Semiconductor light emitting device and method for manufacturing same

1. A semiconductor light emitting device, comprising:

a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface;

a p-side electrode contacting the second semiconductor layer;

an n-side electrode contacting the first semiconductor layer;

a p-side pillar provided on the second surface side, the p-side pillar contacting the p-side electrode;

an n-side pillar provided on the second surface side, the n-side pillar contacting the n-side electrode;

a first insulating layer provided on an outer side of a side surface of the semiconductor layer;

an optical layer provided on the first surface of the first semiconductor layer and on the first insulating layer;

a second insulating layer provided on an outer side of a side surface of the first insulating layer and on an outer side of a side surface of the optical layer;

a first layer provided on the second insulating layer and on the optical layer, the first layer contacting an upper surface, a side surface, and a corner of the optical layer, the first layer being light-transmissive and including

a first lower end portion contacting the side surface of the optical layer and the upper surface of the second insulating layer, and

a second lower end portion separated from the optical layer and provided at a height lower than a height of the corner of the optical layer and not less than a height of the first lower end portion, the second lower end portion contacting the upper surface of the second insulating layer;

a p-side interconnect contacting the p-side pillar and extending in a region overlapping the first insulating layer and the second insulating layer; and

an n-side interconnect separated from the p-side interconnect, the n-side interconnect contacting the n-side pillar and extending in a region overlapping the first insulating layer and the second insulating layer.

2. The device according to claim 1 , wherein a distance from the second lower end portion to an upper surface of the first layer is greater than a distance from the upper surface of the optical layer to the upper surface of the first layer.

3. The device according to claim 1 , wherein

the first layer includes a tilted portion tilted with respect to the side surface of the optical layer, and

the tilted portion is provided to be continuous from the first lower end portion to the second lower end portion.

4. The device according to claim 3 , wherein the tilted portion of the first layer has a curved surface.

5. The device according to claim 4 , wherein the curved surface has a recessed configuration.

6. The device according to claim 3 , wherein the first lower end portion protrudes further toward the second insulating layer than does the second lower end portion.

7. The device according to claim 1 , further comprising a second layer provided on the first layer, the second layer being light-transmissive.

8. The device according to claim 1 , wherein the first lower end portion is provided at a height between the height of the corner and a height of an upper surface of the first insulating layer.

9. The device according to claim 1 , wherein the first insulating layer includes a material different from the second insulating layer.

10. The device according to claim 1 , further comprising an insulating film provided on a side surface of the p-side interconnect and a side surface of the n-side interconnect.

11. A semiconductor light emitting device, comprising:

a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface;

a p-side electrode contacting the second semiconductor layer;

an n-side electrode contacting the first semiconductor layer;

a p-side pillar provided on the second surface side, the p-side pillar contacting the p-side electrode;

an n-side pillar provided on the second surface side, the n-side pillar contacting the n-side electrode;

a first insulating layer provided on an outer side of a side surface of the semiconductor layer;

an optical layer provided on the first surface of the semiconductor layer and on the first insulating layer;

a second insulating layer provided on an outer side of a side surface of the first insulating layer and on an outer side of a side surface of the optical layer, the second insulating layer having an upper surface provided at a height more proximal to the semiconductor layer than a height of an upper surface of the optical layer, a portion of the upper surface being tilted with respect to the side surface of the optical layer and approaching the height of the upper surface of the optical layer away from the side surface of the optical layer;

a p-side interconnect contacting the p-side pillar and extending in a region overlapping the first insulating layer and the second insulating layer; and

an n-side interconnect contacting the n-side pillar, extending in a region overlapping the first insulating layer and the second insulating layer, and being separated from the p-side interconnect.

12. The device according to claim 11 , wherein the tilt of the upper surface of the second insulating layer has a curved surface.

13. The device according to claim 12 , wherein the curved surface has a protruding configuration.

14. The device according to claim 11 , further comprising a first layer provided on the second insulating layer and on the optical layer, the first layer being light-transmissive and contacting an upper surface, a side surface, and a corner of the optical layer.

15. The device according to claim 14 , further comprising a second layer provided on the first layer, the second layer being light-transmissive.

16. The device according to claim 11 , wherein the upper surface of the second insulating layer is provided at a height between the height of the upper surface of the optical layer and a height of an upper surface of the first insulating layer.

17. The device according to claim 11 , wherein the optical layer includes a stepped portion provided between the second insulating layer and the upper surface of the optical layer.

18. The device according to claim 11 , wherein the first insulating layer includes a material different from the second insulating layer.

19. The device according to claim 11 , further comprising an insulating film provided on a side surface of the p-side interconnect and a side surface of the n-side interconnect.

20. A method for manufacturing a semiconductor light emitting device, comprising:

forming a semiconductor layer, the semiconductor layer including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

forming a p-side electrode and an n-side electrode contacting the semiconductor layer;

forming a p-side pillar electrically connected to the p-side electrode;

forming an n-side pillar electrically connected to the n-side electrode and separated from the p-side pillar with the first insulating layer interposed between the n-side pillar and the p-side pillar;

forming a first insulating layer on a side surface of the p-side electrode, on a side surface of the n-side electrode, and on a side surface of the semiconductor layer;

forming an optical layer on the semiconductor layer and on the first insulating layer;

bonding a surface of the optical layer to a first layer, and forming a tilted portion in a surface of the first layer, the first layer being light-transmissive, the tilted portion contacting a side surface of the optical layer and being tilted with respect to the side surface of the optical layer;

forming a second insulating layer contacting the tilted portion, the side surface of the optical layer, and a side surface of the first insulating layer;

forming a p-side interconnect as one body overlapping the first insulating layer, the second insulating layer, and the p-side pillar, the p-side interconnect electrically connected to the p-side pillar; and

forming an n-side interconnect as one body overlapping the first insulating layer, the second insulating layer, and the n-side pillar, the n-side interconnect electrically connected to the n-side pillar.