Semiconductor light emitting device

1. A semiconductor light emitting device, comprising:

a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions;

a light emitting layer provided on the p-side region;

a second semiconductor layer provided on the light emitting layer;

a p-side electrode provided on the second semiconductor layer;

a plurality of n-side electrodes provided respectively on the plurality of n-side regions;

a first insulating film provided on the p-side electrode and on the plurality of n-side electrodes;

a p-side interconnect unit provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film;

a plurality of second vias provided respectively on the plurality of n-side electrodes and piercing the first insulating film; and

an n-side interconnect unit provided on the first insulating film to commonly connect to the plurality of n-side electrodes through the plurality of second vias,

wherein a bottom surface of the n-side interconnect unit is coplanar with a top surface of the first insulating film and with a to surface of each of the plurality of second vias, the plurality of n-side regions are separated from each other without being linked at the second surface, and the p-side region is provided around each of the n-side regions at the second surface.

2. The device according to claim 1 , wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface.

3. The device according to claim 1 , wherein

the p-side interconnect unit includes:

a p-side interconnect layer provided on the first insulating film; and

a p-type metal pillar provided on the p-side interconnect layer, the p-type metal pillar being thicker than the p-side interconnect layer, and

the n-side interconnect unit includes:

an n-side interconnect layer provided on the first insulating film; and

an n-side metal pillar provided on the n-side interconnect layer, the n-side metal pillar being thicker than the n-side interconnect layer.

4. The device according to claim 1 , further comprising a second insulating film provided between the p-side interconnect unit and the n-side interconnect unit.

5. The device according to claim 4 , wherein the second insulating film continuously covers a periphery of the p-side interconnect unit and a periphery of the n-side interconnect unit.

6. The device according to claim 3 , wherein the p-side interconnect layer comprises a first single-layer structure provided on the first insulating film, and the n-side interconnect layer comprises a second single-layer structure provided on the first insulating film.

7. A semiconductor light emitting device, comprising:

a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions;

a light emitting layer provided on the p-side region;

a second semiconductor layer provided on the light emitting layer;

a p-side electrode provided on the second semiconductor layer, the p-side electrode being reflective to light emitted by the light emitting layer;

a plurality of n-side electrodes provided respectively on the plurality of n-side regions;

an insulating film provided on the second semiconductor layer and being sandwiched between respective ones of the plurality of n-side electrodes; and

an n-side reflecting electrode having a plurality of n-side vias connected respectively to the plurality of n-side electrodes, and a linking portion provided on the insulating film and linking the plurality of n-side vias,

wherein a bottom surface of the linking portion is coplanar with a to surface of the insulating film and with a to surface of each of the plurality of n-side vias, a reflectance of the n-side reflecting electrode for the light emitted by the light emitting layer is higher than a reflectance of the n-side electrodes for the light emitted by the light emitting layer, and the n-side reflecting electrode is made of a same material as the p-side electrode.

8. The device according to claim 7 , wherein the p-side electrode and the n-side reflecting electrode include silver.

9. The device according to claim 7 , further comprising a transparent electrode provided on the second semiconductor layer.

10. The device according to claim 9 , wherein

the transparent electrode is provided between the p-side electrode and the second semiconductor layer, and is provided between the n-side reflecting electrode and the second semiconductor layer with the insulating film interposed, and

the transparent electrode provided between the p-side electrode and the second semiconductor layer is linked to the transparent electrode provided between the n-side reflecting electrode and the second semiconductor layer as a single body.

11. The device according to claim 10 , wherein a distance between the light emitting layer and the n-side reflecting electrode is ½ of a light emission wavelength of the light emitting layer.

12. The device according to claim 7 , wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface.

13. A semiconductor light emitting device, comprising:

a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions;

a light emitting layer provided on the p-side region;

a second semiconductor layer provided on the light emitting layer;

a p-side electrode provided on the second semiconductor layer, the p-side electrode being reflective to light emitted by the light emitting layer;

a plurality of n-side electrodes provided respectively on the plurality of n-side regions;

a first insulating film provided on the p-side electrode and on the plurality of n-side electrodes;

a p-side interconnect unit provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film;

a plurality of second vias provided respectively on the plurality of n-side electrodes and piercing the first insulating film; and

an n-side interconnect unit provided on the first insulating film to commonly connect to the plurality of n-side electrodes through the plurality of second vias,

wherein a bottom surface of the n-side interconnect unit is coplanar with a top surface of the first insulating film and with a to surface of each of the plurality of second vias, and the plurality of n-side regions are separated from each other without being linked at the second surface.

14. The device according to claim 13 , wherein

the p-side interconnect unit includes:

a p-side interconnect layer provided on the first insulating film; and

a p-type metal pillar provided on the p-side interconnect layer, the p-type metal pillar being thicker than the p-side interconnect layer, and

the n-side interconnect unit includes:

an n-side interconnect layer provided on the first insulating film; and

an n-side metal pillar provided on the n-side interconnect layer, the n-side metal pillar being thicker than the n-side interconnect layer.

15. The device according to claim 13 , further comprising a second insulating film provided between the p-side interconnect unit and the n-side interconnect unit.

16. The device according to claim 15 , wherein the second insulating film continuously covers a periphery of the p-side interconnect unit and a periphery of the n-side interconnect unit.

17. The device according to claim 13 , wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface.

18. The device according to claim 13 , wherein the p-side electrode includes silver.

19. The device according to claim 13 , wherein the p-side region is provided around each of the plurality of n-side electrodes.

20. The device according to claim 13 , wherein a distance between the light emitting layer and the p-side electrode is ½ of a light emission wavelength of the light emitting layer.