Semiconductor light-emitting device and method for manufacturing same

1. A semiconductor light-emitting device comprising:

a substrate having a C-surface;

an n-type semiconductor layer provided on the C-surface and including a nitride semiconductor;

a p-type semiconductor layer including a nitride semiconductor;

a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including:

a barrier layer including In b Ga l-b N (0≦b<1) and having a layer thickness t b (nanometers); and

a well layer stacked with the barrier layer, including In w Ga l-w N (0<w<1, b<w), and having a layer thickness t W (nanometers); and

a stacked body provided between the light-emitting portion and the n-type semiconductor layer and including:

a first layer including In x Ga l-x N (0≦x<1) and having a layer thickness t x (nanometers); and

a second layer stacked with the first layer, including In y Ga l-y N (0<y<1, x<y<w), and having a layer thickness t y (nanometers),

an average In composition ratio of the stacked body being higher than 0.4 times and not higher than 0.7 times an average In composition ratio of the light-emitting portion, assuming that the average In composition ratio of the light-emitting portion is (w×t w +b×t b )/(t w +t b ), and the average In composition ratio of the stacked body is (x×t x +y×t y )/(t x +t y ), and

the layer thickness t b of the barrier layer being 10 nanometers or less,

a thickness of the stacked body being equal to or greater than a thickness of the light-emitting portion,

a thickness of the first layer being thicker than 1 nanometer and thinner than 3nanometers,

a thickness of the second layer being thicker than 0 nanometer and thinner than 2 nanometers.

2. The device according to claim 1 , wherein

the first layer is provided in a plurality,

the second layer is provided in a plurality, and

the plurality of first layers and the plurality of second layers are alternately stacked.

3. The device according to claim 1 , wherein

the barrier layer is provided in a plurality, and the plurality of barrier layers are stacked with each other, and

the well layer is provided in a plurality, and each of the plurality of well layers is located between the plurality of barrier layers.

4. The device according to claim 1 , wherein the barrier layer containing In has an In composition ratio lower than an In composition ratio of the well layer.

5. The device according to claim 1 , wherein the second layer has an In composition ratio higher than an In composition ratio of the first layer.

6. The device according to claim 1 , wherein the second layer has an In composition ratio lower than an In composition ratio of the well layer.

7. The device according to claim 1 , wherein the first layer has an In composition ratio lower than an In composition ratio of the well layer.

8. The device according to claim 1 , wherein

the first layer is provided in a plurality,

the second layer is provided in a plurality, and

the plurality of first layers and the plurality of second layers are alternately stacked.

9. The device according to claim 1 , wherein

the barrier layer is provided in a plurality, and the plurality of barrier layers are stacked with each other, and

the well layer is provided in a plurality, and each of the plurality of well layers is located between the plurality of barrier layers.

10. The device according to claim 1 , wherein the n-type semiconductor layer grows along the c-axis.

11. The device according to claim 1 , wherein the thickness t b of the barrier layer is 5 nanometers or less.

12. A method for manufacturing a semiconductor light-emitting device, comprising:

forming an n-type semiconductor layer including a nitride semiconductor on a C-surface of a substrate;

forming a stacked body including a first layer and a second layer on the n-type semiconductor layer;

forming a light-emitting portion including a barrier layer and a well layer on the stacked body; and

forming a p-type semiconductor layer on the light-emitting portion,

the forming the stacked body including:

forming the first layer including In x Ga l-x N (0≦x<1) with a thickness of layer thickness t x nanometers on the n-type semiconductor layer; and

forming the second layer including In y Ga l-y N (0≦y<1, x<y) with a thickness of layer thickness t y nanometers on the first layer, the forming the light-emitting portion including:

forming the barrier layer including In b Ga l-b N (0≦b<1, b<w) with a layer thickness t b nanometers having a value of 10 nanometers or less on the stacked body; and

forming the well layer including In w Ga l-w N (0<w<1, y<w) with a thickness of layer thickness t, nanometers on the barrier layer,

at least one of the forming the stacked body and the forming the light-emitting portion being performed so that an average In composition ratio of the stacked body is higher than 0.4 times and not higher than 0.7 times an average In composition ratio of the light-emitting portion, a thickness of the stacked body being equal to or greater than a thickness of the light-emitting portion, a thickness of the first layer being thicker than 1 nanometer and thinner than 3 nanometers, and a thickness of the second layer being thicker than 0 nanometer and thinner than 2 nanometers,

assuming that the average In composition ratio of the stacked body is (x×t x +y×t y )/(t x +t y ), and the average In composition ratio of the light-emitting portion is (w×t x +b×t b )/(t w +t b ).

13. The method according to claim 12 , wherein

the first layer is provided in a plurality,

the second layer is provided in a plurality, and

the plurality of first layers and the plurality of second layers are alternately stacked.

14. The method according to claim 12 , wherein

the barrier layer is provided in a plurality, and the plurality of barrier layers are stacked with each other, and

the well layer is provided in a plurality, and each of the plurality of well layers is located between the plurality of barrier layers.