Light emitting devices with constant forward voltage
View Patent ↗A light emitting device and method for producing the same is disclosed. The light emitting device includes a semiconductor material, an electrode positioned on the semiconductor material, a wire bonding area, and a resistor connected between the wire bonding area and the electrode.
1. A light emitting device, comprising:
a semiconductor material comprising an active region, the active region comprising a resistance;
an electrode positioned on the semiconductor material and electrically coupled to the active region resistance;
a wire bonding area coupled to the electrode; and
an adjustable resistor connected in series with the active region resistance between the wire bonding area and the electrode,
wherein the adjustable resistor and the resistance of the semiconductor active region form a predetermined resistance ohmic value for the light emitting device.
2. The light emitting device of claim 1 wherein a value of resistance of the adjustable resistor is capable of adjustment by laser trimming.
3. The light emitting device of claim 1 wherein the resistor comprises one or more conductors connected in parallel.
4. The light emitting device of claim 3 wherein each of the one or more conductors are substantially planar.
5. The light emitting device of claim 3 wherein each of the one or more conductors comprises a meandering pattern between the wire bonding area and the electrode.
6. The light emitting device of claim 3 wherein the adjustable resistor comprises an area where one or more additional conductors have been removed.
7. The light emitting device of claim 3 wherein at least one of the one or more conductors have been altered.
8. The light emitting device of claim 3 further comprising a material to insulate the wire bonding area and the one or more conductors from the semiconductor material.
9. The light emitting device of claim 3 wherein each of the one or more conductors comprises at least one material selected from the group consisting of nickel and chromium.
10. A light emitting device, comprising:
a semiconductor material comprising an active region, the active region comprising a resistance;
an electrode positioned on the semiconductor material and electrically coupled to the active region resistance;
a wire bonding area coupled to the electrode; and
means for providing a resistor in series with the resistance between the wire bonding area and the electrode, wherein the resistor and the resistance of the semiconductor active region form a predetermined ohmic value for the light emitting device.
11. The light emitting device of claim 10 wherein the means for providing a resistor between the wire bonding area and the electrode comprises an adjustable resistor.
12. The light emitting device of claim 11 wherein the adjustable resistor is capable of adjustment by laser trimming.
13. The light emitting device of claim 10 wherein the means for providing a resistor between the wire bonding area and the electrode comprises one or more conductors connected in parallel.
14. The light emitting device of claim 13 wherein each of the one or more conductors is substantially planar.
15. The light emitting device of claim 13 wherein each of the one or more conductors comprises a meandering pattern between the wire bonding area and the electrode.
16. The light emitting device of claim 13 wherein the means for providing a resistor between the wire bonding area and the electrode comprises an area where one or more additional conductors have been removed.
17. The light emitting device of claim 13 wherein at least one of the one or more conductors have been altered.
18. The light emitting device of claim 13 further comprising means for insulating the wire bonding area and the one or more conductors from the semiconductor material.
19. An apparatus, comprising:
a plurality of light emitting devices connected in parallel, each of the light emitting devices comprising,
a semiconductor material comprising a resistance,
an electrode positioned on the semiconductor material and electrically coupled to the resistance;
a wire bonding area coupled to the electrode; and
an adjustable resistor connected in series with the resistance between the wire bonding area and the electrode, wherein the adjustable resistor and the resistance of the semiconductor material form a predetermined ohmic value for the light emitting device; and
wherein each of the light emitting devices comprises a forward voltage within a predetermined tolerance.