Patent Assignment
Reel/Frame 052316/0044
Assignment of Assignor's Interest
Recorded: 2020-04-06
Pages: 11
Assignor
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Executed: 2020-03-27
Assignee
SEOUL SEMICONDUCTOR CO., LTD.
97-11, SANDAN-RO 163 BEON-GIL, DANWON-GU, ANSAN-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Properties
(137)
Semiconductor Light Emitting Device
Patent:
6,479,836 →
Application:
09/641,215 →
Semiconductor Light Emitting Device and Method for Manufacturing Same
Optical Device, Surface Emitting Type Device and Method for Manufacturing the Same
Laminated Semiconductor Substrate and Optical Semiconductor Element
Nitride Compound Semiconductor Element
Laminated Semiconductor Substrate and Optical Semiconductor Element
Semiconductor Light-Emitting Element and Light-Emitting Device
Semiconductor Light Emitting Device
Semiconductor Device
Semiconductor Light-Emitting Device
Slab Cross Flow Cvd Reactor
Semiconductor Light Emitting Device
Led Structure
Light Emitting Devices with Constant Forward Voltage
Drilled Cvd Shower Head
Light-Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Wire Bonding to Connect Electrodes
Silicone Resin Composition
Semiconductor Light-Emitting Device
Light Emitting Device
Semiconductor Light-Emitting Device
Semiconductor Light Emitting Device and Wafer
Semiconductor Device, Method for Fabricating an Electrode, and Method for Manufacturing a Semiconductor Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Highly Reflective Mounting Arrangement for Leds
Patent:
8,324,652 →
Application:
12/610,261 →
Fluorescer Solution, Light-Emitting Device, and Method for Manufacturing Same
Light Emitting Device
Semiconductor Light Emitting Device
Light Emitting Device
Gan Based Led with Improved Light Extraction Efficiency and Method for Making the Same
Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Semiconductor Device and Apparatus for Manufacturing Same
Inverted Led Structure with Improved Light Extraction
Light Emitting Device, and Method and Apparatus for Manufacturing Same
Led Package and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device, Wafer, Method for Manufacturing Semiconductor Light Emitting Device, and Method for Manufacturing Wafer
Light Emitting Device
Nitride Semiconductor Device
Method for Manufacturing a Semiconductor Light Emitting Device
Patent:
8,093,083 →
Application:
13/029,416 →
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device with an Aluminum Containing Layer Formed Thereon
Semiconductor Light Emitting Device and Wafer
N-Type Gallium-Nitride Layer Having Multiple Conductive Intervening Layers
High Temperature Gold-Free Wafer Bonding for Light Emitting Diodes
Semiconductor Light Emitting Device and Wafer
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Optical Semiconductor Device
Led Structure
Light Emitting Devices Having Light Coupling Layers with Recessed Electrodes
Semiconductor Light Emitting Device
Method for Manufacturing Semiconductor Light Emitting Device and Semiconductor Light Emitting Device Wafer
Nitride Semiconductor Wafer Including Different Lattice Constants
Semiconductor Light Emitting Device, Wafer, Method for Manufacturing Semiconductor Light Emitting Device, and Method for Manufacturing Wafer
Method for Fabricating Stacked Nitride-Compound Semiconductor Structure and Method for Fabricating Nitride-Compound Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Method for Manufacturing Semiconductor Light Emitting Element
Light-Emitting Device Including Sealing Units with Different Phosphor Concentrations
Semiconductor Light-Emitting Device and Manufacturing Method of the Same
Semiconductor Light Emitting Device and Wafer
GaN Based LED Having Reduced Thickness and Method for Making the Same
Nitride Semiconductor Light-Emitting Element
Semiconductor Device, Nitride Semiconductor Wafer, and Method for Forming Nitride Semiconductor Layer
Semiconductor Light Emitting Device
Method for Manufacturing Semiconductor Device
Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Light Emitting Device and Method for Manufacturing the Same
Device Module
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Manufacturing Method Thereof
Method for Manufacturing Nitride Semiconductor Layer and Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Nitride Semiconductor Device, Nitride Semiconductor Wafer, and Method for Manufacturing Nitride Semiconductor Layer
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Nitride Semiconductor Light Emitting Device
Semiconductor Light Emitting Element and Method for Manufacturing Same
Distributed Bragg Reflector for Reflecting Light of Multiple Wavelengths from an Led
Nitride Semiconductor Device Including a Doped Nitride Semiconductor Between Upper and Lower Nitride Semiconductor Layers
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Element and Method for Manufacturing the Same
Submount for Led Device Package
Semiconductor Light Emitting Device
Led on Silicon Substrate Using Zinc-Sulfide as Buffer Layer
Semiconductor Light Emitting Element and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Light Emitting Module
Semiconductor Light Emitting Element and Method for Manufacturing the Same
Nitride Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Light Emitting Device
Light Emitting Device
Semiconductor Device
High Efficiency Light Emitting Diode Package Suitable for Wafer Level Packaging
Semiconductor Light Emitting Device and Light Emitting Apparatus
Semiconductor Light Emitting Element
Semiconductor Light Emitting Element
Semiconductor Light Emitting Element and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Semiconductor Wafer with First and Second Portions with Different Lattice Polarities.
Semiconductor Light Emitting Element and Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Element and Method for Manufacturing Semiconductor Light Emitting Element
Semiconductor Light Emitting Element
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Light Emitting Device Including Reinforcing Member
Nitride Semiconductor Element and Nitride Semiconductor Wafer
Semiconductor Light Emitting Element with Conductive Layer Having Outer Edge Positioned Inside Outer Edge of Laminated Body
Semiconductor Light-Emitting Device
Semiconductor Light Emitting Element
Chip-On-Heatsink Light Emitting Diode Package and Fabrication Method
Patent:
9,324,697 →
Application:
14/659,029 →
Semiconductor Light Emitting Element
Semiconductor Light Emitting Device, Including a Plurality of Barrier Layers and a Plurality of Well Layers, and Method for Manufacturing the Same
Nitride Semiconductor Layer, Nitride Semiconductor Device, and Method for Manufacturing Nitride Semiconductor Layer
Semiconductor Light Emitting Element and Method for Manufacturing the Same
Semiconductor Device, Nitride Semiconductor Wafer, and Method for Forming Nitride Semiconductor Layer
Semiconductor Light Emitting Device and Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Element
Semiconductor Light Emitting Device
Semiconductor Light Emitting Element and Method for Manufacturing the Same
Semiconductor Light Emitting Element
Related Assignments
(8)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement
Nov 12, 2012
From: BRIDGELUX, INC.
To: WHITE OAK GLOBAL ADVISORS, LLC, AS COLLATERAL AGENT
Reel/Frame 029281/0844 →
Assignment of Assignor's Interest
Jul 1, 2013
From: BRIDGELUX, INC.
To: TOSHIBA TECHNO CENTER INC.
Reel/Frame 030724/0395 →
Assignment of Assignor's Interest
Jul 8, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033265/0062 →
Assignment of Assignor's Interest
Aug 1, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033443/0908 →
Assignment of Assignor's Interest
Aug 28, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033634/0410 →
Change of Name
Sep 5, 2019
From: TOSHIBA TECHNO CENTER, INC.
To: TOSHIBA IPR SOLUTIONS, INC.
Reel/Frame 050278/0704 →
Assignment of Assignor's Interest
Sep 5, 2019
From: TOSHIBA IPR SOLUTIONS, INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 050278/0857 →
Assignment of Assignor's Interest
Jan 24, 2020
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRONIC DEVICES AND STORAGE CORPORATION
Reel/Frame 051691/0442 →