Light emitting diodes with smooth surface for reflective electrode
View Patent ↗A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
1. A light emitting diode, comprising:
an epitaxial layer structure;
a first electrode; and
a second electrode,
wherein the first and second electrodes are disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed,
wherein the epitaxial layer structure comprises a first and second epitaxial layers, wherein the first epitaxial layer is between the first electrode and the second epitaxial layer, and the second epitaxial layer is between the second electrode and the first epitaxial layer,
wherein the second electrode is formed on the second epitaxial layer and a surface of the second epitaxial layer where the second electrode is formed has a root-means-square (RMS) roughness less than about 3 nm.
2. The light emitting diode of claim 1 , wherein the second electrode includes a metal selected from a group of consisting of Ag, Pt, Ni, Cr, Ti, Al, Pd, W, Ru, Rh, Mo, and their alloys.
3. The light emitting diode of claim 1 , wherein the first epitaxial layer is an n-type epitaxial layer and the second epitaxial layer is a p-type epitaxial layer.
4. The light emitting diode of claim 3 , wherein the first electrode is an n-type electrode and the second electrode is a p-type electrode.
5. The light emitting diode of claim 1 , wherein the second epitaxial layer is deposited via a MOCVD (Metal-Organic Chemical Vapor Deposition) using a metal-organic compound solution.
6. The light emitting diode of claim 5 , wherein the second epitaxial layer is formed at a temperature no less than 950° C. at a growth rate no more than 150 Å/mim.
7. The light emitting diode of claim 1 , wherein the first and second electrodes are deposited on either sides of the epitaxial layer structure.
8. The light emitting diode of claim 7 , wherein the second electrode is mounted on a substrate.
9. The light emitting diode of claim 8 , wherein the substrate is selected from a group consisting of a metal, a semiconductor material, and a ceramic.
10. The light emitting diode of claim 9 , wherein the metal includes at least one selected from a group consisting of Cu, Mo, W, and Al, wherein the semiconductor material includes at least one selected from a group consisting of Si, GaAs, GaP, InP, and Ge, and wherein the ceramic includes at least one selected from a group consisting of Al 2 O 3 and AlN.
11. A light emitting diode, comprising:
an epitaxial layer structure;
a first electrode; and
a second electrode,
wherein the first and second electrodes are disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed,
wherein the epitaxial layer structure comprises a first and second epitaxial layers, wherein the first epitaxial layer is between the first electrode and the second epitaxial layer, and the second epitaxial layer is between the second electrode and the first epitaxial layer,
wherein the epitaxial layer structure further comprises a transparent ohmic contact layer formed between the second epitaxial layer and the second electrode,
wherein a surface of the transparent ohmic contact layer adjacent to the second electrode has a root-means-square (RMS) roughness less than about 3 nm.
12. A light emitting diode, comprising:
an epitaxial layer structure;
a first electrode; and
a second electrode,
wherein the first and second electrodes are disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed,
wherein the first and second electrodes are deposited on one side of the epitaxial layer structure,
wherein the epitaxial layer structure includes a p-type epitaxial layer and a n-type epitaxial layer, wherein the n-type epitaxial layer is coupled between the first electrode and the p-type epitaxial layer, and the p-type epitaxial layer is between the second electrode and the n-type epitaxial layer, and wherein the first electrode is located on the n-type epitaxial layer.
13. The light emitting diode of claim 12 , wherein the first electrode and the second electrode are mounted on a substrate.
14. The light emitting diode of claim 13 , wherein the substrate has an insulating coating thereon.
15. The light emitting diode of claim 12 , wherein the first electrode and the second electrode are mounted on the substrate via one of a solder weld and metal interconnect.
16. The light emitting diode of claim 12 , wherein the substrate is selected from a group consisting of a metal, a semiconductor material, and a ceramic.
17. The light emitting diode of claim 16 , wherein the metal includes at least one selected from a group consisting of Cu, Mo, W, and Al, wherein the semiconductor material includes at least one selected from a group consisting of Si, GaAs, GaP, InP, and Ge, and wherein the ceramic includes at least one selected from a group consisting of Al 2 O 3 and AlN.
18. The light emitting diode of claim 12 , wherein the n-type epitaxial layer is electrically between the first electrode and the p-type epitaxial layer.
19. A light emitting diode, comprising:
an epitaxial layer structure;
a first electrode; and
a second electrode,
wherein the first and second electrodes are disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed.