Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity
View Patent ↗According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.
1. A semiconductor light emitting device comprising:
a first semiconductor layer of a first conductivity-type;
a second semiconductor layer of a second conductivity-type;
a light emitting part provided between the first semiconductor layer and the second semiconductor layer, the light emitting part including a plurality of barrier layers and a plurality of well layers, the well layers including In; and
an electrode contacting the second semiconductor layer,
the second semiconductor layer including:
a first region contacting the electrode and containing an impurity of the second conductivity-type in a first concentration;
a second region contacting the light emitting part, containing Al and containing an impurity of the second conductivity-type in a second concentration lower than the first concentration;
a third region provided between the first region and the second region, the third region containing an impurity of the second conductivity-type in a third concentration lower than the second concentration; and
a fourth region provided between the second region and the third region, the fourth region having a concentration of an impurity of the second conductivity-type decreasing from the second concentration to the third concentration along a first direction from the first semiconductor layer toward the second semiconductor layer,
wherein the first region is a GaN, the second region is an AlGaN, the third region is a GaN, and the fourth region is a GaN;
wherein the first region is thinner than the third region, and thinner than the fourth region;
wherein the second region is thinner than the third region, and thinner than the fourth region;
wherein the third region has not less than 10 nanometers thickness;
wherein the third concentration is not less than 1×10 19 cm −3 and less than 2.5×10 19 cm −3 ;
wherein the third concentration is constant and has a variation within plus minus 20% of an average value of the third concentration; and
wherein the third concentration has the lowest concentration of the impurity of the second conductivity-type in the second semiconductor layer.
2. The device according to claim 1 , wherein the first concentration is 2×10 20 cm −3 or more.
3. The device according to claim 1 , wherein the second concentration is not less than 2.5×10 19 cm −3 and less than 2×10 20 cm −3 .
4. The device according to claim 1 , wherein
the first concentration is a concentration of Mg in the first region,
the second concentration is a concentration of Mg in the second region,
the third concentration is a concentration of Mg in the third region, and
the concentration of the impurity of the second conductivity-type in the fourth region is a concentration of Mg in the fourth region.
5. The device according to claim 1 , wherein
the third concentration is not less than 0.05 times the second concentration and not more than 0.8 times the second concentration.
6. The device according to claim 1 , wherein
a Mg concentration in the fourth region decreases from a value of 2.5×10 19 cm −3 or more to a values of less than 2.5×10 19 cm −3 along the first direction.
7. The device according to claim 1 , wherein
a thickness of the first region is not less than 1 nanometer and less than 10 nanometers.
8. The device according to claim 1 , wherein
a thickness of the second region is not less than 1 nanometer and less than 10 nanometers.
9. The device according to claim 1 , wherein
a thickness of the third region is not less than 10 nanometers and not more than 80 nanometers.
10. The device according to claim 1 , wherein
a thickness of the fourth region is not less than 10 nanometers and not more than 80 nanometers.
11. The device according to claim 1 , wherein
the electrode includes a metal oxide and is translucent for light emitted from the light emitting part.
12. The device according to claim 1 , wherein
the well layer includes InGaN, and
the barrier layer includes GaN.
13. The device according to claim 1 , wherein
a peak wavelength of light emitted from the light emitting part is not less than 380 nanometers and not more than 550 nanometers.
14. The device according to claim 1 , wherein
a composition ratio of In among Group III elements in the at least one of the well layers is not less than 0.05 and not more than 0.3.
15. The device according to claim 1 , wherein the concentration of the impurity of the second conductivity-type in the fourth region decreases from the second concentration to the third concentration stepwisely.
16. The device according to claim 1 , wherein the fourth region includes a first part and a second part, the second part being provided between the first part and the third region, wherein a rate of the decreasing of the impurity of the second conductivity-type in the first part is larger than a rate of the decreasing of the impurity of the second conductivity-type in the second part.