Semiconductor light emitting device and method for manufacturing same

1. A semiconductor light emitting device, comprising:

a semiconductor layer including a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface;

a first electrode provided on the second major surface in a region including the light emitting layer;

a second electrode provided on the second major surface;

an insulating layer provided on a side of the second major surface of the semiconductor layer, the insulating layer having a first opening reaching the first electrode and a second opening reaching the second electrode;

a first interconnect layer provided in the first opening and on a face of the insulating layer on a side opposite to the semiconductor layer to connect to the first electrode;

a second interconnect layer provided in the second opening and on a face of the insulating layer on a side opposite to the semiconductor layer to connect to the second electrode;

a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;

a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode;

an insulating film covering a side face of the first metal pillar and a side face of the second metal pillar, the insulating film having a solder wettability poorer than a solder wettability of the first metal pillar and a solder wettability of the second metal pillar; and

a resin layer provided between the insulating film covering the side face of the first metal pillar and the insulating film covering the side face of the second metal pillar, the resin layer surrounding the first metal pillar and the second metal pillar, respectively, with interposing the insulating film therebetween, in a view perpendicular to the first major surface.

2. The device of claim 1 , wherein the first metal pillar and the second metal pillar include copper, and the insulating film is black oxide of the copper.

3. The device of claim 1 , wherein each of a thickness of the first metal pillar and a thickness of the second metal pillar is thicker than a thickness of a stacked body including the semiconductor layer, the first electrode, the second electrode, the insulating layer, the first interconnect layer, and the second interconnect layer.

4. The device of claim 1 , wherein a surface area of the first electrode is greater than a surface area of the second electrode.

5. The device of claim 1 , wherein a contact surface area between the second interconnect layer and the second metal pillar is greater than a contact surface area between the second interconnect layer and the second electrode.

6. The device of claim 1 , wherein a portion of the second interconnect layer extends over the insulating layer to a position to facing the light emitting layer.

7. The device of claim 1 , wherein the insulating film surrounds the first metal pillar and the second metal pillar, respectively, in a view perpendicular to the first major surface.

8. The device of claim 1 , wherein the insulating film covers a side face of a part of the first interconnect layer and the second interconnect layer, and the part is provided outside of first and second openings.

9. The device of claim 1 , wherein the semiconductor layer is formed on a substrate and separated from the substrate.