Light emitting device, light emitting module, and method for manufacturing light emitting device

1. A light emitting device, comprising:

a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer provided between the first surface and the second surface;

a p-side electrode provided on the semiconductor layer;

an n-side electrode provided on the semiconductor layer;

a first insulating layer provided on the second surface side, the first insulating layer having a first via communicating with the p-side electrode and a second via communicating with the n-side electrode;

a p-side interconnect layer including a first p-side interconnect layer electrically connected to the p-side electrode through the first via, and a second p-side interconnect layer electrically connected to the first p-side interconnect layer and provided on an interconnect surface provided on a side of the first insulating layer opposite to the semiconductor layer, the second p-side interconnect layer including a portion having a U-shaped cross section;

an n-side interconnect layer including a first n-side interconnect layer electrically connected to the n-side electrode through the second via, and a second n-side interconnect layer electrically connected to the first n-side interconnect layer, separated from the p-side interconnect layer and provided on the interconnect surface, the second n-side interconnect layer including a portion having a U-shaped cross section; and

a second insulating layer provided between the p-side interconnect layer and the n-side interconnect layer,

the portion of the second p-side interconnect layer having a p-side external terminal exposed from the first insulating layer and the second insulating layer at a third surface having a plane orientation different from the first surface and the second surface,

the portion of the second n-side interconnect layer having an n-side external terminal exposed from the first insulating layer and the second insulating layer at the third surface.

2. The device of claim 1 , further comprising a third insulating layer provided inside the U-shaped configuration of the second p-side interconnect layer and inside the U-shaped configuration of the second n-side interconnect layer.

3. The device of claim 2 , wherein the second insulating layer and the third insulating layer are the same resin material.

4. The device of claim 1 , wherein a distance between the p-side external terminal and the n-side external terminal exposed at the third surface is greater than a distance between the first p-side interconnect layer and the first n-side interconnect layer on the interconnect surface.

5. The device of claim 1 , wherein a planar size of the first p-side interconnect layer is larger than a planar size of a portion of the second p-side interconnect layer provided on the first p-side interconnect layer.

6. The device of claim 1 , wherein the first p-side interconnect layer is connected to the p-side electrode through a plurality of the first vias.

7. The device of claim 1 , further comprising a transparent body provided on the first surface, the transparent body being transparent to an emitted light from the light emitting layer.

8. The device of claim 7 , wherein the transparent body includes a transparent resin and a phosphor dispersed in the transparent resin.

9. The device of claim 7 , further comprising a reflective film provided on a side surface of the transparent body, the reflective film being reflective with respect to the emitted light from the light emitting layer.

10. The device of claim 9 , wherein the reflective film is provided also on a side surface of the first insulating layer.

11. The device of claim 1 , wherein the third surface is perpendicular to the first surface.

12. The device of claim 1 , wherein the third surface is not perpendicular to the first surface and is tilted with respect to the first surface.

13. The device of claim 1 , wherein

a planar configuration of the light emitting device is a rectangular configuration as viewed from a direction perpendicular to the first surface, and

the third surface is a surface including a long side of the rectangular configuration.

14. A light emitting module, comprising:

a mounting substrate including a pad in a mounting surface; and

the device of claim 1 mounted to the mounting surface by bonding the p-side external terminal and the n-side external terminal to the pad,

the first surface of the light emitting device being configured to face a lateral direction when the third surface faces downward.

15. A method for manufacturing a light emitting device, comprising:

forming a p-side interconnect layer on an interconnect surface of a stacked body, the stacked body including a plurality of semiconductor layers, a p-side electrode, an n-side electrode, and a first insulating layer, the plurality of semiconductor layers being partitionally separated by a dicing region, each of the plurality of semiconductor layers including a first surface, a second surface opposite to the first surface, and a light emitting layer provided between the first surface and the second surface, the p-side electrode being provided on the semiconductor layer, the n-side electrode being provided on the semiconductor layer, the first insulating layer being provided on the second surface side and having a first via communicating with the p-side electrode, a second via communicating with the n-side electrode, and an interconnect surface formed on a side opposite to the semiconductor layer;

forming an n-side interconnect layer on the interconnect surface apart from the p-side interconnect layer;

forming a second insulating layer between the p-side interconnect layer and the n-side interconnect layer; and

exposing a portion of the p-side interconnect layer and a portion of the n-side interconnect layer at a third surface of a plane orientation different from the first surface and the second surface by cutting a region of the dicing region, the cut region of the dicing region including the second insulating layer, a portion of the p-side interconnect layer, and a portion of the n-side interconnect layer,

the forming of the p-side interconnect layer including:

forming a first p-side interconnect layer inside the first via and on the interconnect surface; and

forming a second p-side interconnect layer in a recessed configuration on the first p-side interconnect layer, a portion of the second p-side interconnect layer having a U-shaped cross section, and exposed from the first insulating layer and the second insulating layer,

the forming of the n-side interconnect layer including:

forming a first n-side interconnect layer inside the second via and on the interconnect surface; and

forming a second n-side interconnect layer in a recessed configuration on the first n-side interconnect layer, a portion of the second n-side interconnect layer having a U-shaped cross section, and exposed from the first insulating layer and the second insulating layer.

16. The method of claim 15 , further comprising filling a third insulating layer inside the second p-side interconnect layer and inside the second n-side interconnect layer.

17. The method of claim 15 , wherein a portion of the p-side interconnect layer and a portion of the n-side interconnect layer are formed to jut onto the dicing region extending in a direction along the third surface.

18. The method of claim 17 , wherein the jutting portions of the p-side interconnect layer and the n-side interconnect layer are formed on both width-direction sides of the dicing region extending in the direction along the third surface.

19. The method of claim 18 , further comprising filling a third insulating layer inside the second p-side interconnect layer and inside the second n-side interconnect layer.

20. A light emitting device, comprising:

a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer provided between the first surface and the second surface;

a p-side electrode provided on the semiconductor layer;

an n-side electrode provided on the semiconductor layer;

a first insulating layer provided on the second surface side, the first insulating layer having a first via communicating with the p-side electrode and a second via communicating with the n-side electrode;

a p-side interconnect layer including a first p-side interconnect layer electrically connected to the p-side electrode through the first via, and a second p-side interconnect layer electrically connected to the first p-side interconnect layer and provided on an interconnect surface provided on a side of the first insulating layer opposite to the semiconductor layer, the second p-side interconnect layer including a portion having an U-shaped cross section;

an n-side interconnect layer including a first n-side interconnect layer electrically connected to the n-side electrode through the second via, and a second n-side interconnect layer electrically connected to the first n-side interconnect layer, separated from the p-side interconnect layer and provided on the interconnect surface, the second n-side interconnect layer including a portion having an U-shaped cross section; and

a second insulating layer provided between the p-side interconnect layer and the n-side interconnect layer.