Patent Assignment
Reel/Frame 046986/0159
Assignment of Assignor's Interest
Recorded: 2018-08-30
Pages: 12
Assignor
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Executed: 2018-07-20
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129 SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF
Covered Properties
(173)
Gallium Nitride-Based Compound Semiconductor Device
Patent:
6,064,079 →
Application:
09/115,239 →
Semiconductor Light Emitting Device Including a Fluorescent Material
Patent:
6,340,824 →
Application:
09/143,905 →
Nitride Compound Semiconductor Light Emitting Element and Its Manufacturing Method
Patent:
5,990,500 →
Application:
09/261,819 →
Nitride Semiconductor Led with Embossed Lead-Out Surface
Patent:
6,495,862 →
Application:
09/469,340 →
Semiconductor Light Emitting Device Including a Fluorescent Material
Semiconductor Light Emitting Device Including a Fluorescent Material
Light Emitting Device
Semiconductor Light Emitting Device and Its Manufacturing Method
Light Emitting Element, Method of Manufacturing the Same, and Semiconductor Device Having Light Emitting Element
Nitride Based Semiconductor Light-Emitting Device
Light Emitting Element, Method of Manufacturing the Same, and Semiconductor Device Having Light Emitting Element
Semiconductor Device Having a Light Emitting Element
Light Emitting Element, Method of Manufacturing the Same, and Semiconductor Device Having Light Emitting Element
Light Emitting Element, Method of Manufacturing the Same, and Semiconductor Device Having Light Emitting Element
Light Emitting Element, Method of Manufacturing the Same, and Semiconductor Device Having Light Emitting Element
Semiconductor Light-Emitting Device
SEMICONDUCTOR DEVICE ON GaN SUBSTRATE HAVING SURFACE BIDIRECTIONALLY INCLINED TOWARD <1-100> AND <11-20> DIRECTIONS RELATIVE TO {0001} CRYSTAL PLANES
Light-Emitting Device with Fluorescent Layer
Semiconductor Light Emitting Device and Semiconductor Light Emitting Unit
Electrode Structures for Leds with Increased Active Area
Semiconductor Light-Emitting Device and Producing Method for the Same
Lighting Device, Image Pickup Apparatus and Portable Terminal Unit
Image Display Device and Light Emission Device
Silicone Resin Composition
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE ON GaN SUBSTRATE HAVING SURFACE BIDIRECTIONALLY INCLINED TOWARD <1-100> AND <11-20> DIRECTIONS RELATIVE TO {0001} CRYSTAL PLANES
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Light-Emitting Device
Semiconductor Light Emitting Device and Semiconductor Light Emitting Apparatus
Series Connected Segmented Led
Semiconductor Light-Emitting Element
Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light-Emitting Device
Light-Emitting Device With Improved Electrode Structures
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Light Emitting Device and Method for Manufacturing Same
Semiconductor Device and Method for Manufacturing the Same
LED with Improved Injection Efficiency
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Element and Semiconductor Light Emitting Device
Method for Manufacturing Semiconductor Light-Emitting Device and Semiconductor Light Emitting Device
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Led Package, Method for Manufacturing Led Package, and Packing Member for Led Package
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device
Led Package
Semiconductor Light Emitting Device and Method for Manufacturing Same
Led Package and Method for Manufacturing Same
Method for Producing Semiconductor Light-Emitting Element
Light-Emitting Device
Light Emitting Device
Light Emitting Diodes with Smooth Surface for Reflective Electrode
Light Emitting Device
Semiconductor Light Emitting Device
Method of Manufacturing Light-Emitting Device with Fluorescent Layer
Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Optical Semiconductor Device and Method for Manufacturing Same
Semiconductor Light Emitting Device Having a P-Type Semiconductor Layer with a P-Type Impurity
Nitride Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light-Emitting Device
P-Type Doping Layers for Use with Light Emitting Devices
Light Emitting Devices Having Light Coupling Layers
Led Package
Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device, Nitride Semiconductor Layer Growth Substrate, and Nitride Semiconductor Wafer
Semiconductor Light Emitting Device, Nitride Semiconductor Layer, and Method for Forming Nitride Semiconductor Layer
Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Method for manufacturing a light emitting diode with smooth surface for reflective electrode
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Substrate Processing System and Substrate Processing Program
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Light Emitting Module
White Light Emitting Device Containing Three Fluorescent Materials Having Different Peak Wavelengths
Semiconductor Light Emitting Device
Semiconductor Light-Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
LED That Has Bounding Silicon-Doped Regions on Either Side of a Strain Release Layer
Patent:
8,669,585 →
Application:
13/602,145 →
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light-Emitting Device
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Method of Fabricating a Nitrlde Semiconductor Light Emitting Device
Semiconductor Light-Emitting Element
Semiconductor Light Emitting Element and Method for Manufacturing Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Semiconductor Light Emitting Device and Method for Manufacturing Same
Light Emitting Device, Light Emitting Module, and Method for Manufacturing Light Emitting Device
Led with Improved Injection Efficiency
Light Emitting Device, Light Emitting Module, and Method for Manufacturing Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Thin-Film Led with P and N Contacts Electrically Isolated from the Substrate
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device Wherein a Linear Expansion Coefficient of an Intermediate Layer Is Larger Than a Linear Expansion Coefficient of a First Semiconductor Layer and Smaller Than a Linear Expansion Coefficient of a Wavelength Conversion Layer
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light-Emitting Device
Method for Manufacturing Semiconductor Light Emitting Device
Method for Manufacturing Light Emitting Diodes with Smooth Surface for Reflective Electrode
Electrode Structures for Leds with Increased Active Area
Patent:
46,058 →
Application:
14/107,856 →
P-Type Doping Layers for Use with Light Emitting Devices
Light-Emitting Device with Improved Electrode Structures
Semiconductor Light Emitting Device and Method for Manufacturing Same
Light Emitting Devices Having Dislocation Density Maintaining Buffer Layers
Led That Has Bounding Silicon-Doped Regions on Either Side of a Strain Release Layer
P-Type Doping Layers for Use with Light Emitting Devices
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Optical Semiconductor Device and Method for Manufacturing Same
Semiconductor Light Emitting Device Having a P-Type Semiconductor Layer with a P-Type Impurity
Led with Improved Injection Efficiency
Light-Emitting Device with Phosphor Excited by Blue Excitation Light
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light-Emitting Element
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device, Nitride Semiconductor Layer, and Method for Forming Nitride Semiconductor Layer
Series Connected Segmented Led
Patent:
46,155 →
Application:
14/314,987 →
Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device, Nitride Semiconductor Layer Growth Substrate, and Nitride Semiconductor Wafer
Semiconductor Light Emitting Element and Semiconductor Light Emitting Device
Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device Having a Fluorescent Substance Layer
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device with a Film Having a Roughened Surface
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device and Method for Manufacturing Same
Led That Has Bounding Silicon-Doped Regions on Either Side of a Strain Release Layer
Semiconductor Light Emitting Device
Light Emitting Devices Having Light Coupling Layers
Semiconductor Light-Emitting Device with High Reliability and Method of Manufacturing the Same
Semiconductor Device and Manufacturing Method of Semiconductor Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device Having a P-Type Semiconductor Layer with a P-Type Impurity
Semiconductor Light-Emitting Device and Method for Manufacturing Same
Method for Manufacturing Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Semiconductor Light Emitting Device
Light Emitting Device and Method for Manufacturing Same
Semiconductor Light Emitting Device, Nitride Semiconductor Layer, and Method for Forming Nitride Semiconductor Layer
P-Type Doping Layers for Use with Light Emitting Devices
Semiconductor Light-Emitting Device and Method for Producing the Same
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device and Method for Manufacturing Same
Patent:
9,543,484 →
Application:
15/065,146 →
Semiconductor Light Emitting Device and Method for Manufacturing Same
Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.