IP Library › Assignment 030466/0093
Patent Assignment
Reel/Frame 030466/0093

Release of Security Interest

Recorded: 2013-05-22 Received: 2013-05-22 Pages: 16
Assignor
Assignee
BRIDGELUX, INC.
101 PORTOLA AVENUE, LIVERMORE, CA, 94551, UNITED STATES
Covered Properties (79)
Efficient Coding of Binary Strings for Low Bit Rate Entropy Audio Coding
Application: 13/988,887 →
GaN Based LED Having Reduced Thickness and Method for Making the Same
Application: 13/754,517 →
Spa and Pool Directional Flow Component
Application: 29/434,825 →
LED That Has Bounding Silicon-Doped Regions on Either Side of a Strain Release Layer
Application: 13/602,145 →
Distributed Bragg Reflector for Reflecting Light of Multiple Wavelengths from an Led
Application: 13/587,746 →
Submount for LED Device Package
Application: 61/669,955 →
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Application: 13/532,749 →
Light Emitting Devices Having Shielded Silicon Substrates
Application: 61/661,982 →
Method for manufacturing a light emitting diode with smooth surface for reflective electrode
Application: 13/447,574 →
Light Emitting Devices Having Shielded Silicon Substrates
Application: 61/622,710 →
Gold Micromask for Roughening to Promote Light Extraction in an Led
Application: 13/359,428 →
Multi-Junction LED
Application: 13/294,984 →
Series Connected Segmented Led
Application: 13/292,938 →
Method for Reducing Stress in Epitaxial Growth
Application: 13/293,031 →
Light Emitting Devices Having Light Coupling Layers
Application: 13/249,184 →
Light Emitting Regions for Use with Light Emitting Devices
Application: 13/249,146 →
Light Emitting Devices Having Dislocation Density Maintaining Buffer Layers
Application: 13/249,157 →
Light Emitting Devices Having Light Coupling Layers with Recessed Electrodes
Application: 13/249,196 →
P-Type Doping Layers for Use with Light Emitting Devices
Application: 13/248,821 →
Buffer Layer for GaN-on-Si LED
Application: 13/227,406 →
GaN LEDs with Improved Area and Method for Making the Same
Application: 13/226,404 →
Led Structure
Application: 13/214,725 →
Distributed Current Blocking Structures for Light Emitting Diodes
Application: 13/198,664 →
Led on Silicon Substrate Using Zinc-Sulfide as Buffer Layer
Application: 13/197,765 →
Led Having a Low Defect N-Type Layer That Has Grown on a Silicon Substrate
Application: 13/196,854 →
N-Type Gallium-Nitride Layer Having Multiple Conductive Intervening Layers
Application: 13/196,828 →
High Temperature Gold-Free Wafer Bonding for Light Emitting Diodes
Application: 13/196,839 →
Non-Reactive Barrier Metal for Eutectic Bonding Process
Application: 13/196,870 →
Boron-Containing Buffer Layer for Growing Gallium Nitride on Silicon
Application: 13/194,744 →
Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
Application: 13/190,420 →
Laterally Contacted Blue Led with Superlattice Current Spreading Layer
Application: 13/178,497 →
Series Connected Segmented Led
Application: 13/049,492 →
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Application: 13/033,533 →
Cross Flow Cvd Reactor
Application: 12/978,842 →
LED-Based Light Source Utilizing Asymmetric Conductors
Application: 12/941,799 →
Method and Apparatus for Manufacturing Led Devices Using Laser Scribing
Application: 12/906,349 →
Led Structure to Increase Brightness
Application: 12/892,796 →
Gan Based Led Having Reduced Thickness and Method for Making the Same
Application: 12/860,162 →
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Application: 12/835,632 →
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Application: 12/834,747 →
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Application: 12/790,597 →
Inverted Led Structure with Improved Light Extraction
Application: 12/779,813 →
Electrode Structures for Leds with Increased Active Area
Application: 12/772,767 →
Light Sources with Serially Connected Led Segments Including Current Blocking Diodes
Application: 12/725,424 →
Light-Emitting Diode Chip with High Light Extraction and Method for Manufacturing the Same
Application: 12/701,336 →
Gan Based Led with Improved Light Extraction Efficiency and Method for Making the Same
Application: 12/688,918 →
LED with Improved Injection Efficiency
Application: 12/626,474 →
Surface Mountable Chip
Application: 12/614,430 →
Highly Reflective Mounting Arrangement for Leds
Application: 12/610,261 →
Light Emitter with Coating Layers
Application: 12/607,053 →
High Brightness Led Utilizing a Roughened Active Layer and Conformal Cladding
Application: 12/545,358 →
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Application: 12/482,413 →
Light-Emitting Device With Improved Electrode Structures
Application: 12/472,809 →
Method and Apparatus for Manufacturing Led Devices Using Laser Scribing
Application: 12/434,208 →
Method and Apparatus for Providing a Patterned Electrically Conductive and Optically Transparent or Semi-Transparent Layer Over a Lighting Semiconductor Device
Application: 12/359,934 →
Wire Bonding to Connect Electrodes
Application: 12/234,601 →
Inverted Led Structure with Improved Light Extraction
Application: 12/210,845 →
Series Connected Segmented Led
Application: 12/208,502 →
Surface Mountable Chip
Application: 12/202,827 →
Drilled Cvd Shower Head
Application: 12/165,269 →
LED with Reduced Electrode Area
Application: 12/147,242 →
Light Emitting Device Having Stacked Multiple Leds
Application: 12/130,824 →
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Application: 12/120,051 →
Led Structure to Increase Brightness
Application: 61/049,612 →
Trenched Substrate for Crystal Growth and Wafer Bonding
Application: 12/111,084 →
Light Emitting Devices with Constant Forward Voltage
Application: 12/060,116 →
Machined Cvd Shower Head
Application: 12/058,380 →
Light-Emitting Chip Device with High Thermal Conductivity
Application: 12/047,165 →
Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same
Application: 12/039,563 →
Led Structure
Application: 11/952,048 →
Chemical Vapor Deposition Reactor Having Multiple Inlets
Application: 11/932,293 →
Gan Based Led Having Reduced Thickness and Method for Making the Same
Application: 11/761,223 →
Slab Cross Flow Cvd Reactor
Application: 11/740,736 →
Gan Based Led with Etched Exposed Surface for Improved Light Extraction Efficiency and Method for Making the Same
Application: 11/504,435 →
Surface Mountable Chip
Application: 11/502,940 →
Electrode Structures for Leds with Increased Active Area
Application: 11/437,974 →
Highly Reflective Mounting Arrangement for Leds
Application: 11/378,763 →
Light emitter with metal-oxide coating
Application: 11/296,006 →
Iii-Nitride Based on Semiconductor Device with Low-Resistance Ohmic Contacts
Application: 10/936,496 →