Semiconductor device
View Patent ↗A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
1. A semiconductor device, comprising
an active region which comprises a single or multiple quantum well structure having a quantum well having In x1 Ga 1-x1 N (0<x1≦1) and a barrier region having In x 2Ga 1-x2 N (0≦x2 <1, x1>x2);
a first semiconductor region which comprises a GaN-based compound semiconductor containing a p-type impurity;
a first region having In 1-x-y1 Ga x Al y1 N (0≦x<1 ,0<y1≦1), disposed between the active region and the first semiconductor region;
a second semiconductor region which comprises a GaN-based compound semiconductor containing a p-type impurity, which is disposed either between the active region and the first region or between the first region and the first semiconductor region; and
a second region having a GaN-based nitride region containing In, disposed between the first semiconductor region and the active region,
a band gap of the second region being smaller than those of the first region, the first semiconductor region and the second semiconductor region,
a lattice constant of the second region being larger than those of the first region, the first semiconductor region and the second semiconductor region,
the thickness of the second semiconductor region being from 1 nm to 15 nm, and
the second region being doped with Mg from 1×10 17 cm −3 to 1×10 19 cm −3 ,
wherein an In composition ratio of the second region is higher than those of the first region, the first semiconductor region and the second semiconductor region.
2. The semiconductor device according to claim 1 ,
wherein the active region emits a light with a predetermined wavelength;
the first semiconductor region is used as a p-type clad region; and
the second semiconductor region is used as a p-type guide region.
3. The semiconductor device according to claim 2 , further comprising:
an n-type guide region disposed on a side of the active region opposite from the p-type guide region, which comprises GaN or In x3 Ga 1-x3 N (0<x3<1).
4. The semiconductor device according to claim 1 ,
wherein the first region contains In and comprises In 1-x-y1 Ga x Al y1 N (0≦x<1, 0<y1<1).
5. The semiconductor device according to claim 1 ,
wherein the second semiconductor region is disposed between the active region and the first region ; and
the second region is disposed between the second semiconductor region and the first region.
6. The semiconductor device according to claim 1 ,
wherein an In composition ratio of the second region from 2% to 10%.
7. The semiconductor device according to claim 1 ,
wherein an In composition ratio of the second region from 3% to 8%.
8. The semiconductor device according to claim 1 ,
wherein an In composition ratio of the first region 2% or less.
9. The semiconductor device according to claim 1 ,
wherein the thickness of the second semiconductor region being from 1 nm to 10 nm.
10. The semiconductor device according to claim 1 , wherein the first region being doped with Mg from 4×10 18 cm −3 to 5×10 19 cm −3 .