Nitride semiconductor light-emitting element
View Patent ↗According to one embodiment, a nitride-semiconductor light-emitting element includes a laminated body, a pair of two transparent conductive layers, a current-blocking layer, a first electrode, and a second electrode. The laminated body includes a nitride semiconductor, a first layer including a first conductivity-type layer, a second layer including a second conductivity-type layer, and a light-emitting layer sandwiched between the first layer and the second layer. The two transparent conductive layers are laterally separated from each other by a prescribed region. The prescribed region is a portion of a surface of the first layer. The current-blocking layer covers respective surfaces of the two transparent conductive layers.
1. A nitride-semiconductor light-emitting element, the element comprising:
a laminated body made up of nitride semiconductors, the laminated body including a first layer including a first conductivity-type layer, a second layer including a second conductivity-type layer, and a light emitting layer sandwiched between the first layer and the second layer;
a first electrode including a plurality of connections, the plurality of connections being provided inside the laminated body so as to extend to a portion of the second layer from a surface of the first layer, the plurality of connections protruding into the second layer at a prescribed height and being separated from one another by equal distances so that six of the connections are located at respective corners of a regular hexagon and one connection is located at a center of the hexagon; and
a second electrode provided on the first layer.
2. The element according to claim 1 , further comprising an insulating film to insulate the first electrode and the second electrode from each other, a portion of the insulating film being provided between each of the plurality of connections and the laminated body.
3. The element according to claim 1 , wherein
the light-emitting layer has a multiple quantum well structure including undoped well layers and second conductivity-type barrier layers.
4. The element according to claim 1 , wherein
a surface of the second layer includes a concavoconvex portion.
5. The element according to claim 1 , further comprising a conductive support to support the laminated body on a side of the first electrode.
6. The element according to claim 1 , wherein
the second electrode is a metal electrode to reflect light emitted from the light-emitting layer.