Semiconductor light emitting device

1. A semiconductor light emitting device, comprising:

a semiconductor layer including a first major surface, a second major surface opposite to the first major surface, and a light emitting layer, the semiconductor layer not including a substrate on the first major surface side;

a first electrode provided on a region including the light emitting layer on the second major surface;

a second electrode provided on the second major surface and at least partially interposed in the first electrode in a planar view;

a first insulating layer provided on the second major surface side of the semiconductor layer, and covering a side surface continuing from the first major surface of the semiconductor layer;

a first interconnect layer provided on the first insulating layer on a side opposite to the semiconductor layer, the first interconnect layer provided in a first opening formed in the first insulating layer reaching the first electrode, and the first interconnect layer connected to the first electrode;

a second interconnect layer provided on the first insulating layer on the side opposite to the semiconductor layer, the second interconnect layer provided in a second opening formed in the first insulating layer reaching the second electrode, and the second interconnect layer connected to the second electrode;

a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;

a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode;

a second insulating layer provided between a side face of the first metal pillar and a side face of the second metal pillar, and

a fluorescent layer provided on the first major surface side without a substrate between the first major surface and the fluorescent layer.

2. The device of claim 1 , wherein a surface area of the first electrode is greater than a surface area of the second electrode.

3. The device of claim 1 , wherein the second electrode is further provided to enclose a periphery of the first electrode in the planar view.

4. The device of claim 1 , wherein the second electrode includes a relatively wide portion and a narrow portion, the second opening is provided to reach the wide portion, and the second interconnect layer is connected to the wide portion.

5. The device of claim 1 , wherein number of the first openings is larger than number of the second openings, and a connecting area between the first interconnect layer and the first electrode is greater than a connecting area between the second interconnect layer and the second electrode.

6. The device of claim 1 , wherein a surface area of the first interconnect layer on the first insulating layer is greater than a surface area of the second interconnect layer on the first insulating layer.

7. The device of claim 6 , wherein a plurality of the first metal pillars are provided on the first interconnect layer.

8. The device of claim 1 , wherein the semiconductor layer includes:

a non-light emitting region not having the light emitting layer; and

a light emitting region being provided to protrude more than the non-light emitting region, and the light emitting region having the light emitting layer, the first electrode is provided on a surface of the light emitting region, and the second electrode is provided on a surface of the non-light emitting region.

9. The device of claim 1 , wherein the semiconductor layer has a rectangular shape in the planar view, and the interposed portion of the second electrode is extended in a longitudinal direction.

10. The device of claim 1 , wherein a contact area between the second interconnect layer and the second metal pillar is greater than a contact area between the second interconnect layer and the second electrode.

11. The device of claim 1 , wherein a contact area between the first interconnect layer and the first metal pillar is greater than a contact area between the first interconnect layer and the first electrode.

12. The device of claim 1 , wherein a portion of the second interconnect layer extends to a position facing the light emitting layer on the first insulating layer.

13. The device of claim 1 , wherein a surface area of the second interconnect layer on a side opposite to the second electrode is greater than a surface area of the second interconnect layer on a side connecting the second electrode.

14. The device of claim 1 , wherein a thickness of each of the first metal pillar and the second metal pillar is thicker than a thickness of a stacked body including the semiconductor layer, the first electrode, the second electrode, and the first insulating layer.

15. A semiconductor light emitting device, comprising:

a semiconductor layer including a first major surface, a second major surface opposite to the first major surface, and a light emitting layer, the semiconductor layer not including a substrate on the first major surface side;

a first electrode provided on a region including the light emitting layer on the second major surface;

a second electrode provided on the second major surface, the second electrode enclosing the first electrode in a planar view;

a first insulating layer provided on the second major surface side of the semiconductor layer, and covering a side surface continuing from the first major surface of the semiconductor layer;

a first interconnect layer provided on the first insulating layer on a side opposite to the semiconductor layer, the first interconnect layer provided in a first opening formed in the first insulating layer reaching the first electrode, and the first interconnect layer connected to the first electrode;

a second interconnect layer provided on the first insulating layer on the side opposite to the semiconductor layer, the second interconnect layer provided in a second opening formed in the first insulating layer reaching the second electrode, and the second interconnect layer connected to the second electrode;

a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;

a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode;

a second insulating layer provided between a side face of the first metal pillar and a side face of the second metal pillar, and

a fluorescent layer provided on the first major surface side without a substrate between the first major surface and the fluorescent layer.

16. The device of claim 15 , wherein a surface area of the first electrode is greater than a surface area of the second electrode.

17. The device of claim 15 , wherein number of the first openings is larger than number of the second openings, and a connecting area between the first interconnect layer and the first electrode is greater than a connecting area between the second interconnect layer and the second electrode.

18. The device of claim 15 , wherein the semiconductor layer includes:

a non-light emitting region not having the light emitting layer; and

a light emitting region being provided to protrude more than the non-light emitting region, and the light emitting region having the light emitting layer, the first electrode is provided on a surface of the light emitting region, and the second electrode is provided on a surface of the non-light emitting region.

19. The device of claim 18 , wherein a planar area of the light emitting layer is greater than a planar area of the non-light emitting layer.

20. The device of claim 15 , wherein a surface area of the second interconnect layer on a side opposite to the second electrode is greater than a surface area of the second interconnect layer on a side connecting the second electrode.