Semiconductor light emitting device

1. A light emitting device, comprising:

a first layer of a first conductivity type and a second layer of a second conductivity type;

a light emitting layer between, in a first direction, the first and second layers,

a resin layer on a first surface of the first layer such that the first layer is between the resin layer and the second layer in the first direction, the first layer having an outer portion extending beyond the second layer and light emitting layers in a second direction perpendicular to the first direction to an outer edge of the first layer;

a first electrode contacting the first layer in the outer portion on a second surface opposite the first surface;

a second electrode contacting the second layer; and

a first insulating material contacting the first surface in the outer portion of the first layer and having a wall surface extending in the first direction from the first surface at a position that is in the outer portion and spaced in the second direction from the outer edge.

2. The light emitting device according to claim 1 , wherein the first insulating material extends in the second direction along the outer edge of the first layer from the first surface to the second surface.

3. The light emitting device according to claim 1 , wherein the first insulating material includes a fluorescent substance which absorbs light at a wavelength emitted by the light emitting layer and emits light at a wavelength different from the wavelength emitted by the light emitting layer.

4. The light emitting device according to claim 1 , further comprising:

a reflective material disposed on the first insulating material such that the wall surface is between the resin layer and the reflective material in the second direction, the reflective material being reflective of light at a wavelength of light emitted by the light emitting layer, wherein

the first insulating material transmits light at a wavelength emitted by the light emitting layer.

5. The light emitting device according to claim 1 , wherein the resin layer includes a fluorescent substance which absorbs light at a wavelength emitted by the light emitting layer and emits light at a wavelength different from the wavelength emitted by the light emitting layer.

6. The light emitting device according to claim 1 , further comprising:

a second insulating material between the resin layer and the first insulating material and having a refractive index at a wavelength of light emitted by the light emitting layer that is lower than a refractive index of the first insulating material at the wavelength of light emitted by the light emitting layer.

7. The light emitting device according to claim 1 , wherein

the resin layer includes a first fluorescent substance which absorbs light at a first wavelength emitted by the light emitting layer and emits light at a second wavelength different from the first wavelength, and

the first insulating material includes a second fluorescent substance which absorbs light at the first wavelength and emits light at a third wavelength different from the first wavelength.

8. The light emitting device according to claim 7 , further comprising:

a second insulating material between the resin layer and the first insulating material and having a refractive index that is lower than a refractive index of the first insulating material.

9. The light emitting device according to claim 7 , wherein the third wavelength is longer than the second wavelength.