Thin-film LED with p and n contacts electrically isolated from the substrate
View Patent ↗A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.
1. A thin-film light emitting diode, comprising:
an insulating substrate;
a conductive adhesive layer and a reflective metal electrode arranged with the insulating substrate, which together form a metallic current spreading layer on the substrate; and
an epitaxial structure on the electrode.
2. The thin-film light emitting diode of claim 1 , wherein the metallic current spreading layer has a thickness greater than about 1 μm.
3. The thin-film light emitting diode of claim 1 , further comprising a metal layer on a bottom surface of the insulating substrate.
4. The thin-film light emitting diode of claim 1 , further comprising a metal contact coupled to the metal electrode.
5. The thin-film light emitting diode of claim 4 , wherein the metal contact is on the metal electrode.
6. The thin-film light emitting diode of claim 1 , wherein the insulating substrate is transparent for the wavelengths between about 300 nm and 700 nm with a transmittance greater than about 50%.
7. The thin-film light emitting diode of claim 1 , wherein the insulating substrate is reflective for the wavelength between about 300 nm and 700 nm with a reflectance greater than about 50%.
8. The thin-film light emitting diode of claim 1 , wherein the epitaxial structure comprises a first epitaxial layer, a second epitaxial layer, and an active region between the first epitaxial layer and the second epitaxial layer.
9. The thin film light emitting diode of claim 8 , wherein the first epitaxial layer has a roughened surface with micro-structures, the micro-structures being between about 100 nm and 500 nm in size.
10. The thin-film light emitting diode of claim 8 , wherein the first epitaxial layer is an n-type GaN-based layer and the second epitaxial layer is a p-type GaN-based layer.
11. The thin-film light emitting diode of claim 8 , further comprising a patterned second electrode on the first epitaxial layer.
12. The thin-film light emitting diode of claim 11 , wherein the epitaxial structure is formed to be a mesa on the electrode and the patterned second electrode is on a top surface of the mesa.
13. The thin-film light emitting diode of claim 1 , wherein the insulating substrate is not an original growth substrate for the epitaxial structure.