Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device
A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.
1. A method for fabricating an electrode, comprising:
depositing a palladium film on a p-type nitride semiconductor layer;
introducing an oxygen gas onto the palladium film to provide an oxygen ambient;
oxidizing the palladium film adjacent to the nitride semiconductor layer by annealing the palladium film in the oxygen ambient; and
forming a palladium oxide film between the nitride semiconductor layer and the palladium film, and directly in contact with the nitride semiconductor layer.
2. The method of claim 1 , wherein the annealing is executed in a temperature range from about 200° C. to about 400° C.
3. The method of claim 1 , further comprising:
depositing a platinum film on the palladium film before the annealing.
4. The method of claim 1 , further comprising:
sequentially depositing a nickel film and a gold film on the palladium film before the annealing.
5. The method of claim 1 , wherein the palladium oxide film includes a platinum sulfide structure type palladium oxide crystal.
6. The method of claim 5 , wherein a percentage content of the platinum sulfide structure type palladium oxide crystal included in the palladium oxide film is not less than about 50%.
7. A method for manufacturing a semiconductor device, comprising:
growing an epitaxial growth layer including a light-emitting layer on a substrate, and a p-type nitride contact layer on the epitaxial growth layer;
depositing a palladium film on the nitride contact layer;
introducing an oxygen gas onto the palladium film to provide an oxygen ambient;
oxidizing the palladium film adjacent to the nitride contact layer by annealing the palladium film in the oxygen ambient; and
forming a palladium oxide film between the nitride contact layer and the palladium film, and directly in contact with the nitride contact layer.
8. The method of claim 7 , wherein the annealing is executed in a temperature range from about 200° C. to about 400° C.
9. The method of claim 7 , further comprising:
depositing a platinum film on the palladium film before the annealing.
10. The method of claim 7 , further comprising:
sequentially depositing a nickel film and a gold film on the palladium film before the annealing.
11. The method of claim 7 , wherein the palladium oxide film includes a platinum sulfide structure type palladium oxide crystal.
12. The method of claim 11 , wherein a percentage content of the platinum sulfide structure type palladium oxide crystal included in the palladium oxide film is not less than about 50%.