Semiconductor light-emitting element and light-emitting device

1. A semiconductor light-emitting element, comprising:

a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor;

a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, which have high reflectance relative to a light emitted by the active layer; and

a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction, which have low reflectance and high reflectance respectively relative to the light emitted by the active layer.

2. The semiconductor light-emitting element according to claim 1 ,

wherein the second direction is orthogonal to the first direction.

3. The semiconductor light-emitting element according to claim 1 ,

wherein a sectional area of the active layer in a plane orthogonal to the second direction is larger than the sectional area of the active layer in a plane orthogonal to the first direction.

4. The semiconductor light-emitting element according to claim 1 ,

wherein the laminated section has a shape in which a length of the laminated direction is longer than a length in the first direction and a length in the second direction.

5. The semiconductor light-emitting element according to claim 1 ,

wherein the first and second clad layers include a pair of third high-reflection layers which have high reflectance relative to the light emitted by the active layer.

6. The semiconductor light-emitting element according to claim 1 ,

wherein high reflectance of the first and second high-reflection layers are 80% or more relative to the light emitted by the active layer.

7. The semiconductor light-emitting element according to claim 1 ,

wherein reflectance of the low-reflection layer is 10% or less relative to the light emitted by the active layer.

8. The semiconductor light-emitting element according to claim 1 ,

wherein the laminated section has first and second contact layers which are formed on opposite sides of the first and second clad layers from the active layer,

first and second electrodes being provided to supply a current to the active layer via the first and second contact layers, and

at least one of the first and second electrodes being contacted with a surface parallel to the laminated direction of the laminated section at least one of the first and second contact layers.

9. The semiconductor light-emitting element according to claim 1 ,

wherein at least a portion of a side surface of the active layer is covered with a nitride-based insulator.

10. The semiconductor light-emitting element according to claim 9 ,

wherein the nitride-based insulator is a silicon nitride.

11. The semiconductor light-emitting element according to claim 1 ,

wherein the active layer is made of a nitride-based compound semiconductor.

12. A light-emitting device, comprising:

a mount substrate which has a heat sink; and

a semiconductor light-emitting element mounted on the heat sink,

the semiconductor light-emitting element comprising:

a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor;

a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, which have high reflectance relative to a light emitted by the active layer; and

a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction, which have low reflectance and high reflectance respectively relative to the light emitted by the active layer,

the laminated direction of the laminated section being in parallel to a surface of the heat sink on which the semiconductor light-emitting element is disposed.

13. The light-emitting device according to claim 12 , further comprising a fluorescent material formed around the active layer of the semiconductor light-emitting element.

14. The light-emitting device according to claim 12 , further comprising a light guiding plate, a reflection plate or a diffusion plate disposed around the active layer of the semiconductor light-emitting element.

15. The light-emitting device according to claim 12 ,

wherein a sectional area of the active layer in a plane orthogonal to the second direction is larger than the sectional area of the active layer in a plane orthogonal to the first direction.

16. The light-emitting device according to claim 12 ,

wherein the laminated section has a shape in which a length of the laminated direction is longer than a length in the first direction and a length in the second direction.

17. The light-emitting device according to claim 12 ,

wherein the first and second clad layers include a pair of third high-reflection layers which have high reflectance relative to the light emitted by the active layer.

18. The light-emitting device according to claim 12 ,

wherein the laminated section has first and second contact layers which are formed on opposite sides of the first and second clad layers from the active layer,

first and second electrodes being provided to supply a current to the active layer via the first and second contact layers, and

at least one of the first and second electrodes being contacted with a surface parallel to the laminated direction of the laminated section at least one of the first and second contact layers.

19. The light-emitting device according to claim 12 ,

wherein at least a portion of a side surface of the active layer is covered with a nitride-based insulator.