P-type doping layers for use with light emitting devices

1. A method for forming a light emitting diode (LED), comprising:

delta doping a wetting layer including indium (In) with magnesium (Mg),

wherein said wetting layer is formed adjacent to an electron blocking layer,

wherein said electron blocking layer is formed adjacent to an active layer comprising indium (In),

wherein said active layer is formed adjacent to an n-type Group III-V semiconductor layer,

wherein said n-type Group III-V semiconductor layer is formed, and

wherein an Mg intensity has a peak in the wetting layer, and an In intensity has a first peak in the wetting layer and a second peak in the active layer, the first peak of In intensity in the wetting layer being lower than the second peak of In intensity in the active layer.

2. The method of claim 1 , wherein delta doping comprises pulsing a precursor of the Mg into a reaction chamber in which a substrate is disposed, said n-type Group III-V semiconductor layer formed on the substrate.

3. The method of claim 1 , wherein the precursor of Mg is pulsed for a duration between about 0.1 seconds and 15 minutes.

4. The method of claim 1 , wherein the n-type Group III-V semiconductor layer is n-type gallium nitride.

5. A method for forming a light emitting diode (LED), comprising:

forming, in a reaction chamber, a p-type Group III-V semiconductor layer adjacent to an active layer comprising indium (In), the p-type Group III-V semiconductor layer extending into one or more V-pits of the active layer,

wherein the p-type Group III-V semiconductor layer is formed by:

delta doping a wetting layer including indium (In) with magnesium (Mg); and

introducing a source gas of a Group III species and a source gas of a Group V species into the reaction chamber,

wherein an Mg intensity has a peak in the wetting layer, and an In intensity has a first peak in the wetting layer and a second peak in the active layer, the first peak of In intensity in the wetting layer being lower than the second peak of In intensity in the active layer.

6. The method of claim 5 , wherein prior to forming the wetting layer, an electron blocking layer is formed adjacent to the active layer.

7. A method for forming a light emitting diode (LED), comprising:

forming an active layer comprising indium (In) and including one or more V-pits;

forming an electron blocking layer extending into the one or more V-pits of the active layer; and

forming a p-type Group III-V semiconductor layer on the electron blocking layer so as to extend into the one or more V-pits of the active layer, the p-type Group III-V semiconductor layer doped with magnesium (Mg),

wherein an Mg intensity has a peak in an interface between the electron blocking layer and the p-type Group III-V semiconductor layer, and

an In intensity has a first peak in the interface and a second peak in the active layer, the first peak of the In intensity in the interface being lower than the second peak of In intensity in the active layer.

8. The method of claim 7 , further comprising:

forming an n-type Group III-V semiconductor layer; and

forming a pit generation layer on the Group III-V semiconductor layer,

wherein the active layer is formed on the pit generation layer, and the pit generation layer aids in the growth of the one or more V-pits during the formation of the active layer.

9. The method of claim 7 , wherein the active layer is formed so as to have a dislocation density between about 1×10 8 cm −2 and 5×10 9 cm −2 .

10. The method of claim 7 , wherein the p-type Group III-V semiconductor layer has a first portion and a second portion, wherein the first portion is disposed over the active layer, and the second portion is laterally bounded by the one or more V-pits.

11. The method of claim 10 , wherein the second portion is formed so as to have a p-type dopant concentration at least about 1×10 20 cm −3 .

12. The method of claim 10 , wherein the first portion and the second portion are formed so as to have p-type dopant concentrations at least about 1×10 20 cm −3 .

13. The method of claim 7 , wherein the first peak of In intensity in the interface is 1/100th or lower than the second peak of In intensity in the active layer.

14. The method of claim 7 , wherein the peak of Mg intensity in the interface coincides with the first peak of In intensity in the interface.

15. The method of claim 7 , wherein the electron blocking layer comprises aluminum gallium nitride (AlGaN).

16. The method of claim 7 , wherein the electron blocking layer comprises aluminum indium gallium nitride (AlInGaN).

17. The method of claim 7 , wherein the interface is a layer comprising In and N.

18. The method of claim 7 , wherein the n-type Group III-V semiconductor layer is formed on a silicon substrate.