Semiconductor light emitting device and method for manufacturing same

1. A semiconductor light emitting device, comprising:

not less than three chips, each of the chips including a semiconductor layer having a first face, a second face formed on a side opposite to the first face, and a light emitting layer, a p-side electrode provided on the second face in a region having the light emitting layer, and an n-side electrode provided on the second face in a region without having the light emitting layer;

a resin layer provided on the first faces of the chips;

a first insulating layer provided on the second face side and having a first via leading to the p-side electrode, a second via leading to the n-side electrode, and a interconnect face formed on a side opposite to the first face; and

a second insulating layer provided on the interconnect face side of the first insulating layer,

each of the chips including an interconnect part including:

p-side interconnect part provided on the interconnect face on the first insulating layer and being electrically connected to the p-side electrode through the first via; and

a n-side interconnect part provided on the interconnect face and being electrically connected to the n-side electrode through the second via;

the second insulating layer integrally provided between the p-side interconnect part and the n-side interconnect part of each of the chips around the interconnect part of each of the chips, and between adjacent the interconnect part of the chips; and

the resin layer including:

a first resin layer including a first phosphor particle and provided on the first face side of one of the chips; and

a second resin layer including a second phosphor particle being different from the first phosphor particle, the second resin layer provided on the first face side of another of the chips.

2. The device according to claim 1 , wherein the first insulating layer covers a side face continuing from the first face of the chip.

3. The device according to claim 1 , wherein

the p-side interconnect part has

a p-side interconnect layer provided within the first via and on the interconnect face and

a p-side metal pillar which is provided on the p-side interconnect layer and has a thickness larger than the thickness of the p-side interconnect layer, and

the n-side interconnect part has

an n-side interconnect layer provided within the second via and on the interconnect face and

n-side metal pillar which is provided on the n-side interconnect layer and has a thickness larger than the thickness of then-side interconnect layer.

4. The device according to claim 1 , wherein a cross-section shape of the resin layer is an inverted trapezoid.

5. The device according to claim 1 , wherein the n-side interconnect part overlaps the first insulating layer on the region having the light emitting layer.

6. The device according to claim 1 , wherein

an upper surface of the first resin layer is coplanar with an upper surface of the second resin layer, and

a side surface of the resin layer is coplanar with a side surface of the second insulating layer.

7. The device according to claim 1 , wherein the first face of the semiconductor layer has a minute unevenness.

8. The device according to claim 1 , wherein

the chips includes a first chip and a second chip arranged adjacently to each other,

a side surface of the first resin layer provided on the first chip has an acute angle with respect to the first face, and

a side surface of the second resin layer provided on the second chip as an obtuse angle with respect to the first face.

9. The device according to claim 1 , wherein

the resin layer is provided on the first face side without a substrate between the resin layer and the chips,

the p-side interconnect part includes a p-side extraction electrode,

the n-side interconnect part includes an n-side extraction electrode, and

the p-side extraction electrode and the n-side extraction electrode are not bonded to a mounting member.