Semiconductor light emitting device and method for manufacturing same

1. A semiconductor light emitting device, comprising:

a semiconductor layer having a first face, a second face on a side opposite to the first face, and a light emitting layer;

a p-side electrode provided on the semiconductor layer;

an n-side electrode provided on the semiconductor layer;

a p-side interconnection element electrically connected to the p-side electrode;

an n-side interconnection element electrically connected to the n-side electrode and separated from the p-side interconnection element, and

an interconnection layer around the p-side interconnection element and the n-side interconnection element and extending beyond an outer periphery of the semiconductor layer, the p-side interconnection element, and the n-side interconnection element,

wherein the p-side interconnection element includes a p-side interconnection layer, covering at least a part of the p-side electrode, and a p-side metal pillar provided on the p-side interconnection layer; and

the n-side interconnection element includes an n-side interconnection layer, covering at least a part of the n-side electrode, and an n-side metal pillar provided on the n-side interconnection layer, the n-side metal pillar being separated from the p-side metal pillar by a first distance and aligned along a first direction,

the p-side interconnection layer has a plurality of first protrusive parts protruding toward the n-side interconnection layer,

the n-side interconnection layer has a plurality of second protrusive parts between the plurality of first protrusive parts of the p-side interconnection layer, and

the plurality of first protrusive parts and the plurality of second protrusive parts are disposed alternatively along a second direction crossing the first direction between one side of the p-side metal pillar and one side of the n-side metal pillar facing the one side of the p-side metal pillar.

2. The device according to claim 1 , wherein each of the first protrusive parts has a rectangular shape.

3. The device according to claim 1 , wherein each of the first protrusive parts has a triangular shape.

4. The device according to claim 1 , wherein each surface of the first protrusive parts that is facing the n-side interconnection layer includes a curved face within a plane of the p-side interconnection layer.

5. The device according to claim 1 , further comprising:

a first insulating film covering the p-side electrode, the n-side electrode and the semiconductor layer on the second face side, and having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode,

wherein the p-side interconnection layer is provided on the first insulating film and is electrically connected to the p-side electrode through the first opening;

the n-side interconnection layer is provided on the first insulating film and is electrically connected to the n-side electrode through the second opening; and

the n-side interconnection layer includes an overlying portion on the first insulating film, the overlying portion being wider than a portion of the n-side interconnection layer contacting the n-side electrode.

6. The device according to claim 1 , wherein the p-side interconnection element and the n-side interconnection element include at least one metal selected from copper, gold, nickel, and silver.

7. The device according to claim 1 , wherein at least one of the p-side interconnection element and the n-side interconnection element has a portion extending to an outer edge of the semiconductor layer.

8. The device according to claim 5 , further comprising a second insulating film provided between the p-side interconnection element and the n-side interconnection element.

9. The device according to claim 8 , wherein the second insulating film includes epoxy resin.

10. The device according to claim 8 , wherein the second insulating film covers a periphery of the p-side metal pillar and a periphery of the n-side metal pillar.

11. The device according to claim 1 , further comprising a fluorescent layer provided on the first face.

12. The device according to claim 11 , wherein the fluorescent layer includes silicone resin.

13. The device according to claim 1 , wherein

the p-side metal pillar has a quadrilateral cross section in a plane parallel to the p-side interconnection layer,

the n-side metal pillar has a cross section in the plane parallel to the p-side interconnection layer that is not quadrilateral and at least one edge of the cross section of the n-side metal pillar is not perpendicular or parallel to the first direction, and

at least a portion of the n-side metal pillar is between the at least one edge of the cross section of the n-side metal pillar and a gap portion that is between the p-side interconnection layer and the n-side interconnection layer.

14. The device according to claim 1 , wherein

the n-side metal pillar has a quadrilateral cross section in a plane parallel to the n-side interconnection layer,

the p-side metal pillar has a cross section in the plane parallel to the n-side interconnection layer that is not quadrilateral and at least one edge of the cross section of the p-side metal pillar is not perpendicular or parallel to the first direction, and

at least a portion of the p-side metal pillar is between the at least one edge of the cross section of the p-side metal pillar and a gap portion that is between the p-side interconnection layer and the n-side interconnection layer.

15. The device according to claim 1 , wherein a straight line extending in the second direction crosses each of the first and second protrusive parts and does not intersect either the n-side metal pillar or the p-side metal pillar.

16. A semiconductor light emitting device, comprising:

a semiconductor layer having a first face, a second face on a side opposite to the first face, and a light emitting layer, the second face having a quadrilateral shape;

a p-side electrode provided on the semiconductor layer;

an n-side electrode provided on the semiconductor layer;

a p-side interconnection element electrically connected to the p-side electrode; and

an n-side interconnection element electrically connected to the n-side electrode and separated from the p-side interconnection element,

wherein the p-side interconnection element includes a p-side interconnection layer, covering at least part of p-side electrode, and a p-side metal pillar provided on the p-side interconnection layer,

the n-side interconnection element includes an n-side interconnection layer, covering at least part of n-side electrode, and an n-side metal pillar provided on the n-side interconnection layer, the n-side metal pillar being separated from the p-side metal pillar by a first distance and aligned along a first direction,

the p-side interconnection layer has a plurality of first protrusive parts protruding toward the n-side interconnection layer,

the n-side interconnection layer has a plurality of second protrusive parts between the plurality of first protrusive parts of the p-side interconnection layer,

the plurality of first protrusive parts and the plurality of second protrusive parts are disposed alternatively along a second direction crossing the first direction between one side of the p-side metal pillar and one side of the n-side metal pillar facing the one side of the p-side metal pillar, and

at least one of the p-side interconnection layer and the n-side interconnection layer extends beyond an outer periphery of the semiconductor layer such that all four corners of the quadrilateral shape of the second face are covered when viewed along a direction orthogonal to the second face.

17. The device according to claim 16 , wherein the p-side interconnection layer extends to cover two corners of the quadrilateral shape of the second face, and the n-side interconnection layer extends to cover the two other corners of the quadrilateral shape of the second face.

18. The device according to claim 16 , wherein only one of the p-side interconnection layer and the n-side interconnection layer extends to cover all four corners of the quadrilateral shape of the second face.

19. The device according to claim 16 , wherein each surface of the first protrusive parts that is facing the n-side interconnection layer includes a curved face within a plane of the p-side interconnection layer.