Semiconductor light emitting device and method of manufacturing the same
View Patent ↗According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer, a first surface, and a second surface opposite to the first surface; an n-side electrode; a p-side electrode; a third layer; an insulating member; an n-side metal portion; and a p-side metal portion. The insulating member has a lower surface. A height of the lower surface is higher than a height of the first surface. The insulating member covers a periphery of the third layer, and has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.
1. A semiconductor light emitting device comprising:
a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer provided between the first layer and the second layer, a first surface, and a second surface opposite to the first surface;
an n-side electrode provided on the semiconductor layer;
a p-side electrode provided on the semiconductor layer;
a third layer provided on the first surface and having light transparency;
an insulating member having a lower surface, an elevation of the lower surface being higher than an elevation of the first surface, the insulating member covering a periphery of the third layer, and having light reflectivity on at least a surface of a part of the insulating member adjacent to a side surface of the third layer;
an n-side metal portion being in contact with the n-side electrode, and extending toward a region overlapping the insulating member, the n-side metal portion including an n-side external terminal, the n-side external terminal overlapping the insulating member; and
a p-side metal portion being in contact with the p-side electrode, and extending toward a region overlapping the insulating member, the p-side metal portion includes a p-side external terminal, the p-side external terminal overlapping the insulating member.
2. The device according to claim 1 , further comprising:
an insulating film provided between the insulating member and the n-side metal portion, and between the insulating member and the p-side metal portion, wherein
a Young's modulus of the insulating film is lower than a Young's modulus of the insulating member.
3. The device according to claim 2 , wherein
the insulating film is in contact with each of the insulating member, the n-side metal portion, and the p-side metal portion.
4. The device according to claim 2 , wherein
the insulating film covers the side surface of the third layer and a side surface of the semiconductor layer.
5. The device according to claim 2 , wherein
a corner of the third layer on the semiconductor layer side is covered with the insulating film instead of the insulating member.
6. The device according to claim 1 , further comprising:
a resin layer provided between the n-side external terminal and the p-side external terminal.
7. The device according to claim 6 , wherein
the resin layer is provided on a periphery of the n-side metal portion and a periphery of the p-side metal portion.
8. The device according to claim 7 , wherein
a corner of the third layer on the semiconductor layer side is covered via the insulating film with at least either one of the n-side metal portion and the p-side metal portion.
9. The device according to claim 1 , wherein
an area of a lower surface of the p-side external terminal is larger than an area of a lower surface of the n-side external terminal.
10. The device according to claim 1 , further comprising:
a fourth layer provided on the third layer and having light transparency.
11. The device according to claim 10 , further comprising:
a fifth layer provided on the fourth layer and the insulating member, the fifth layer having light transparency.
12. The device according to claim 1 , further comprising:
a reflecting layer provided between the insulating member and the third layer.
13. A semiconductor light emitting device comprising:
a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer provided between the first layer and the second layer, a first surface, and a second surface opposite to the first surface;
an n-side electrode provided on the semiconductor layer;
a p-side electrode provided on the semiconductor layer;
a third layer provided on the first surface and having light transparency;
an insulating member having a lower surface, an elevation of the lower surface being higher than an elevation of the first surface, the insulating member covering a periphery of the third layer;
an n-side metal portion being in contact with the n-side electrode, and extending toward a region overlapping the insulating member;
a p-side metal portion being in contact with the p-side electrode, and extending toward a region overlapping the insulating member; and
an insulating film provided between the insulating member and the n-side metal portion, and between the insulating member and the p-side metal portion, a Young's modulus of the insulating film being lower than a Young's modulus of the insulating member.
14. The device according to claim 13 , wherein the insulating member has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.
15. A method of manufacturing semiconductor light emitting device, comprising:
embedding a plurality of singulated semiconductor layer chips and a part of a third layer into a support body, the third layer having transparency, the semiconductor layer chips including
a semiconductor layer including a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, and a light emitting layer provided between the first layer and the second layer, and
the third layer formed on the first layer;
forming an insulating member in a part exposed from the support body of the semiconductor layer chips;
separating the support body from the semiconductor layer chips; and
forming an insulating film on a periphery of the semiconductor layer and on a periphery of a part of the third layer exposed from the insulating member after the separating the support body from the semiconductor layer chips.
16. The method according to claim 15 , further comprising:
forming an n-side electrode being in contact with the first layer and overlapping the semiconductor layer before the embedding the semiconductor layer into the support body;
forming a p-side electrode being in contact with the second layer and overlapping the semiconductor layer before the embedding the semiconductor layer into the support body;
forming an n-side metal portion being in contact with the n-side electrode and overlapping each of the semiconductor layer and the insulating member after the separating the support body from semiconductor layer chips; and
forming a p-side metal portion being in contact with the p-side electrode and overlapping each of the semiconductor layer and the insulating member after the separating the support body from semiconductor layer chips.
17. The method according to claim 16 , further comprising:
embedding the n-side electrode and the p-side electrode into the support body.
18. The method according to claim 16 , wherein
the forming the n-side metal portion includes forming an n-side external connection electrode overlapping the insulating member, and
the forming the p-side metal portion includes forming a p-side external connection electrode overlapping the insulating member.