Method for manufacturing light emitting diodes with smooth surface for reflective electrode

1. A method for manufacturing a light emitting diode, comprising:

forming an epitaxial layer structure, comprising a first epitaxial layer and a second epitaxial layer; and

depositing a first electrode on the first epitaxial layer of the epitaxial layer structure;

depositing a transparent ohmic contact layer on the second epitaxial layer of the epitaxial structure; and

depositing a second electrode on the transparent ohmic contact layer, wherein the transparent ohmic contact layer has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is deposited.

2. The method of claim 1 , wherein the second electrode is formed by depositing metals including at least one selected from a group consisting of Ag, Pt, Ni, Cr, Ti, Al, Pd, W, Ru, Rh, Mo, and their alloys.

3. The method of claim 1 , wherein the first epitaxial layer is an n-type epitaxial layer and the second epitaxial layer is a p-type epitaxial layer.

4. The method of claim 3 , wherein the first electrode is an n-type electrode and wherein the second electrode is a p-type electrode.

5. The method of claim 3 , further comprising forming an active layer between the n-type epitaxial layer and the p-type epitaxial layer.

6. The method of claim 1 , wherein the second epitaxial layer is formed at a temperature no less than 950° C. at a growth rate no more than 150 Å/min.

7. The method of claim 1 , wherein the first and second electrodes are deposited on opposite sides of the epitaxial layer structure.

8. A method for manufacturing a light emitting diode, comprising:

forming an epitaxial layer structure, comprising a first epitaxial layer and a second epitaxial layer; and

depositing a first electrode on the first epitaxial layer of the epitaxial layer structure;

depositing a transparent ohmic contact layer on the second epitaxial layer of the epitaxial structure; and

depositing a second electrode on the transparent ohmic layer, wherein:

the transparent ohmic contact layer has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is deposited, and

the light emitting diode is a vertical light emitting diode device.

9. The method of claim 7 , wherein the second electrode is mounted on a sub-mount substrate.

10. The method of claim 9 , wherein the substrate is selected from a group consisting of a metal, a semiconductor material, and a ceramic.

11. A method for manufacturing a light emitting diode, comprising:

forming an epitaxial layer structure, comprising a first epitaxial layer and a second epitaxial layer;

depositing a first electrode on the first epitaxial layer of the epitaxial layer structure;

depositing a transparent ohmic contact layer on the second epitaxial layer of the epitaxial layer structure; and

depositing a second electrode on the transparent ohmic contact layer, wherein:

the transparent ohmic contact layer has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is deposited,

the second electrode is mounted on a sub-mount substrate, and

the substrate is selected from a group consisting of Cu, Mo, W, Al, Si, GaAs, GaP, InP, Ge, Al 2 O 3 and AlN.

12. The method of claim 1 , wherein the epitaxial layer structure is formed on a substrate, and the first and second electrodes are deposited on a same side of the substrate.

13. The method of claim 1 , wherein the second epitaxial layer is formed by MOCVD (Metal-Organic Chemical Vapor Deposition).

14. The method of claim 13 , wherein the second epitaxial layer is formed at a temperature no less than 950° C. at a growth rate no more than 150 Å/min.