Semiconductor light emitting device and method for manufacturing the same
View Patent ↗Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.
1. A semiconductor light emitting device comprising:
a substrate;
a metal layer provided on the substrate;
a stack film including a p-type nitride semiconductor layer provided on the metal layer, an active layer provided on the p-type nitride semiconductor layer and including a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer provided on the active layer;
an n-electrode connected to the n-type nitride semiconductor layer;
a p-electrode connected to the p-type nitride semiconductor layer; and
a first film covering an outer region of an upper face of the n-type nitride semiconductor layer, side faces of the stack film, and a region of an upper face of the metal layer other than a region in contact with the p-type nitride semiconductor layer,
wherein the stack film has a tapered shape in cross-section, with a width of a film plane gradually increasing from the n-type nitride semiconductor layer toward the p-type nitride semiconductor layer, and concavities and convexities are provided in a region of the upper face of the n-type nitride semiconductor layer, and
wherein the metal layer comprises:
a first metal layer provided between the substrate and the p-type nitride semiconductor layer; and
a second metal layer provided between the p-type nitride semiconductor layer and the first metal layer and having a width that is smaller than a width of the first metal layer but is larger than a width of the p-type nitride semiconductor layer,
wherein the first film covers a surface of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a surface of the first metal layer other than a region in contact with the second metal layer.
2. The device according to claim 1 , further comprising a contact electrode provided between the p-type nitride semiconductor layer and the metal layer.
3. The device according to claim 2 , wherein the contact electrode contains one of silver and aluminum.
4. The device according to claim 1 , wherein the substrate is one of a silicon substrate, a silicon carbide substrate, a copper substrate and a substrate formed by bonding germanium to a silicon substrate.
5. The device according to claim 1 , wherein the second metal layer contains one of titanium, platinum, gold, and tungsten.
6. The device according to claim 1 , wherein the first film is one of a silicon dioxide film, a silicon nitride film, a zirconium oxide film, a niobium oxide film, and an aluminum oxide film.
7. The device according to claim 1 , wherein the first metal layer is one of an Au—Sn layer, an Au—Si layer, an Ag—Sn—Cu layer, an Sn—Bi layer, an Au layer, an Sn layer, and a Cu layer.