Semiconductor light emitting device
View Patent ↗A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.
1. A semiconductor light emitting device comprising:
a semiconductor layer including a light emitting layer, a first surface, and a second surface opposite to the first surface;
a first electrode provided in an emitting region on the second surface;
a second electrode provided in a non-emitting region on the second surface;
a first interconnection section provided on the first electrode and electrically connected to the first electrode;
a second interconnection section provided on the second electrode and on the first electrode and electrically connected to the second electrode, wherein a portion of the second interconnection section is opposed to the first electrode;
a varistor film provided in direct contact with the first electrode and the second interconnection section between the first electrode and the portion of the second interconnection section opposed to the first electrode, wherein the varistor film includes an oxide material;
a first insulating film provided on the second surface and a side surface of the semiconductor layer continuing from the first surface, the first insulating film not including the varistor film; and
a second insulating film provided between the first interconnection section and the second interconnection section and having a higher breakdown voltage than the varistor film,
wherein:
the first insulating film covers an end surface of the light emitting layer and has a higher breakdown voltage than the varistor film, and
the varistor film includes at least one of BaTiO 3 , SrTiO 3 , ZnO, BiO, CoO, MnO, SbO, CrO, and NiO.
2. The device according to claim 1 , wherein:
the first interconnection section includes:
a first interconnection layer provided on the first electrode; and
a first metal pillar provided on the first interconnection layer and being thicker than the first interconnection layer, and
the second interconnection section includes:
a second interconnection layer provided on the second electrode and on the varistor film; and
a second metal pillar provided on the second interconnection layer and being thicker than the second interconnection layer.
3. The device according to claim 1 , wherein the semiconductor layer is formed on a substrate, which is then removed.
4. The device according to claim 3 , wherein an unevenness is formed on the first surface of the semiconductor layer from which the substrate has been removed.
5. The device according to claim 3 , further comprising:
a phosphor layer provided on the first surface of the semiconductor layer from which the substrate has been removed.
6. The device according to claim 1 , wherein when a voltage larger than a rated voltage of the semiconductor light emitting device is applied to the varistor film, a current flows through the first interconnection section, the first electrode, the varistor film, and the second interconnection section without passing through the light emitting layer.
7. A semiconductor light emitting device comprising:
a semiconductor layer including a light emitting layer, a first surface, and a second surface opposite to the first surface;
a first electrode provided in an emitting region on the second surface;
a second electrode provided in a non-emitting region on the second surface;
a first interconnection section provided on the first electrode and electrically connected to the first electrode;
a second interconnection section provided on the second electrode and on the first electrode and electrically connected to the second electrode, wherein a portion of the second interconnection section is opposed to the first electrode;
a varistor film provided in direct contact with the first electrode and the second interconnection section between the first electrode and the portion of the second interconnection section opposed to the first electrode, wherein the varistor film includes an oxide material;
a first insulating film provided on the second surface and a side surface of the semiconductor layer continuing from the first surface, the first insulating film having a higher breakdown voltage than the varistor film; and
a second insulating film provided between the first interconnection section and the second interconnection section and having a higher breakdown voltage than the varistor film,
wherein:
the first insulating film covers an end surface of the light emitting layer, and
the varistor film includes at least one of BaTiO 3 , SrTiO 3 , ZnO, BiO, CoO, MnO, SbO, CrO, and NiO.