gold-Free Wafer Bonding for Light Emitting Diodes
Led Having a Low Defect N-Type Layer That Has Grown on a Silicon Substrate
Non-Reactive Barrier Metal for Eutectic Bonding Process
Led on Silicon Substrate Using Zinc-Sulfide as Buffer Layer
Application:
13/197,765 →
Publication:
US 2013/0032810
Distributed Current Blocking Structures for Light Emitting Diodes
Led Structure
GaN LEDs with Improved Area and Method for Making the Same
Buffer Layer for GaN-on-Si LED
P-Type Doping Layers for Use with Light Emitting Devices
Light Emitting Regions for Use with Light Emitting Devices
Light Emitting Devices Having Dislocation Density Maintaining Buffer Layers
Application:
13/249,157 →
Publication:
US 2013/0082274
Light Emitting Devices Having Light Coupling Layers
Light Emitting Devices Having Light Coupling Layers with Recessed Electrodes
Series Connected Segmented Led
Method for Reducing Stress in Epitaxial Growth
Gold Micromask for Roughening to Promote Light Extraction in an Led
Method for manufacturing a light emitting diode with smooth surface for reflective electrode
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Distributed Bragg Reflector for Reflecting Light of Multiple Wavelengths from an Led
LED That Has Bounding Silicon-Doped Regions on Either Side of a Strain Release Layer
Patent:
8,669,585 →
Application:
13/602,145 →
GaN Based LED Having Reduced Thickness and Method for Making the Same
Light Emitting Devices Having Shielded Silicon Substrates
Application:
61/661,982 →
Submount for LED Device Package
Application:
61/669,955 →
Related Assignments
(20)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name
May 9, 2012
From: ELITE OPTOELECTRONICS, INC.
To: BRIDGELUX, INC.
Reel/Frame 028184/0745 →
Security Agreement
Nov 12, 2012
From: BRIDGELUX, INC.
To: WHITE OAK GLOBAL ADVISORS, LLC, AS COLLATERAL AGENT
Reel/Frame 029281/0844 →
Assignment of Assignor's Interest
Jun 24, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033169/0625 →
Assignment of Assignor's Interest
Jul 8, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033265/0062 →
Assignment of Assignor's Interest
Jul 28, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033400/0957 →
Assignment of Assignor's Interest
Aug 1, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033443/0908 →
Assignment of Assignor's Interest
Aug 14, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033540/0184 →
Assignment of Assignor's Interest
Aug 28, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033634/0410 →
Assignment of Assignor's Interest
Sep 16, 2014
From: TOSHIBA TECHNO CENTER INC.
To: MANUTIUS IP, INC.
Reel/Frame 033749/0539 →
Assignment of Assignor's Interest
Sep 22, 2014
From: TOSHIBA TECHNO CENTER INC.
To: MANUTIUS IP, INC.
Reel/Frame 033787/0733 →
Corrective Assignment to Correct the Receiving Party's Address Previously Recorded at Reel: 033749 Frame: 0539. Assignor(S) Hereby Confirms the Assignment.
Sep 25, 2014
From: TOSHIBA TECHNO CENTER INC.
To: MANUTIUS IP, INC.
Reel/Frame 033818/0900 →
Assignment of Assignor's Interest
Apr 20, 2016
From: MANUTIUS IP, INC.
To: TOSHIBA CORPORATION
Reel/Frame 038334/0444 →
Assignment of Assignor's Interest
Dec 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: ALPAD CORPORATION
Reel/Frame 044591/0755 →
Assignment of Assignor's Interest
Jun 14, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Reel/Frame 046364/0164 →
Assignment of Assignor's Interest
Jul 25, 2018
From: TOSHIBA CORPORATION
To: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Reel/Frame 046450/0700 →
Assignment of Assignor's Interest
Aug 30, 2018
From: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 046986/0159 →
Assignment of Assignor's Interest
Sep 5, 2019
From: TOSHIBA IPR SOLUTIONS, INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 050278/0857 →
Change of Name
Sep 5, 2019
From: TOSHIBA TECHNO CENTER, INC.
To: TOSHIBA IPR SOLUTIONS, INC.
Reel/Frame 050278/0704 →
Assignment of Assignor's Interest
Jan 24, 2020
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRONIC DEVICES AND STORAGE CORPORATION
Reel/Frame 051691/0442 →
Assignment of Assignor's Interest
Apr 6, 2020
From: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
To: SEOUL SEMICONDUCTOR CO., LTD.
Reel/Frame 052316/0044 →