Semiconductor light-emitting element

1. A semiconductor light-emitting element comprising:

a first semiconductor layer;

a second semiconductor layer;

a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode connected to the first semiconductor layer; and

a second electrode provided on the second semiconductor layer,

wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy, and

wherein the second electrode has a hole penetrating the second electrode through a thickness direction of the second electrode and having a width of emission wavelength or less of the light-emitting layer.

2. The element according to claim 1 , wherein the hole is formed by migration according to high-temperature heat treatment of silver contained in the second electrode.

3. The element according to claim 1 , wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are formed on a sapphire substrate.

4. The element according to claim 1 , wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are made of Al x Ga 1-x-y In y N (x≧0, y≧0, x+y≦1).

5. The element according to claim 1 , wherein the first semiconductor layer has n-type conductivity and the second semiconductor layer has p-type conductivity.

6. The element according to claim 1 , wherein the second electrode is a silver monolayer film.

7. The element according to claim 1 , further comprising a third electrode being provided on the second semiconductor layer, being in contact with the second electrode, and having a higher contact resistance than a contact resistance of the second electrode with respect to the second semiconductor layer.

8. The element according to claim 1 , further comprising a fluorescent material having an emission center of trivalent Eu and emitting a red light excited by a light from the light-emitting layer, the first semiconductor layer, the second semiconductor layer and the fight-emitting layer being made of semiconductor nitride, the emission wavelength of the light-emitting layer being 370 nm to 400 nm.

9. The element according to claim 1 , further comprising a transparent conductive film being provided between the second semiconductor layer and the second electrode, and transmitting a light from the light-emitting layer.

10. The element according to claim 9 , wherein the transparent conductive film is made of a material having a larger band gap than an energy of photon from the light-emitting layer.

11. The element according to claim 9 , wherein a film thickness of the transparent conductive film is thinner than an inverse number of an absorption coefficient of the transparent conductive film at an emission wavelength of the light-emitting layer.

12. The element according to claim 9 , wherein the transparent conductive film contains at least one of nickel, indium tin oxide, and zinc oxide.

13. The element according to claim 1 , wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are formed on a sapphire substrate via a single crystal aluminum nitride layer.

14. The element according to claim 13 , wherein in the sapphire substrate side of the single crystal aluminum nitride layer, a region having a higher carbon concentration than that of the inside of the single crystal aluminum nitride layer is provided.

15. The element according to claim 1 , further comprising a metal layer provided on the second electrode, and a part of the hole is buried with the metal layer so as to remain a space between the metal layer and the second semiconductor layer in the hole.

16. A semiconductor light-emitting element comprising:

a first semiconductor layer;

a second semiconductor layer;

a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode connected to the first semiconductor layer; and

a second electrode provided on the second semiconductor layer,

wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,

wherein the second electrode has a plurality of non-contact regions contacting the second semiconductor layer and a contact region contacting the semiconductor layer, the non-contacting regions have a width of emission wavelength or less of the light-emitting layer, and

wherein the second electrode is a silver monolayer film.

17. The element according to claim 16 , further comprising a metal layer provided on the second electrode and the metal layer is composed of at least any one of silver and silver alloy.

18. A semiconductor light-emitting element comprising:

a first semiconductor layer;

a second semiconductor layer;

a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode connected to the first semiconductor layer;

a second electrode provided on the second semiconductor layer; and

wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,

wherein the second electrode has a plurality of non-contact regions contacting the second semiconductor layer and a contact region contacting the semiconductor layer, and the non-contacting regions have a width of emission wavelength or less of the light-emitting layer, and

wherein the second electrode has a void provided in an upper face of the second electrode opposite to the second semiconductor layer, and the void has a width of the emission wavelength or less.