IP Library Granted Patent US 8,338,848
Granted Patent B2
US 8,338,848 · App. 13/214,725 · Granted Dec 25, 2012

LED structure

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,338,848
App. No.
13/214,725
Granted
Dec 25, 2012
Kind
B2
Abstract

A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

Claims (18)

1. A device comprising:

a first layer comprising a material of a first conductivity type;

an active layer overlying said first layer, said active layer generating light when holes and electrons recombine therein;

a second layer comprising a material of a second conductivity type, said second layer having a first surface overlying said active layer and a rough surface opposite to said first surface comprising features that scatter light striking said rough surface;

a layer of transparent electrically conducting material deposited on said rough second surface;

a first layer of a dielectric material that is transparent to said light generated by said active layer, said first layer having a first surface in contact with said layer of transparent electrically conducting material and a second surface; and

a reflective layer deposited on said second surface of said first dielectric layer, wherein said reflective layer has a reflectivity greater than 90%, and wherein said reflective layer would have a reflectivity less than 70% if deposited directly on said layer of transparent electrically conducting material;

further comprising a second layer of a dielectric material overlying said reflective layer, said reflective layer being encapsulated by said first and second layers of dielectric material.

2. A device comprising:

a first layer comprising a material of a first conductivity type;

an active layer overlying said first layer, said active layer generating light when holes and electrons recombine therein;

a second layer comprising a material of a second conductivity type, said second layer having a first surface overlying said active layer and a rough surface opposite to said first surface comprising features that scatter light striking said rough surface;

a layer of transparent electrically conducting material deposited on said rough second surface;

a first layer of a dielectric material that is transparent to said light generated by said active layer, said first layer having a first surface in contact with said layer of transparent electrically conducting material and a second surface; and

a reflective layer deposited on said second surface of said first dielectric layer, wherein said reflective layer has a reflectivity greater than 90%, and wherein said reflective layer would have a reflectivity less than 70% if deposited directly on said layer of transparent electrically conducting material;

wherein said reflective layer is connected to one of said first layer and said second layer by an electrically conducting via;

further comprising a contact layer overlying said reflective layer, said contact layer being connected to the other of said first layer and said second layer by an electrically conducting via;

wherein said electrically conducting via connecting said contact layer to the other of said first and second layers passes through an opening in said reflective layer.

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2020
From: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
To: SEOUL SEMICONDUCTOR CO., LTD.
Reel/Frame 052316/0044 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2020
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRONIC DEVICES AND STORAGE CORPORATION
Reel/Frame 051691/0442 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2014
From: TOSHIBA TECHNO CENTER INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 033265/0062 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2014
From: BRIDGELUX, INC.
To: TOSHIBA TECHNO CENTER INC.
Reel/Frame 033215/0097 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2014
From: HASNAIN, GHULAM; LESTER, STEVEN D.
To: BRIDGELUX, INC.
Reel/Frame 033215/0085 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2013
From: BRIDGELUX, INC.
To: TOSHIBA TECHNO CENTER INC.
Reel/Frame 030724/0395 →
RELEASE OF SECURITY INTEREST Recorded May 22, 2013
From: WHITE OAK GLOBAL ADVISORS, LLC, AS COLLATERAL AGENT
To: BRIDGELUX, INC.
Reel/Frame 030466/0093 →
SECURITY AGREEMENT Recorded Nov 12, 2012
From: BRIDGELUX, INC.
To: WHITE OAK GLOBAL ADVISORS, LLC, AS COLLATERAL AGENT
Reel/Frame 029281/0844 →