Nitride semiconductor light emitting device
View Patent ↗A nitride semiconductor light emitting device includes a laminate, first and second electrodes, a conductive layer, and a phosphor layer. The laminate includes a first layer including a first electroconductive-type layer, a second layer including a second electroconductive-type layer, a light emitting layer between the first and second layers, and a nitride semiconductor. The laminate has a recessed portion extending from the first layer to the second layer in a central portion or an outer peripheral portion. The first electrode arranged on the first layer reflects light emitted from the light emitting layer. The second electrode is surrounded by the light emitting layer or on the periphery thereof and connected to a bottom surface of the recessed portion. The conductive layer is arranged on a surface of the second layer at a side opposite to the light emitting layer. The phosphor layer overlies the second layer and the conductive layer.
1. A nitride semiconductor light emitting device, comprising:
a multi layered nitride semiconductor including a first layer of a first conductivity type, a second layer of a second conductivity type different from the first conductivity type, and a light emitting layer between the first layer and the second layer, wherein a recess extends inwardly of the first layer and the light emitting layer;
a first electrode contacting the first layer;
a second electrode contacting the second layer; and
a transparent conductive layer disposed on the second layer directly over the recess.
2. The nitride semiconductor light emitting device of claim 1 , wherein the second electrode extends inwardly of the recess and contacts a first surface of the second layer.
3. The nitride semiconductor light emitting device of claim 2 , wherein:
the second layer includes a second surface opposed to the location of the recess extending thereto; and
the transparent conductive layer is disposed on the second surface.
4. The nitride semiconductor light emitting device of claim 3 , wherein the transparent conductive layer terminates inwardly of the perimeter of the second surface.
5. The nitride semiconductor light emitting device of claim 3 , wherein the transparent conductive layer extends over the entire second surface.
6. The nitride semiconductor light emitting device of claim 1 , further including a light blocking material disposed at an outside of the first layer and the light emitting layer.
7. The nitride semiconductor light emitting device of claim 6 , wherein the light blocking material is an absorptive material or a reflective material.
8. The nitride semiconductor light emitting device of claim 3 , further including a grid electrode disposed over the second surface of the second layer.
9. A nitride semiconductor light emitting device, comprising:
a nitride semiconductor laminate including a first layer including a first electroconductive-type layer, a second layer including a second electroconductive-type layer, and a light emitting layer arranged between the first layer and the second layer, the laminate including a recessed portion extending from a surface of the first layer at a side opposite to the light emitting layer to a portion of the second layer in at least one of a central portion and an outer peripheral portion of the laminate;
a first electrode arranged on the surface of the first layer;
a second electrode surrounded by the light emitting layer or on the periphery of the light emitting layer and is arranged on a bottom surface of the recessed portion;
a conductive layer arranged on a surface of the second layer at a side opposite to the light emitting layer; and
a phosphor layer covering the surface of the second layer and the conductive layer.
10. The nitride semiconductor light emitting device according to claim 9 , wherein the conductive layer comprises at least one of a transparent electroconductive film and a mesh-shaped metal layer.
11. The nitride semiconductor light emitting device according to claim 9 , wherein the conductive layer terminates inwardly of the perimeter of the laminate.
12. The nitride semiconductor light emitting device according to claim 11 , wherein a second surface of the second layer is uneven.
13. A nitride semiconductor light emitting device, comprising:
a multi layered nitride semiconductor including a first layer of a first conductivity type, a second layer of a second conductivity type different from the first conductivity type, and a light emitting layer between the first layer and the second layer, wherein a recess extends inwardly of the first layer and the light emitting layer;
a first electrode contacting the first layer; and
a second electrode contacting the second layer and extends inwardly of the recess and contacts a first surface of the second layer, wherein:
the second layer includes a second surface opposed to the location of the recess extending thereto; and
a transparent conductive layer is disposed on the second surface directly over the recess.
14. The nitride semiconductor light emitting device of claim 13 , wherein the transparent conductive layer terminates inwardly of the perimeter of the second surface.
15. The nitride semiconductor light emitting device of claim 13 , wherein the transparent conductive layer extends over the entire second surface.
16. The nitride semiconductor light emitting device of claim 13 , further including a light blocking material disposed at an outside of the first layer and the light emitting layer.
17. The nitride semiconductor light emitting device of claim 16 , wherein the light blocking material is an absorptive material or a reflective material.
18. The nitride semiconductor light emitting device of claim 13 , further including a grid electrode disposed over the second surface of the second layer.