Trenched substrate for crystal growth and wafer bonding
View Patent ↗A substrate for a light emitting diode (LED) can have one or more trenches formed therein so as to mitigate stress build up within the substrate due to mismatched thermal coefficients of expansion between the substrate and layers of material, e.g., semiconductor material, formed thereon. In this manner, the likelihood of damage to the substrate, such as cracking thereof, is substantially mitigated.
1. A device comprising:
a wafer having an upper surface and a bottom surface:
a layer of material formed on the upper surface of the wafer;
at least one trench formed on an upper surface of the layer; and
an LED including a plurality of semiconductor layers, which are formed on the upper surface of the layer and the trench(es),
wherein the trench(es) are configured to mitigate stress caused by a difference between a thermal coefficient of expansion of the wafer and a thermal coefficient of expansion of the plurality of semiconductor layers.
2. The device as recited in claim 1 , wherein the wafer comprises sapphire.
3. The device as recited in claim 1 , wherein the trench(es) are generally linear.
4. The device as recited in claim 1 , wherein the trench(es) define a cross-hatched pattern.
5. The device as recited in claim 1 , wherein the trench(es) define a regular pattern.
6. The device as recited in claim 1 , wherein a depth of the trench(es) is approximately ⅓ of a thickness of the layer.
7. The device as recited in claim 1 , wherein the trench(es) are generally rectangular in cross-section.
8. The device as recited in claim 1 , wherein the trench(es) are generally u-shaped in cross-section.
9. The device as recited in claim 1 , wherein the trench(es) are generally v-shaped in cross-section.
10. The device as recited in claim 1 , wherein the trench(es) extend along at least one crystal lattice direction.
11. The device as recited in claim 1 , wherein the trench(es) extend along a plurality of crystal lattice directions.
12. The device as recited in claim 1 , wherein:
a diameter of the wafer is between approximately 1/4 inch and approximately twelve inches;
a thickness of the wafer is between approximately 100 microns and four millimeters;
a width of the trench(es) is between approximately one micron and approximately 100 microns; and
a distance between the trenches is between approximately 100 microns and approximately 2 millimeters.
13. The device as recited in claim 1 , wherein:
a diameter of the wafer is approximately two inches;
a thickness of the wafer is approximately 400 microns;
a width of the trench(es) is approximately 20 microns; and
a distance between the trenches is approximately 200 microns.
14. The device as recited in claim 1 , wherein the trench(es) have a depth between approximately 1/6 and approximately 1/2 of a thickness of the wafer.
15. The device as recited in claim 1 , wherein at least some of the trench(es) have a length approximately equal to a diameter of the wafer.
16. The device as recited in claim 1 , wherein at least some of the trench(es) have a length approximately equal to a circumference of the wafer.
17. The device as recited in claim 1 , further comprising at least one trench formed on the bottom surface of the wafer, wherein the trench(es) formed on the bottom surface of the wafer are configured to mitigate stress within the wafer caused by the difference between the thermal coefficient of expansion of the wafer and the thermal coefficient of expansion of the plurality of semiconductor layers.
18. The device as recited in claim 1 , wherein the trench(es) define a concentric circle pattern.
19. The device as recited in claim 1 , wherein at least some of the trench(es) formed on the bottom surface of the wafer have a length approximately equal to a diameter of the wafer.
20. The device as recited in claim 1 , wherein at least some of the trench(es) formed on the bottom surface of the wafer have a length approximately equal to a circumference of the wafer.
21. The device as recited in claim 1 , further comprising at least one trench formed on the upper surface of the wafer, wherein the trench(es) formed on the upper surface of the wafer are configured to mitigate stress within the wafer caused by the difference between the thermal coefficient of expansion of the wafer and the thermal coefficient of expansion of the plurality of semiconductor layers.
22. The device as recited in claim 1 , further comprising at least one trench formed on the upper surface of the wafer and at least one trench formed on the bottom surface of the wafer, wherein the trench(es) formed on the upper surface of the wafer and the trench(es) formed on the bottom surface of the wafer are configured to mitigate stress within the wafer caused by the difference between the thermal coefficient of expansion of the wafer and the thermal coefficient of expansion of the plurality of semiconductor layers.
23. A device comprising:
a wafer having an upper surface and a bottom surface;
a layer formed on the upper surface of the wafer and having at least one trench, the trench(es) formed on an upper surface of the layer and having a depth between approximately 1/6 and approximately 1/2 of a thickness of the wafer; and
an LED including a plurality of semiconductor layers, which are formed on the upper surface of the layer and the trench(es),
wherein the trench(es) are configured to mitigate stress caused by a difference between a thermal coefficient of expansion of the wafer and a thermal coefficient of expansion of the plurality of semiconductor layers, and
the trench(es) define a concentric circle pattern.
24. The device as recited in claim 23 , further comprising at least one trench formed on the bottom surface of the wafer, wherein the trench(es) formed on the bottom surface of the wafer are configured to mitigate stress within the wafer caused by a difference between a thermal coefficient of expansion of the wafer and a thermal coefficient of expansion of the plurality of semiconductor layers.
25. The device as recited in claim 24 , wherein the trench(es) formed on the bottom surface of the wafer have a depth between approximately 1/6 and approximately 1/2 of a thickness of the wafer.
26. The device as recited in claim 23 , further comprising at least one trench formed on the upper surface of the wafer, wherein the trench(es) formed on the upper surface of the wafer are configured to mitigate stress within the wafer caused by a difference between a thermal coefficient of expansion of the wafer and a thermal coefficient of expansion of the plurality of semiconductor layers.
27. The device as recited in claim 23 , further comprising at least one trench formed on the upper surface of the wafer and at least one trench formed on the bottom surface of the wafer, wherein the trench(es) formed on the upper surface of the wafer and the trench(es) formed on the bottom surface of the wafer are configured to mitigate stress within the wafer caused by a difference between a thermal coefficient of expansion of the wafer and a thermal coefficient of expansion of the plurality of semiconductor layers.