Semiconductor light emitting device with a film having a roughened surface
View Patent ↗According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side, and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. The film is provided between the second insulating film at the outer periphery and the optical layer. The film has a roughened surface on a side in contact with the optical layer.
1. A semiconductor light emitting device, comprising:
a semiconductor layer including a first side, a second side opposite to the first side, and a light emitting layer;
a first electrode provided on the semiconductor layer on the second side;
a second electrode provided on the semiconductor layer on the second side;
a first insulating film provided on the second side;
a first interconnect portion provided on the first insulating film and connected to the first electrode;
a second interconnect portion provided on the first insulating film and connected to the second electrode;
a second insulating film provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer;
an optical layer provided on the first side, and on the second insulating film at the outer periphery, the optical layer being transmissive with respect to light emitted from the light emitting layer; and
a film provided between the second insulating film at the outer periphery and the optical layer, the film having a roughened surface on a side in contact with the optical layer at the outer periphery.
2. The device according to claim 1 , wherein a planar shape of the first side of the semiconductor layer is formed as a rectangle, and the film includes four parts corresponding to four sides of the rectangle.
3. The device according to claim 1 , wherein the film is provided along an outer periphery of the semiconductor layer.
4. The device according to claim 2 , wherein a total value of widths of two parts of the film provided corresponding to two opposing sides of the four sides is not less than 10 μm.
5. The device according to claim 2 , wherein a width of one part of the film provided corresponding to one side of the four sides is not less than 5 μm.
6. The device according to claim 1 , wherein
the first interconnect portion includes a first interconnect layer provided on the first insulating film and a first metal pillar provided on the first interconnect layer, the first metal pillar being thicker than the first interconnect layer, and
the second interconnect portion includes a second interconnect layer provided on the first insulating film and a second metal pillar provided on the second interconnect layer, the second metal pillar being thicker than the second interconnect layer.
7. The device according to claim 1 , wherein the optical layer is a fluorescent material layer including:
a plurality of fluorescent materials excited by the light emitted from the light emitting layer and emitting a light having a different wavelength from the light emitted from the light emitting layer and
a binder binding the plurality of fluorescent materials and transmissive with respect to the light emitted from the light emitting layer and light emitted from the fluorescent materials.
8. The device according to claim 1 , wherein the first insulating film is also provided on a side face extending from the first side of the semiconductor layer.
9. The device according to claim 8 , wherein the film is provided integrally with same material as the first insulating layer.
10. The device according to claim 8 , further comprising a reflecting film provided via the first insulating film on the side face of the semiconductor layer.
11. The device according to claim 10 , wherein the film is provided between an end portion of the reflecting film and the optical layer.
12. The device according to claim 1 , wherein
the first insulating film and the film are an inorganic film, and
the second insulating film is a resin.
13. The device according to claim 1 , wherein the film is a silicon oxide film.
14. The device according to claim 1 , wherein
a planar shape of the first side of the semiconductor layer is formed as a polygon, and
the film is provided corresponding to each side of the polygon.
15. The device according to claim 1 , further comprising a second film provided between the first side of the semiconductor layer and the optical layer.
16. The device according to claim 15 , wherein the second film is an inorganic insulating film.
17. The device according to claim 1 , wherein the optical layer is provided on the first side of the semiconductor layer without via a substrate.
18. The device according to claim 10 , wherein the second insulating film covers the reflecting film.
19. The device according to claim 6 , wherein the first interconnect layer and the second interconnect layer include an aluminum film.
20. The device according to claim 10 , wherein the reflecting film includes an aluminum film.