Semiconductor light emitting device
View Patent ↗A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.
1. A semiconductor light emitting device, comprising:
a first lead;
a second lead;
a first semiconductor light emitting element mounted on the first lead, said first semiconductor light emitting element being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element;
a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength of no less than 550 nm;
an ultraviolet light absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and
a sealing resin configured to cover the ultraviolet light absorbing layer, the first semiconductor light emitting element, and the second semiconductor light emitting element,
wherein the ultraviolet light absorbing layer includes at least one of cyanoacrylate, benzotriazol, salicylate, and benzophenone.
2. A semiconductor light emitting device of claim 1 , wherein the sealing resin is lower in hardness than the ultraviolet light absorbing layer.
3. A semiconductor light emitting device of claim 1 , wherein a peak wavelength of light emitted from the first semiconductor light emitting element and the second light emitting element is in visible light band.
4. A semiconductor light emitting device of claim 1 , wherein the ultraviolet light absorbing layer has no less than about 20 μm and no more than about 1 mm in thickness.
5. A semiconductor light emitting device of claim 1 , wherein the ultraviolet light absorbing layer includes cyanoacrylate.
6. A semiconductor light emitting device of claim 1 , wherein the ultraviolet light absorbing layer includes benzotriazol.
7. A semiconductor light emitting device of claim 1 , wherein the ultraviolet light absorbing layer includes salicylate.
8. A semiconductor light emitting device of claim 1 , wherein the ultraviolet light absorbing layer includes benzophenone.
9. A semiconductor light emitting device of claim 1 , further comprising: a package having a cup shaped portion on a upper surface of the package, wherein the first semiconductor light emitting element, the second semiconductor light emitting element, a part of the first lead, and a part of the second lead are provided in a bottom surface of the cup shaped portion, and the ultraviolet light absorbing layer is provided on the first lead in the cup shaped portion.
10. A semiconductor light emitting device of claim 9 , wherein the ultraviolet light absorbing layer is provided on the second lead in the cup shaped portion.
11. A semiconductor light emitting device of claim 9 , wherein the ultraviolet light absorbing layer is provided on a surface of the cup shaped portion of the package.
12. A semiconductor light emitting device of claim 11 , wherein an upper edge of the ultraviolet light absorbing layer provided on the surface of the cup shaped portion of the package is provided higher than an upper surface of the first semiconductor light emitting element.
13. A semiconductor light emitting device of claim 12 , wherein the sealing resin is lower in hardness than the ultraviolet light absorbing layer.
14. A semiconductor light emitting device, comprising:
a first lead;
a second lead;
a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element;
a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm from a light extraction surface of the second semiconductor light emitting element;
an ultraviolet light absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element and the light extraction surface of the second semiconductor light emitting element; and
a sealing resin configured to cover the ultraviolet light absorbing layer, the first semiconductor light emitting element and the second semiconductor light emitting element,
wherein the ultraviolet light absorbing layer includes at least one of cyanoacrylate, benzotriazol, salicylate, and benzophenone.
15. A semiconductor light emitting device of claim 14 , wherein the sealing resin is lower in hardness than the ultraviolet light absorbing layer.
16. A semiconductor light emitting device of claim 14 , wherein a peak wavelength of light emitted from the first semiconductor light emitting element and the second light emitting element is in visible light band.
17. A semiconductor light emitting device of claim 14 , wherein the ultraviolet light absorbing layer has no less than about 20 μM and no more than about 1 mm in thickness.
18. A semiconductor light emitting device of claim 14 , wherein the ultraviolet light absorbing layer includes cyanoacrylate.
19. A semiconductor light emitting device of claim 14 , wherein the ultraviolet light absorbing layer includes benzotriazol.
20. A semiconductor light emitting device of claim 14 , wherein the ultraviolet light absorbing layer includes salicylate.
21. A semiconductor light emitting device of claim 14 , wherein the ultraviolet light absorbing layer includes benzophenone.
22. A semiconductor light emitting device of claim 14 , further comprising a package having a cup shaped portion on a upper surface of the package, wherein the first semiconductor light emitting element, the second semiconductor light emitting element, a part of the first lead and a part of the second lead are provided in a bottom surface of the cup shaped portion, and the ultraviolet light absorbing layer is provided on the first lead in the cup shaped portion.
23. A semiconductor light emitting device of claim 22 , wherein the ultraviolet light absorbing layer is provided on the second lead in the cup shaped portion.
24. A semiconductor light emitting device of claim 23 , wherein the ultraviolet light absorbing layer is provided on a surface of the cup shaped portion of the package.
25. A semiconductor light emitting device of claim 24 , wherein an upper edge of the ultraviolet light absorbing layer provided on the surface of the cup shaped portion of the package is provided higher than an upper surface of the first semiconductor light emitting element.
26. A semiconductor light emitting device of claim 22 , wherein the ultraviolet light absorbing layer is provided on a surface of the cup shaped portion of the package.
27. A semiconductor light emitting device of claim 26 , wherein an upper edge of the ultraviolet light absorbing layer provided on the surface of the cup shaped portion of the package is provided higher than an upper surface of the first semiconductor light emitting element.
28. A semiconductor light emitting device of claim 27 , wherein the sealing resin is lower in hardness than the ultraviolet light absorbing layer.