Semiconductor light emitting device and method for manufacturing same
View Patent ↗A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.
1. A semiconductor light emitting device comprising:
a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and
a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer,
wherein the first electrode includes: a first region provided on the first semiconductor layer and including a first metal film that is in direct contact with the first semiconductor layer; and a second region provided on the first semiconductor layer and including a second metal film that is in direct contact with the first semiconductor layer, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film, and
wherein the second electrode includes: a third metal film that is in direct contact with the second semiconductor layer; and a fourth metal film that is in direct contact with the second semiconductor layer, the fourth metal film having a lower reflectivity for the light emitted from the light emitting layer than the third metal film.
2. The device according to claim 1 , wherein the first region comprises a portion of the first electrode facing the second electrode.
3. The device according to claim 1 , wherein the third metal film of the second electrode is made of the same metal as the second film.
4. The device according to claim 1 , further comprising:
a first transparent conductive film provided between the first semiconductor layer and the second metal film.
5. The device according to claim 3 , further comprising:
a second transparent conductive film provided between the second semiconductor layer and the third metal film.
6. The device according to claim 1 , wherein the laminated body includes a substrate of sapphire on the side of a second major surface opposite to the first major surface.
7. The device according to claim 6 , wherein the first semiconductor layer, the light emitting layer, and the second semiconductor layer are formed on the substrate via a single-crystal aluminum nitride layer.
8. The device according to claim 7 , wherein the aluminum nitride layer includes a portion having a relatively high carbon concentration on the substrate side.
9. The device according to claim 1 , further comprising:
a first pad covering entirely the second metal film and part of the first metal film.
10. The device according to claim 1 , further comprising: a second pad covering at least part of the fourth metal film.
11. The device according to claim 1 , further comprising: a fifth metal film provided between the third metal film and the fourth metal film.