Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
View Patent ↗A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1−100> direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards <11−20> direction lying in a range of 0.00 degree to 0.06 degree.
1. A semiconductor substrate, comprising:
a GaN substrate having a surface bidirectionally inclined from a {0001} crystal plane by two specified off-angles with respect to two crystal axis directions, respectively, such that an orientation of the surface is defined by a first absolute value of a first off-angle of the surface from the {0001} crystal plane towards <1−100> direction, the first absolute value is equal to or larger than 0.12 degree and equal to or smaller than 0.35 degree and by a second absolute value of a second off-angle of the surface from the {0001} crystal plane towards <11−20> direction, the second absolute value is larger than 0.00 degree and equal to or smaller than 0.06 degree; and
a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the surface of the GaN substrate.
2. The semiconductor substrate of claim 1 , further comprising a doped layer between the single-crystal layer and the GaN substrate, doped with impurity atoms to a concentration of at least about 5×10 17 cm −3 and no greater than about 2×10 19 cm −3 .
3. The semiconductor substrate of claim 2 , wherein the doped layer has a thickness of at least about 0.3 nm and no greater than about 200 nm.
4. The semiconductor substrate of claim 2 , wherein the GaN substrate is an n-type GaN substrate, and the doped layer comprises n-type impurity atoms as the impurity atoms.
5. The semiconductor substrate of claim 1 , wherein the first absolute value lies in a range of 0.12 degree to 0.30 degree.
6. The semiconductor substrate of claim 5 , wherein the first absolute value lies in a range of 0.14 degree to 0.28 degree.
7. A semiconductor light-emitting device, comprising:
a GaN substrate having a surface bidirectionally inclined from a {0001} crystal plane by two specified off-angles with respect to two crystal axis directions, respectively, such that an orientation of the surface is defined by a first absolute value of a first off-angle of the surface from the {0001} crystal plane towards <1−100> direction, the first absolute value is equal to or larger than 0.12 degree and equal to or smaller than 0.35 degree and by a second absolute value of a second off-angle of the surface from the {0001} crystal plane towards <11−20> direction, the second absolute value is larger than 0.00 degree and equal to or smaller than 0.06 degree;
a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the surface of the GaN substrate; and
a light-emitting layer formed of III-V nitride compound semiconductor provided on the single-crystal layer.
8. The semiconductor light-emitting device of claim 7 , wherein the GaN substrate is an n-type GaN substrate, and the single-crystal layer is an n-type III-V nitride compound semiconductor.
9. The semiconductor light-emitting device of claim 8 , further comprising:
an n-type cladding layer formed of III-V nitride compound semiconductor inserted between the single-crystal layer and the light-emitting layer; and
a p-type cladding layer formed of III-V nitride compound semiconductor provided on the light-emitting layer.
10. The semiconductor light-emitting device of claim 9 , further comprising:
an n-type light-guiding layer formed of III-V nitride compound semiconductor inserted between the n-type cladding layer and the light-emitting layer; and
a p-type light-guiding layer formed of III-V nitride compound semiconductor inserted between the p-type cladding layer and the light-emitting layer.
11. The semiconductor light-emitting device of claim 7 , further comprising a doped layer between the single-crystal layer and the GaN substrate, doped with impurity atoms to a concentration of at least about 5×10 17 cm −3 and no greater than about 2×10 19 cm −3 .
12. The semiconductor light-emitting device of claim 11 , wherein the doped layer has a thickness of at least about 0.3 nm and no greater than about 200 nm.
13. The semiconductor light-emitting device of claim 11 , wherein the GaN substrate is an n-type GaN substrate, and the doped layer comprises n-type impurity atoms as the impurity atoms.
14. The semiconductor light-emitting device of claim 7 , wherein the first absolute value lies in a range of 0.12 degree to 0.30 degree.
15. The semiconductor light-emitting device of claim 14 , wherein the first absolute value lies in a range of 0.14 degree to 0.28 degree.
16. A semiconductor device, comprising:
a GaN substrate having a surface bidirectionally inclined from a {0001} crystal plane by two specified off-angles with respect to two crystal axis directions, respectively, such that an orientation of the surface is defined by a first absolute value of a first off-angle of the surface from the {0001} crystal plane towards <1−100> direction, the first absolute value is equal to or larger than 0.12 degree and equal to or smaller than 0.35 degree and by a second absolute value of a second off-angle of the surface from the {0001} crystal plane towards <11−20> direction, the second absolute value is larger than 0.00 degree and equal to or smaller than 0.06 degree; and
a device-structure portion formed of epitaxially grown III-V nitride compound semiconductor provided on the GaN substrate.
17. The semiconductor device of claim 16 , wherein the device-structure portion comprises a light-emitting layer.
18. The semiconductor device of claim 16 , wherein the GaN substrate is an n-type GaN substrate, and the device-structure portion comprises:
an n-type drift layer formed of III-V nitride compound semiconductor provided on the n-type GaN substrate;
a p-type base layer formed of III-V nitride compound semiconductor provided on the n-type drift layer; and
an n-type emitter layer formed of III-V nitride compound semiconductor provided on the p-type base layer.
19. The semiconductor device of claim 18 , wherein the n-type emitter layer has wider bandgap than the p-type base layer.
20. The semiconductor device of claim 16 , wherein the device-structure portion comprises:
a first single-crystal layer formed of III-V nitride compound semiconductor provided on the GaN substrate; and
a second single-crystal layer formed of III-V nitride compound semiconductor provided on the first single-crystal layer and having wider bandgap than the first single-crystal layer.
21. The semiconductor device of claim 16 , further comprising a doped layer between the device-structure portion and the GaN substrate, doped with impurity atoms to a concentration of at least about 5×10 17 cm −3 and no greater than about 2×10 19 cm −3 .
22. The semiconductor device of claim 21 , wherein the doped layer has a thickness of at least about 0.3 nm and no greater than about 200 nm.