Semiconductor light emitting device
View Patent ↗A semiconductor light emitting device includes: a semiconductor light emitting element; a first phosphor which absorbs light emitted from the semiconductor light emitting element and emits first wavelength-converted light; and a second phosphor which absorbs light emitted from the semiconductor light emitting element and emits second wavelength-converted light. The first phosphor has a first excitation spectrum region where excitation intensity increases with increasing wavelength around a peak wavelength of the semiconductor light emitting element. The second phosphor has a second excitation spectrum region where excitation intensity is flat or decreases with respect to increasing wavelength around the peak wavelength of the semiconductor light emitting element.
1. A semiconductor light emitting device comprising:
a semiconductor light emitting element;
a first phosphor which absorbs light emitted from the semiconductor light emitting element and emits first wavelength-converted light, the first phosphor having a first excitation spectrum where excitation intensity is flat or decrease with increasing wavelength around a peak wavelength of the semiconductor light emitting element;
a second phosphor which absorbs light emitted from the semiconductor light emitting element and emits second wavelength-converted light, the second phosphor having a second excitation spectrum where excitation intensity increase with respect to increasing wavelength around the peak wavelength;
a third phosphor which absorbs light emitted from the semiconductor light emitting element and emits third wavelength-converted light, the third phosphor having a fourth excitation spectrum where excitation intensity is flat or decreases with increasing wavelength around the peak wavelength; and
a fourth phosphor which absorbs light emitted from the semiconductor light emitting element and emits fourth wavelength-converted light, the fourth phosphor having a fifth excitation spectrum where excitation intensity increases with respect to increasing wavelength around the peak wavelength,
wherein
the first excitation spectrum is different from the fourth excitation spectrum,
the second excitation spectrum is different from the fifth excitation spectrum,
excitation intensity resulting from mixing the first phosphor and the second phosphor has a sixth excitation spectrum region which is flat or increases with respect to increasing wavelength,
excitation intensity resulting from mixing the third phosphor and the fourth phosphor has a seventh excitation spectrum region which is flat or increases with respect to increasing wavelength,
the sixth excitation spectrum is different from the seventh excitation spectrum, and
an upper limit of the peak wavelength falls within both sixth and seventh excitation spectrum regions.
2. A semiconductor light emitting device comprising:
a semiconductor light emitting element;
a first phosphor which absorbs light emitted from the semiconductor light emitting element and emits first wavelength-converted light, the first phosphor having a first excitation spectrum where excitation intensity is flat or decrease with increasing wavelength around a peak wavelength of the semiconductor light emitting element;
a second phosphor which absorbs light emitted from the semiconductor light emitting element and emits second wavelength-converted light, the second phosphor having a second excitation spectrum where excitation intensity increase with respect to increasing wavelength around the peak wavelength;
a third phosphor which absorbs light emitted from the semiconductor light emitting element and emits third wavelength-converted light, the third phosphor having a fourth excitation spectrum where excitation intensity is flat or decreases with increasing wavelength around the peak wavelength; and
a fourth phosphor which absorbs light emitted from the semiconductor light emitting element and emits fourth wavelength-converted light, the fourth phosphor having a fifth excitation spectrum where excitation intensity increases with respect to increasing wavelength around the peak wavelength,
wherein
the first excitation spectrum is different from the fourth excitation spectrum,
the second excitation spectrum is different from the fifth excitation spectrum,
absorption intensity resulting from mixing the first phosphor and the second phosphor has a first absorption spectrum region which increases with wavelength,
absorption intensity resulting from mixing the third phosphor and the fourth phosphor has a second absorption spectrum region which increases with wavelength and differs from the first absorption region,
excitation intensity resulting from mixing the first phosphor and the second phosphor has an eighth excitation spectrum region which is flat with respect to wavelength,
excitation intensity resulting from mixing the third phosphor and the fourth phosphor has a ninth excitation spectrum region which is flat with respect to wavelength and different from the eighth excitation spectrum, and
an upper limit of the peak wavelength falls within both first and second absorption spectrum regions.
3. The semiconductor light emitting device according to claim 1 , wherein
the first phosphor and the third phosphor include at least one of silicate and oxynitride, respectively, and
the second phosphor and the fourth phosphor include at least one of a Ce-activated garnet structure, europium and samarium activated lanthanum oxysulfide, and europium-activated lanthanum oxysulfide, respectively.
4. The semiconductor light emitting device according to claim 3 , wherein
the silicate is expressed by a composition formula (Me 1-y Eu y ) 2 SiO 4 :Eu 2+ (where Me is at least one alkaline-earth metal element selected from Ba, Sr, Ca, Mg, and 0<y≦1), and
the Ce-activated garnet structure is expressed by a composition formula (Y,Gd) 3 (Al,Ga) 5 O 12 :Ce 3+ .
5. The semiconductor light emitting device according to claim 2 , wherein
the first phosphor and the third phosphor include at least one of silicate and oxynitride, respectively, and
the second phosphor and the fourth phosphor include at least one of a Ce-activated garnet structure, europium and samarium activated lanthanum oxysulfide, and europium-activated lanthanum oxysulfide, respectively.
6. The semiconductor light emitting device according to claim 5 , wherein
the silicate is expressed by a composition formula (Me 1-y Eu y ) 2 SiO 4 :Eu 2+ (where Me is at least one alkaline-earth metal element selected from Ba, Sr, Ca, Mg, and 0<y≦1), and
the Ce-activated garnet structure is expressed by a composition formula (Y,Gd) 3 (Al,Ga) 5 O 12 :Ce 3+ .
7. The semiconductor light emitting device according to claim 3 , wherein the peak wavelength of the semiconductor light emitting element is in a range from 440 to 490 nm.
8. The semiconductor light emitting device according to claim 5 , wherein the peak wavelength of the semiconductor light emitting element is in a range of 440 to 490 nm.