Light emitting device and method for manufacturing same

1. A method for manufacturing a light emitting device, comprising:

removing a substrate from a multilayer body with a stacking structure being supported on a support and the support being external surface of the light emitting device on a surface opposite to the substrate,

the stacking structure including:

the substrate;

the multilayer body including a first surface adjacent to the substrate, a second surface opposite to the first surface, and a light emitting layer;

a p-side electrode and an n-side electrode formed on the second surface, one of the p-side electrode and the n-side electrode formed on the light emitting layer, another electrode formed on a portion not including the light emitting layer in the multilayer body;

a dielectric film formed on the p-side electrode and the n-side electrode, the dielectric film having a first opening communicating the p-side electrode and a second opening communicating the n-side electrode;

a p-side metal interconnect layer provided on the dielectric film and connected to the p-side electrode through the first opening; and

an n-side metal interconnect layer provided on the dielectric film apart from the p-side metal interconnect layer and connected to the n-side electrode through the second opening, and

the support including:

a p-side metal pillar provided on the p-side metal interconnect layer;

an n-side metal pillar provided on the n-side metal interconnect layer; and

a filling layer filled in a space between the p-side metal interconnect layer and the n-side metal interconnect layer, and in a space between the p-side metal pillar and the n-side metal pillar.

2. A method for manufacturing a light emitting device, comprising:

forming a dielectric film having a first opening and a second opening on a p-side electrode and an n-side electrode, and a seed metal covering the first and second openings, the p-side electrode and the n-side electrode formed on a second surface of a multilayer body, the multilayer body including a light emitting layer, a first surface adjacent to a first surface side of a substrate and the second surface opposite to the first surface, one of the p-side electrode and the n-side electrode formed on the light emitting layer, and another electrode formed on an non-emitting region of the multilayer body;

forming a metal layer including a p-side metal interconnect layer and a metal layer including an n-side metal interconnect layer on the seed metal, an area of one of the p-side metal interconnect layer and the n-side metal interconnect layer, connected to the other electrode being larger on a surface opposite to the other electrode than on the other electrode side;

separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is exposed between the p-side metal interconnect layer and the n-side metal interconnect layer;

forming a support including the metal layer including the p-side metal interconnect layer, the metal layer including the n-side metal interconnect layer and a resin by filling the resin in a space given by the removing of the seed metal and in a space between the metal layer including the p-side metal interconnect layer and the metal layer including the n-side metal interconnect layer; and

after the forming the support, removing the substrate from the multilayer body supported on the support with the metal layer including the p-side metal interconnect layer, the metal layer including the n-side metal interconnect layer and the resin being external surface of the light emitting device on a surface opposite to the substrate, wherein

the forming of the metal layer including the p-side metal interconnect layer and the metal layer including the n-side metal interconnect layer including forming a p-side metal pillar and an n-side metal pillar on the p-side metal interconnect layer provided on the seed metal and the n-side metal interconnect layer provided on the seed metal, respectively.

3. The method according to claim 2 , wherein the forming a p-side metal interconnect layer and an n-side metal interconnect layer includes forming by electrolytic plating.

4. The method according to claim 2 , wherein the forming a p-side metal pillar and an n-side metal pillar includes forming by electrolytic plating.

5. The method according to claim 2 , further comprising:

forming a lens material on the first surface side of the multilayer body;

further forming a mask material on the lens material; and

then etching the lens material under a condition that the lens material has a lower selective ratio than the mask material.

6. The method according to claim 2 , further comprising:

applying a liquid glass on the first surface side of the multilayer body, and forming a lens by mold press.

7. The method according to claim 2 , wherein,

the forming a multilayer body includes forming a first and second multilayer bodies spaced from and being adjacent to each other,

the forming a p-side metal interconnect layer and an n-side metal interconnect layer includes connectedly forming a first p-side metal interconnect layer provided on the first multilayer body side and a second n-side metal interconnect layer provided on the second multilayer body side, and

the separating the seed metal into a p-side seed metal and an n-side seed metal includes removing the seed metal exposed between a first n-side metal interconnect layer provided on the first multilayer body side and the first p-side metal interconnect layer to separate it into a first n-side seed metal and a first p-side seed metal, and removing the seed metal exposed between a second p-side metal interconnect layer provided on the second multilayer body side and the second n-side metal interconnect layer to separate it into a second p-side seed metal and a second n-side seed metal.

8. The method according to claim 1 , further comprising:

covering the dielectric film, the first opening and the second opening with a continuous metal film before forming the p-side metal interconnect layer and the n-side metal interconnect layer.

9. The method according to claim 1 , wherein the filling layer is formed at a periphery of each of the p-side metal interconnect layer, the n-side metal interconnect layer, the p-side metal pillar and the n-side metal pillar.

10. The method according to claim 1 , wherein the substrate is removed from the multilayer body by laser irradiation.

11. The method according to claim 1 , further comprising:

forming a layer including a phosphor on the first surface side of the multilayer body after the removing the substrate from the multilayer body.

12. The method according to claim 1 , further comprising:

singulating the light emitting device after the removing the substrate from the multilayer body.

13. The method according to claim 1 , wherein,

the one of the p-side electrode and the n-side electrode is the p-side electrode,

the other electrode is the n-side electrode, and

the n-side metal interconnect layer is partially-overlapped with the light emitting layer.

14. The method according to claim 8 , further comprising:

removing the metal film exposed between the p-side metal interconnect layer and the n-side metal interconnect layer after forming the p-side metal interconnect layer and the n-side metal interconnect layer on the metal film, wherein

the filling layer being filled in a portion given by the removing of the metal film.

15. The method according to claim 2 , wherein the forming a multilayer body includes forming multilayer bodies spaced from each other.

16. The method according to claim 2 , wherein the seed metal continuously covers the first and second openings.