Semiconductor light emitting element and light emitting device
View Patent ↗A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately. The stacked body is aligned with the first substrate. The stacked body includes first and second semiconductor layers and a light emitting layer. The electrode is electrically connected to the first semiconductor layer. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face.
1. A semiconductor light emitting element, comprising:
a first substrate having a first face and a first side face, the first face being parallel to a first direction and a second direction perpendicular to the first direction, the first side face intersecting the first direction and extending in the second direction, the first substrate including a plurality of conductive portions and a plurality of insulating portions arranged alternately in the first direction over the first face, each of the conductive portions and each of the insulating portions extending in the second direction and also extending in a third direction perpendicular to the first face;
a stacked body aligned with the first substrate in the third direction intersecting with the first direction and the second direction, the stacked body including a first semiconductor layer and a second semiconductor layer and a light emitting layer, the first semiconductor layer having a second side face intersecting the first direction, the first semiconductor layer being of a first conductivity type, the second semiconductor layer being provided between the first semiconductor layer and the first face, the second semiconductor layer being of a second conductivity type, the light emitting layer being provided between the first semiconductor layer and the second semiconductor layer;
an electrode electrically connected to the first semiconductor layer, the electrode covering at least a portion of the second side face; and
a conductive layer provided between the second semiconductor layer and the first substrate, the conductive layer being electrically connected to at least one of the conductive portions and the second semiconductor layer,
at least one of the insulating portions being disposed between the first side face and a portion of the conductive layer nearest to the first side face,
wherein the first face includes a first region electrically connected to the first semiconductor layer, and a second region electrically connected to the second semiconductor layer, and a distance between centers of each of the insulating portions in the first direction is not more than a distance between the first region and the second region in the first direction.
2. The element according to claim 1 , wherein the conductive layer is electrically insulated from the first side face by the at least one of the insulating portions.
3. The element according to claim 1 , wherein a width of each of the insulating portions in the first direction is not less than 1 μm and not more than 10 μm, and a distance between centers of each of the insulating portions in the first direction is not less than 2 μm and not more than 30 μm.
4. The element according to claim 1 , wherein the first semiconductor layer includes a second face on the opposite side to the light emitting layer, the electrode includes a first extending part and a second extending part, the first extending part covers at least a portion of the second side face, the second extending part covers a portion of the second face, the second extending part extends in an extension direction parallel to the first face, and a width of the second extending part in a direction perpendicular to the extension direction is not more than 20 μm.
5. The element according to claim 4 , wherein an area of the second extending part is not less than 1% and not more than 30% of an area of the second face.
6. The element according to claim 1 , wherein a width of the first semiconductor layer in the first direction reduces in a direction from the first substrate towards the stacked body.
7. The element according to claim 1 , wherein the first substrate includes: a plurality of first metal portions each provided at one end of each of the conductive portions in the third direction; and a plurality of second metal portions each provided at the other end of each of the conductive portions in the third direction.
8. The element according to claim 7 , wherein an electrical conductivity of each of the first metal portions is higher than an electrical conductivity of each of the conductive portions, and an electrical conductivity of each of the second metal portions is higher than the electrical conductivity of each of the conductive portions.