IP Library Granted Patent US 8,294,165
Granted Patent B2
US 8,294,165 · App. 11/668,218 · Granted Oct 23, 2012

Semiconductor light-emitting device

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Quick Facts
Patent No.
US 8,294,165
App. No.
11/668,218
Granted
Oct 23, 2012
Kind
B2
Abstract

A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

Claims (19)

1. A light-emitting device comprising:

a substrate having a plane surface;

a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light;

laminated structure which covers the semiconductor light-emitting element and contacts the plane surface of the substrate, the structure having a radius R 1 and a height R 2 , where R 1 and R 2 satisfy ½(R 1 )<R 2 < 2 R 1 , the laminated structure comprising:

a first light transmissible layer;

a phosphor layer which covers the first light transmissible layer, the phosphor layer contacting with the plane surface of the substrate and containing phosphor particles and matrix, a surface of the phosphor layer having unevenness reflecting shapes of the phosphor particles, the phosphor particles having a diameter ranging from 45 μm to 70 μm; and

a second light transmissible layer which covers the phosphor layer and contacting with the plane surface of the substrate,

wherein the phosphor particles are contained in the phosphor layer at a concentration of 20 wt % or more.

2. The light-emitting device according to claim 1 , wherein the phosphor layer has a cross-section perpendicular to the plane surface of the substrate, a shape of an inner periphery of the cross-section being either semi-arc-shaped, parabola-shaped, or U-shaped, or cornered-shaped having at least two straight lines.

3. The light-emitting device according to claim 1 , wherein the first light transmissible layer has a cross-section perpendicular to the plane surface of the substrate, a shape of an outer periphery of the cross-section being either semi-arc-shaped, parabola-shaped, or U-shaped, or cornered-shaped having at least two straight lines.

4. The light-emitting device according to claim 1 , wherein the second light transmissible layer has a cross-section perpendicular to the plane surface of the substrate, a shape of an outer periphery of the cross-section being either semi-arc-shaped, parabola-shaped, or U-shaped, or cornered-shaped having at least two straight lines.

5. The light-emitting device according to claim 1 , further comprising at least one another phosphor layer adjacent to the phosphor layer or inside of the first light transmissible layer or outside of the second light transmissible layer, the phosphor particles contained in respective phosphor layers being different in at least one of kind and concentration.

6. The light-emitting device according to claim 1 , further comprising a third light transmissible layer above the second light transmissible layer, a refractive index of the third light transmissible layer being different from that of the second light transmissible layer.

7. The light-emitting device according to claim 1 , further comprising at least one another phosphor layer between the first and second light transmissible layers, and a third light transmissible layer being sandwiched between adjacent phosphor layers.

8. The light-emitting device according to claim 1 , wherein an edge of the second light transmissible layer coincides with an outline of the substrate.

9. The light-emitting device according to claim 1 , wherein the unevenness occurs at a top part of the phosphor layer.

10. The light-emitting device according to claim 1 , wherein the matrix is a resin.

11. The light-emitting device according to claim 10 , wherein a reduced trailing of the resin occurs in a trailing part of the phosphor layer.

12. The light-emitting device according to claim 1 , wherein the second light transmissible layer is in contact with air.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2020
From: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
To: SEOUL SEMICONDUCTOR CO., LTD.
Reel/Frame 052316/0044 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2020
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRONIC DEVICES AND STORAGE CORPORATION
Reel/Frame 051691/0442 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2007
From: HATTORI, YASUSHI; NUNOUE, SHINYA; HATAKOSHI, GENICHI; SAITO, SHINJI; SHIDA, NAOMI; YAMAMOTO, MASAHIRO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 018818/0597 →