Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
View Patent ↗According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×10 20 cm −3 and not more than 3×10 20 cm −3 . The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×10 18 cm −3 .
1. A method for manufacturing a semiconductor light emitting device, comprising:
forming a light emitting layer including a nitride semiconductor on an n-type semiconductor layer including a nitride semiconductor;
forming a first film of Al x Ga 1-x N (0.05≦x≦0.2) on the light emitting layer, the first film including Mg;
forming a second film including a nitride semiconductor including Mg on the first film; and
forming a third film including a nitride semiconductor including Mg on the second film,
the forming of the first film including alternately and multiply repeating:
a first process of supplying a group V source-material gas, a gas including Ga, a gas including Al, and a gas including Mg; and
a second process of supplying the group V source-material gas without supplying the gas including Ga, the gas including Al, and the gas including Mg,
a maximum value of a concentration of Mg in a p-side region including the light emitting layer, the first film, and the second film being not less than 1×10 20 cm −3 and not more than 3×10 20 cm −3 ,
an Al concentration in the p-side region having a maximum value at a first position,
the Al concentration being 1/100 of the maximum value at a second position arranged with the first position along a first direction from the light emitting layer toward the first film in a region between the first position and a position corresponding to the light emitting layer,
a Mg concentration at the second position being not less than 2×10 18 cm −3 .
2. The method according to claim 1 , wherein a concentration profile of Mg in the p-side region includes:
a first portion;
a second portion provided between the first portion and the third film;
a third portion provided between the first portion and the second portion, a Mg concentration of the third portion increasing at a first increase rate along the first direction;
a fourth portion provided between the third portion and the second portion, a Mg concentration of the fourth portion increasing at a second increase rate along the first direction;
a fifth portion provided between the third portion and the fourth portion, a Mg concentration of the fifth portion increasing at a third increase rate along the first direction, the third increase rate being lower than the first increase rate and lower than the second increase rate;
a sixth portion provided between the fourth portion and the second portion, a Mg concentration of the sixth portion being not less than 1×10 20 cm −3 and not more than 3×10 20 cm −3 and being higher than the concentrations of Mg of the first portion, the second portion, the third portion, the fourth portion, and the fifth portion; and
a seventh portion provided between the sixth portion and the second portion, a Mg concentration of the seventh portion decreasing along the first direction.
3. The method according to claim 1 , wherein a concentration of C (carbon) in the p-side region is not more than 5×10 18 cm −3 .
4. The method according to claim 2 , wherein the Mg concentration at the second position is not more than 1.2×10 19 cm −3 .
5. The method according to claim 2 , wherein the Mg concentration of the fifth portion is not less than 1×10 19 cm −3 and not more than 3×10 19 cm −3 .
6. The method according to claim 2 , wherein a concentration of C (carbon) in the p-side region is not more than 5×10 18 cm −3 .
7. The method according to claim 2 , wherein a length of the fifth portion along the first direction is shorter than a length of the third portion along the first direction and shorter than a length of the fourth portion along the first direction.
8. The method according to claim 2 , wherein a length of the third portion along the first direction is not less than 5 nm and not more than 30 nm.
9. The method according to claim 2 , wherein a length of the fourth portion along the first direction is not less than 5 nm and not more than 30 nm.
10. The method according to claim 2 , wherein a length of the fifth portion along the first direction is not less than 3 nm and not more than 20 nm.
11. The method according to claim 2 , wherein a distance along the first direction between the first position and the second position is not less than 5 nm and not more than 30 nm.
12. The method according to claim 2 , wherein the Mg concentration at the fourth position is not more than 8×10 19 cm −3 .
13. The method according to claim 2 , wherein the second position is positioned inside the third portion.
14. The method according to claim 2 , wherein the second position is positioned inside the fifth portion.
15. The method according to claim 2 , wherein the second position is positioned inside the fourth portion.
16. The method according to claim 2 , wherein
the group V source-material gas includes NH 3 ,
the gas including Ga includes at least one of tri-methyl gallium and tri-ethyl gallium,
the gas including Al includes tri-methyl aluminum, and
the gas including Mg includes bis(cyclopentadienyl) magnesium.