Semiconductor light emitting device and method for manufacturing same
View Patent ↗A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
1. A semiconductor light emitting device, comprising:
a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface;
a first electrode provided on the first major surface;
a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode;
a second electrode provided on the second major surface;
a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode; and
a dielectric film is disposed between the substrate and the first electrode, and the substrate and the second electrode,
wherein the semiconductor light emitting element is mounted on the upper surface of the protrusion.
2. The device according to claim 1 , further comprising a fluorescent material provided above the first major surface and provided above the semiconductor light emitting element via a gap.
3. The device according to claim 2 , wherein a reinforcing film is provided between the gap and the fluorescent material, the reinforcing film being dielectric and transparent to a light emitted by the semiconductor light emitting element.
4. The device according to claim 1 , wherein the semiconductor light emitting element is mounted on an upper surface of the protrusion.
5. The device according to claim 1 , wherein a surface area of an upper surface of the protrusion of the substrate is larger than a surface area of a bottom surface of the recess of the substrate.
6. The device according to claim 1 , wherein an anti-reflection coating is provided on a surface of the semiconductor light emitting element.
7. The device according to claim 1 , wherein the first electrode is provided also on a side surface of the protrusion and connected to the through-electrode.