Semiconductor light emitting element

1. A light emitting element, comprising:

a first semiconductor layer of a first conductive type and having a first side and a second side opposite the first side;

a second semiconductor layer of a second conductive type on the first side of the first semiconductor layer;

a light emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode layer contacting the second semiconductor layer, the second semiconductor layer being between first electrode layer and the light emitting layer;

a second electrode layer contacting the first semiconductor layer on the first side along a first part of a surface of the first semiconductor layer;

an insulation layer between the first electrode layer and the second electrode layer, contacting a second part of the surface of the first semiconductor layer, and being between the second semiconductor layer and the second electrode layer, the second part of the surface surrounding the first part of the surface; and

a first metal layer between a substrate and the insulation layer and between the substrate and the second electrode layer, wherein

the second electrode layer includes a first portion contacting the first part of the surface of the first semiconductor layer, and a second portion adjacent to first portion in a direction parallel to the surface,

the second portion being spaced from the surface of the first semiconductor layer in a direction perpendicular to the surface, and

a thickness of the first metal layer between the substrate and the first portion of the second electrode layer is greater than a thickness of the first metal layer between the substrate and the second portion of the second electrode layer and the substrate.

2. The light emitting element according to claim 1 , wherein the first metal layer includes at least one of tin, indium and bismuth.

3. The light emitting element according to claim 1 , wherein the second electrode layer contacts the first semiconductor layer in a plurality of regions spaced from each other in the direction parallel to the surface of the first semiconductor layer.

4. The light emitting element according to claim 1 , further comprising:

a spacer between the first semiconductor layer and the second portion of the second electrode layer.

5. The light emitting element according to claim 4 , wherein the spacer comprises at least one of silicon oxide or silicon nitride.

6. The light emitting element according to claim 4 , wherein a thickness of the spacer is between 0.9 to 1.1 times as large as a thickness of the insulation layer in the direction perpendicular to the surface of the first semiconductor layer.

7. The light emitting element according to claim 4 , wherein the spacer includes:

a first layer including a material included in the first semiconductor layer; and

a second layer between the first layer and the second electrode layer and includes a material included in the insulation layer.

8. The light emitting element according to claim 4 , wherein a plurality of spacers is periodically disposed.

9. The light emitting element according to claim 8 , wherein the each spacer in the plurality of spacers has an annular shape.

10. The light emitting element according to claim 8 , wherein the each spacer in the plurality of spacers is respectively disposed at a vertex of an equilateral triangle.

11. The light emitting element according to claim 8 , further comprising:

a second metal layer between the insulation layer and the first metal layer and between the second electrode layer and the first metal layer.

12. The light emitting element according to claim 11 , wherein a distance between each two spacers arranged adjacent to each other among the plurality of spacers is 1.5 to 3.5 times as large as a combined total of a thickness of the second electrode layer and a thickness of the second metal layer, each in the direction perpendicular to the surface of the first semiconductor layer and measured at the first part of the surface.

13. The light emitting element according to claim 4 , wherein the spacer has a plurality of openings.

14. The light emitting element according to claim 1 , wherein

the first metal layer includes at least one of an alloy of a first metal and a second metal, and an intermetallic compound of the first metal and the second metal,

the first metal includes at least one of tin, indium, and bismuth, and

the second metal includes at least one of nickel, cobalt, copper, and gold.

15. The light emitting element according to claim 1 , wherein the first electrode layer is covered with a protective electrode layer.

16. A light emitting device, comprising:

a first semiconductor layer of a first conductive type and having a first side and a second side opposite the first side;

a second semiconductor layer of a second conductive type on the first side of the first semiconductor layer;

a light emitting layer between a first region of the first semiconductor layer and the second semiconductor layer in a first direction;

a first electrode layer on the second semiconductor layer, the second semiconductor layer being between the first electrode layer and the light emitting layer in the first direction;

a second electrode layer on the first side of the first semiconductor layer and having a first portion contacting a second region of the first semiconductor layer, the second region being adjacent to the first region in a second direction perpendicular to the first direction;

a spacer material between the second region of the first semiconductor layer and a second portion of the second electrode layer; and

an insulation layer between the first electrode layer and the second electrode layer and between the second semiconductor layer and the second electrode layer.

17. The light emitting device according to claim 16 , wherein the spacer material is an insulating material.

18. The light emitting device according to claim 16 , wherein the spacer material is in a grid pattern on the second region of the first semiconductor layer.

19. A light emitting device, comprising:

a first semiconductor layer of a first conductive type and having a first side and a second side opposite the first side;

a second semiconductor layer of a second conductive type on the first side of the first semiconductor layer;

a light emitting layer between a first region of the first semiconductor layer and the second semiconductor layer in a first direction;

a first electrode layer on the second semiconductor layer, the second semiconductor layer being between the first electrode layer and the light emitting layer in the first direction;

a second electrode layer on the first side of the first semiconductor layer and having a first portion contacting a second region of the first semiconductor layer, the second region being adjacent to the first region in a second direction perpendicular to the first direction;

a spacer material between the second region of the first semiconductor layer and a second portion of the second electrode layer;

an insulation layer between the first electrode layer and the second electrode layer and between the second semiconductor layer and the second electrode layer; and

a first metal layer between a substrate and the insulation layer and between the substrate and the second electrode layer, wherein

a thickness, in the first direction, of the first metal layer between the substrate in and the first portion of the second electrode layer is greater than a thickness, in the first direction, of the first metal layer between the substrate and the second portion of the second electrode layer.

20. The light emitting device according to claim 19 , wherein the first metal layer includes at least one of tin, indium and bismuth.