Semiconductor light-emitting device and method for manufacturing same
View Patent ↗A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.
1. A semiconductor light-emitting device comprising:
a semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the semiconductor layer including a light-emitting layer, and the semiconductor layer not including a substrate on the first major surface side;
an n-side electrode and a p-side electrode provided on the second major surface of the semiconductor layer;
an insulating film having a first opening and a second opening, the first opening reaching the n-side electrode, the second opening reaching the p-side electrode;
an n-side interconnect connected to the n-side electrode;
a p-side interconnect connected to the p-side electrode;
an n-side pillar connected to the n-side interconnect and having an end portion being available to connect external;
a p-side pillar connected to the p-side interconnect and having an end portion being available to connect external;
a resin provided between the n-side pillar and the p-side pillar, the resin supporting the semiconductor layer together with the n-side pillar and the p-side pillar;
a metal film provided outside of a side surface continued from the first major surface of the semiconductor layer; and
a phosphor layer provided on the first major surface side without a substrate being interposed between the first major surface and the phosphor layer,
a portion of the n-side interconnect being electrically connected to the semiconductor layer at a portion not including the light-emitting layer, and
another portion of the n-side interconnect extending toward the light-emitting layer side opposite to the light-emitting layer.
2. The device of claim 1 , wherein a side surface of the metal film is exposed from the resin.
3. The device of claim 1 , wherein the resin is opaque to light emitted from the light-emitting layer.
4. The device of claim 1 , wherein the resin is opaque to light emitted from the light-emitting layer, and covers the metal film.
5. The device of claim 1 , wherein a part of the n-side interconnect as the metal film extends to the side surface of the semiconductor layer.
6. The device of claim 1 , wherein the n-side interconnect, the p-side interconnect, the n-side pillar and the p-side pillar contain a copper.
7. The device of claim 1 , wherein the n-side pillar, the p-side pillar, and the resin are thicker than the semiconductor layer.
8. The device of claim 1 , wherein the resin covers around the n-side pillar and the p-side pillar.
9. The device of claim 1 , wherein the semiconductor layer had been formed on a substrate, and the substrate is removed from the semiconductor layer.
10. The device of claim 1 , wherein the insulating film is provided on the n-side electrode and the p-side electrode,
the n-side interconnect is provided in the first opening, and
the p-side interconnect is provided in the second opening.
11. The device of claim 1 , wherein
the n-side interconnect and the p-side interconnect include a seed metal provided on the semiconductor layer side, and
the seed metal as a part of the metal film is provided on the side surface of the semiconductor layer.
12. A semiconductor light-emitting device comprising:
a semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the semiconductor layer including a light-emitting layer, and the semiconductor layer not including a substrate on the first major surface side;
an n-side electrode and a p-side electrode provided on the second major surface of the semiconductor layer;
an insulating film having a first opening and a second opening, the first opening reaching the n-side electrode, the second opening reaching the p-side electrode;
an n-side interconnect connected to the n-side electrode;
a p-side interconnect connected to the p-side electrode;
an n-side pillar connected to the n-side interconnect and having an end portion being available to connect external;
a p-side pillar connected to the p-side interconnect and having an end portion being available to connect external;
a resin provided between the n-side pillar and the p-side pillar, a thickness of the resin being thicker than a thickness of the insulating film;
a metal film provided outside of a side surface continued from the first major surface of the semiconductor layer; and
a phosphor layer provided on the first major surface side without a substrate being interposed between the first major surface and the phosphor layer,
a portion of the n-side interconnect being electrically connected to the semiconductor layer at a portion not including the light-emitting layer, and
another portion of the n-side interconnect extending toward the light-emitting layer side opposite to the light-emitting layer.
13. The device of claim 12 , wherein a side surface of the metal film is exposed from the resin.
14. The device of claim 12 , wherein the resin is opaque to light emitted from the light-emitting layer.
15. The device of claim 12 , wherein the resin is opaque to light emitted from the light-emitting layer, and covers the metal film.
16. The device of claim 12 , wherein a part of the n-side interconnect as the metal film extends to the side surface of the semiconductor layer.
17. The device of claim 12 , wherein the n-side interconnect, the p-side interconnect, the n-side pillar and the p-side pillar contain a copper.
18. The device of claim 12 , wherein the n-side pillar, the p-side pillar, and the resin are thicker than the semiconductor layer.
19. The device of claim 12 , wherein the resin covers around the n-side pillar and the p-side pillar.
20. The device of claim 12 , wherein the semiconductor layer had been formed on a substrate, and the substrate is removed from the semiconductor layer.
21. The device of claim 12 , wherein the insulating film is provided on the n-side electrode and the p-side electrode,
the n-side interconnect is provided in the first opening, and
the p-side interconnect is provided in the second opening.
22. The device of claim 12 , wherein
the n-side interconnect and the p-side interconnect include a seed metal provided on the semiconductor layer side, and
the seed metal as a part of the metal film is provided on the side surface of the semiconductor layer.